PART CODE:
SOT23BC848CS1L
SPECIFICATION SHEET
SPECIFICATION SHEET NO.
P0610- SOT23BC848CS1L
DATE
June 10, 2022
REVISION
A0
DESCRIPITION
SMD Plastic-Encapsulate Transistors, SOT-23 series, 3 pads
BC848C Type, NPN,
Collector-Emitter Voltage 30V. Collector Current 100mA Max.
Operating Temp. Range -65°C ~+150°C,
Package in Tape/Reel, 3000pcs/Reel
RoHS/RoHS III compliant
CUSTOMER
CUSTOMER PART NUMBER
CROSS REF. PART NUMBER
ORIGINAL PART NUMBER
MDD BC848C
PART CODE
SOT23BC848CS1L
VENDOR APPROVE
Issued/Checked/Approved
DATE: June 10, 2022
CUSTOMER APPROVE
DATE:
6/13/2022
NextGen Components, Inc.
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PART CODE:
SOT23BC848CS1L
SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES
MAIN FEATURE
• Ideally suited for automatic insertion
APPLICATION
• For Switching and AF Amplifier Applications
RFQ
Request For Quotation
PART CODE GUIDE
SOT23
BC848C
S
1L
1
2
3
4
1) SOT23: SMD Plastic-Encapsulate Transistors, 3 pads SOT-23 series Code
2) BC848C: Type code for BC848C Type
3) S: Package code, Package in Tape/Reel, 3000pcs/Reel
4) 1L: Marking code for “1L” on the case surface, Different Marking for different specification
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SOT23BC848BS1K
SOT23BC848CS1L
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PART CODE:
SOT23BC848CS1L
SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES
DIMENSION (Unit: Inch/mm)
Image for reference
Marking: 1L
Symbol
Value ( mm)
Min.
A
Typ.
1.00
1.40
A1
SOT-23
Max.
0.10
b
0.35
0.50
c
0.10
0.20
D
2.70
E
1.40
1.60
E1
2.40
2.80
e
2.90
3.10
1.90
L
0.10
L1
0.40
Ɵ
0°
0.30
10°
Recommend Pad Layout
1.Base
2.Emitter
3.Collector
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PART CODE:
SOT23BC848CS1L
SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES
MECHANICAL DATA
Case
Terminals
Polarity
Mounting
Position
Weight
per piece
JEDEC SOT-23
molded plastic
body
Solder plated, Solderable per
MIL-STD-750,
Method 2026
Polarity symbol
marking on case
Any
0.00019 Ounce,
0.00591 grams
MAX. RATINGS AT Ta=25 °C
Parameter
SYMBOLS
VALUE
UNITS
LIMIT
Collector-base Voltage
V CBO
30
Volts
Collector-emitter Voltage
V CEO
30
Volts
Emitter-base Voltage
V EBO
6
Volts
Collector Current - Continuous
IC
0.10
A
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
+150
°C
T STG
-65 ~ +150
°C
Storage Temperature Range
4
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SOT23BC848CS1L
PART CODE:
SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES
ELECTRICAL CHARACTERISTICS AT Ta= 25 °C
Parameter
SYMBOLS
VALUE
Min.
Typ.
UNIT
Condition
Max.
Collector-base Breakdown Voltage
V CBO
30
V
Ic= 10 μA, IE=0
Collector-emitter Breakdown
Voltage
V CEO
30
V
I c= 10mA, IB=0
Emitter-base Breakdown Voltage
V EBO
6
V
I E= 10 μA, IC=0
Collector Cut-off Current
I CBO
0.1
µA
VCB=30V, IE=0
Collector Cut-off Current
I CEO
0.1
µA
VCB=30V, I B=0
Emitter Cut-off Current
I EBO
0.1
µA
VEB= 5V, IC=0
DC Current Gain
h FE
420
800
VCE=5V, I C=2 mA
Collector-emitter Saturation
Voltage
V CE(sat)
0.5
V
I C=100mA, I B=5 mA
Base-emitter Saturation Voltage
V BE(sat)
1.1
V
I C=100mA, I B=5 mA
MHz
V CE=5 V, I C=10mA
f= 100 MHz
pF
VCB=10 V, f=1 MHz
Transition Frequency
Collector Output Capacitance
fT
100
C ob
4.5
5
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PART CODE:
SOT23BC848CS1L
SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES
RELIABILITY
Number
Experiment Items
Experiment Method And Conditions
Reference
Documents
1
Solder Resistance Test
Test 260°C± 5°C for 10 ± 2 sec.
Immerse body into solder 1/16” ± 1/32"
MIL-STD-750D
METHOD-2031.2
2
Solderability Test
230°C ±5°C for 5 sec.
MIL-STD-750D
METHOD-2026.1 0
3
Pull Test
1 kg in axial lead direction for 10 sec.
MIL-STD-750D
METHOD-2036.4
4
Bend Test
0.5Kg Weight Applied To Each Lead,
Bending Arcs 90 °C ± 5 °C For 3 Times
MIL-STD-750D
METHOD-2036.4
5
High Temperature Reverse
Bias Test
TA=100°C for 1000 Hours at VR=80%
Rated VR
MIL-STD-750D
METHOD-1038.4
6
Forward Operation Life Test
TA=25°C Rated Average Rectified
Current
MIL-STD-750D
METHOD-1027.3
7
Intermittent Operation Life
Test
On state: 5 min with rated IRMS Power
Off state: 5 min with Cool Forced Air.
On and off for 1000 cycles.
MIL-STD-750D
METHOD-1036.3
8
Pressure Cooker Test
15 PSIG, TA=121°C, 4 hours
MIL-S-19500
APPENOIXC
9
Temperature Cycling Test
-55°C~+125°C; 30 Minutes For Dwelled
Time 5 minutes for transferred time.
Total: 10 cycles.
MIL-STD-750D
METHOD-1051.7
10
Thermal Shock Test
0°C for 5 minutes., 100°C for 5minutes,
Total: 10 cycles
MIL-STD-750D
METHOD-1056.7
11
Forward Surge Test
8.3ms Single Sale Sine-wave One Surge.
MIL-STD-750D
METHOD-4066.4
12
Humidity Test
TA=65°C, RH=98% for 1000 hours.
MIL-STD-750D
METHOD-1021.3
13
High Temperature Storage
life Test
150°C for 1000 Hours
MIL-STD-750D
METHOD-1031.5
6
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PART CODE:
SOT23BC848CS1L
SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES
SUGGESTED REFLOW PROFILE (For Reference Only)
•
Recommended peak temperature is over 245℃, If peak temperature is below 245 ℃, you may adjust the
following parameters; time length of peak temperature (longer), time length of soldering (longer), thickness of
solder paste (thicker)
•
Welding shall not exceed 2 times
•
Remark: lead free solder paste (96.5 sn/3.0 Ag/0.5Cu)
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PART CODE:
SOT23BC848CS1L
SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES
RATINGS AND CHARACTERISTIC CURVES (For Reference Only)
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PART CODE:
SOT23BC848CS1L
SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES
RATINGS AND CHARACTERISTIC CURVES (For Reference Only)
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PART CODE:
SOT23BC848CS1L
SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES
TAPE/REEL (Unit: mm)
All Devices are packed in accordance with EIA standard RS-481-A and specifications.
Item
Symbol
Tolerance
SOT-23
Carrier width
A
0.1
3.15
Carrier Length
B
0.1
2.77
Carrier Depth
C
0.1
1.22
Sprocket hole
d
0.05
1.55
7”Reel outside diameter
D
2.0
178.00
7”Reel inner diameter
D1
Min.
54.4
Feed hole diameter
D2
0.5
13.00
Sprocket hole position
E
0.1
1.75
Punch hole position
F
0.1
3.50
Punch hole pitch
P
0.1
4.00
Sprocket hole pitch
P0
0.1
4.00
Embossment center
P1
0.1
2.00
Overall tape thickness
T
0.1
0.25
Tape width
W
0.3
8.00
Reel width
W1
1.0
19.50
10
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PART CODE:
SOT23BC848CS1L
SMD PLASTIC-ENCCAPULATE TRANSISTORS SOT23 SERIES
PACKAGE
Case Code
SOT-23
Reel Size
7”
Reel Size
178 mm
MPQ/Reel
3000 pcs
Qty. /Box
6000 pcs
G.W/Box
1 LBS
DISCLAIMER
NextGen Component, Inc. reserves the right to make changes to the product(s) and or information contained herein
without notice. No liability is assumed as a result of their use or application. No rights under any patent accompany
the sale of any such product(s) or information
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