G65P06F

G65P06F P-Channel Enhancement Mode Power MOSFET Description The G65P06F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) 100% Avalanche Tested -60V -65A < 18mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-220F Device Package Marking Packaging G65P06F TO-220F G65P06 50pcs/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -60 V ID -65 A IDM -260 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 39 W EAS 225 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Case RthJA 60 ºC/W Maximum Junction-to-Case RthJC 3.2 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note3） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1561) G65P06F Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -60 -- -- V IDSS VDS = -60V, VGS = 0V -- -- -1 uA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2 -2.6 -3.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -20A -- 13 18 mΩ Forward Transconductance gFS VDS = -5V,ID = -20A -- 37 -- S -- 6477 -- -- 337 -- -- 350 -- -- 75 -- -- 16 -- -- 19 -- -- 18 -- -- 20 -- -- 55 -- -- 35 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -25V, f = 1.0MHz VDD = -30V, ID = -20A, VGS = -10V VDD = -30V, ID = -30A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -65 A Body Diode Voltage VSD TJ = 25ºC, ISD = -20A, VGS = 0V -- -- -1.2 V Reverse Recovery Time Trr -- 0.13 -- ns Reverse Recovery Charge Qrr -- 0.77 -- nc IS = - 20A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG 3. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1561) G65P06F Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1561) G65P06F Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 10V 140 8V 6V 120 -ID, Drain Current (A) - ID, Drain Current (A) 160 Figure 2. Transfer Characteristics 100 80 5V 60 40 VGS=4.5V 20 0 0 1 2 3 4 5 -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance - Vgs Gate-Source Voltage (V) RDS(on), On-Resistance (mΩ) 30 25 20 VGS=-10V 15 10 5 0 0 10 20 Figure 4. Gate Charge 30 40 50 -ID-Drain Current（A） Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Capacitance(pF) 7000 -Is, Reverse Drain Current (A) 8000 Ciss 6000 5000 4000 3000 2000 1000 0 Coss Crss 0 10 20 30 40 50 60 -Vds Drain-Source Voltage(V) www.gofordsemi.com -VSD, Source-to-Drain Voltage (V) TEL：0755-29961263 FAX:0755-29961466 (A1561) G65P06F Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1561) G65P06F TO-220F Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1561)