GT035N06T

GT035N06T N-Channel Enhancement Mode Power MOSFET Description The GT035N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l Schematic Diagram VDS 60V ID (at VGS = 10V) 170A RDS(ON) (at VGS = 10V) < 3.5mΩ RDS(ON) (at VGS = 4.5V) < 4.5mΩ 100% Avalanche Tested l RoHS Compliant Marking and pin assignment Application l Power switch l DC/DC converters l Synchronous Rectification TO-220 Device Package Marking Packaging GT035N06T TO-220 GT035N06 50pcs/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 60 V ID 170 A IDM 300 A VGS ±20 V EAS 256 mJ PD 215 W TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Case RthJA 50 ºC/W Maximum Junction-to-Case RthJC 0.58 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Single pulse avalanche energy （note3） Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1485） GT035N06T Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 60 -- -- V IDSS VDS = 60V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.2 1.6 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A -- 2.5 3.5 VGS = 4.5V, ID = 20A -- 3.0 4.5 Forward Transconductance gFS VDS = 5V,ID = 20A -- 60 -- -- 5064 -- -- 1100 -- -- 48 -- -- 70 -- -- 21 -- -- 16 -- -- 16 -- -- 9 -- -- 36 -- -- 11 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 30V, f = 1.0MHz VDD = 30V, ID = 20A, VGS = 10V VDD = 30V, ID = 50A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 125 A Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Reverse Recovery Chrage Qrr 150 -- nC Reverse Recovery Time Trr 30 -- ns IF=20A, di/dt=500A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 20A, VDD = 40V, RG = 25Ω, Starting TJ = 25°C 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1485） GT035N06T Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1485） GT035N06T Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 180 180 10V 8V 6V 5V 4.5V 140 120 100 VGS=3.3V 80 60 40 20 0 VDS=5V 160 ID, Drain Current (A) 160 ID, Drain Current (A) Figure 2. Transfer Characteristics 140 120 100 80 60 25 ºC 40 20 0 1 2 3 4 0 5 0 VDS, Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS, Gate-to-Source Voltage (V) Figure 4. Drain Source On Resistance RDS(on),On-Resistance（mΩ） Vgs Gate-Source Voltage（V） Figure 3. Gate Charge Qg Gate Charge（nC） 5 4.5 4 VGS=4.5V 3.5 3 2.5 VGS=10V 2 1.5 1 0 10 20 30 40 ID-Drain Current（A） Figure 5. Capacitance vs Vds Figure 6. Source-Drain Diode Forward 6000 Capacitance(pF) Is, Reverse Drain Current (A) ciss 5000 4000 coss 3000 2000 1000 0 crss 0 10 20 30 40 50 60 Vds Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 （A1485） GT035N06T Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area VGS=10V ID=20A VGS=4.5V ID=20A ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1485） GT035N06T TO-220 Package Information Dimensions in Millimeters Symbol A A1 A2 b b2 c D D1 D2 E e e1 H1 L L1 ∅ P Q www.gofordsemi.com MIN. 4.37 1.25 2.2 0.7 1.7 0.45 15.1 8.8 5.5 9.7 6.25 12.75 　 3.4 2.6 NOM. 4.57 1.3 2.4 0.8 1.27 0.5 15.6 9.1 　 MAX. 4.7 1.4 2.6 0.95 1.47 0.6 16.1 9.4 　 10 2.54BSC 5.08BSC 6.5 13.5 3.1 3.6 2.8 10.3 TEL：0755-29961263 6.85 13.8 3.4 3.8 3 FAX:0755-29961466 （A1485）