TSM13ND50CI
Taiwan Semiconductor
N-Channel Power MOSFET
500V, 13A, 0.48Ω
FEATURES
KEY PERFORMANCE PARAMETERS
● 100% UIS and Rg tested
PARAMETER
VALUE
UNIT
VDS
500
V
RDS(on) (max)
0.48
Ω
Qg
39
nC
● Advanced planar process
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Power Supply
● AC/DC LED Lighting
ITO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
Limit
UNIT
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current
Pulsed Drain Current
TC = 25°C
(Note 1)
ID
TC = 100°C
(Note 2)
13
8
A
IDM
52
A
PDTOT
57
W
Single Pulse Avalanche Energy
(Note 3)
EAS
608
mJ
Single Pulse Avalanche Current
(Note 3)
IAS
7.8
A
TJ, TSTG
- 55 to +150
°C
SYMBOL
Limit
UNIT
Junction to Case Thermal Resistance
RӨJC
2.2
°C/W
Junction to Ambient Thermal Resistance
RӨJA
62
°C/W
Total Power Dissipation @ TC = 25°C
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
1
Version: A1804
TSM13ND50CI
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
500
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2.5
3
3.8
V
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
IDSS
--
--
1
µA
RDS(on)
--
0.37
0.48
Ω
Qg
--
39
--
Qgs
--
10
--
Qgd
--
12
--
Ciss
--
1877
--
Coss
--
128
--
Crss
--
7
--
Rg
--
1.1
2.2
td(on)
--
11
--
Drain-Source On-State Resistance
VGS = 10V, ID = 3.3A
(Note 4)
Dynamic
(Note 5)
Total Gate Charge
VDS = 400V, ID = 6.5A,
Gate-Source Charge
VGS = 10V
Gate-Drain Charge
Input Capacitance
VDS = 50V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
Switching
nC
pF
Ω
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
VDD = 250V, RG = 5Ω,
tr
--
21
--
Turn-Off Delay Time
ID = 6.5A, VGS = 10V
td(off)
--
32
--
tf
--
22
--
Body-Diode Continuous Forward Current
IS
--
--
13
A
Body-Diode Pulsed Current
ISM
--
--
52
A
VSD
--
--
1.2
V
Turn-Off Fall Time
ns
Source-Drain Diode
Forward Voltage
(Note 4)
IS = 6.5A, VGS = 0V
Reverse Recovery Time
IS = 6.5A
trr
--
282
--
ns
Reverse Recovery Charge
dIF/dt = 100A/μs
Qrr
--
2.9
--
μC
Notes:
1.
Current limited by package
2.
Pulse width limited by the maximum junction temperature
3.
L = 20mH, IAS = 7.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
4.
Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
5.
For DESIGN AID ONLY, not subject to production testing.
6.
Switching time is essentially independent of operating temperature.
o
ORDERING INFORMATION
PART NO.
TSM13ND50CI C0G
PACKAGE
PACKING
ITO-220
50pcs / Tube
2
Version: A1804
TSM13ND50CI
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
15
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
12
ID, Drain Current (A)
ID, Drain Current (A)
15
VGS=5V
9
6
3
12
9
6
25℃
3
150℃
0
0
0
2
4
6
8
0
10
On-Resistance vs. Drain Current
4
6
8
Gate-Source Voltage vs. Gate Charge
0.8
10
VGS, Gate to Source Voltage (V)
RDS(on), Drain-Source On-Resistance (Ω)
2
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
0.6
VGS=10V
0.4
0.2
VDS=400V
ID=6.5A
8
6
4
2
0
0
0
3
6
9
12
0
15
VGS=10V
ID=3.3A
2
1.5
1
0.5
0
-75
-50
-25
0
25
50
75
16
24
32
40
On-Resistance vs. Gate-Source Voltage
RDS(on), Drain-Source On-Resistance (Ω)
On-Resistance vs. Junction Temperature
3
2.5
8
Qg, Gate Charge (nC)
ID, Drain Current (A)
RDS(on), Drain-Source On-Resistance
(Normalized)
-55℃
100 125 150
TJ, Junction Temperature (°C)
3
0.8
0.7
0.6
0.5
0.4
0.3
ID=3.3A
0.2
0.1
0
4
5
6
7
8
9
10
VGS, Gate to Source Voltage (V)
Version: A1804
TSM13ND50CI
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
1.2
BVDSS (Normalized)
Drain-Source Breakdown Voltage
C, Capacitance (pF)
3000
2500
CISS
2000
1500
1000
500
COSS
CRSS
1.1
1
0.9
0.8
0
0.1
ID=250uA
1
10
100
-75
1000
-50
Maximum Safe Operating Area, Junction-to-Case
0
25
50
75
100 125 150
Source-Drain Diode Forward Current vs. Voltage
100
IS, Reverse Drain Current (A)
100
ID, Drain Current (A)
-25
TJ, Junction Temperature (°C)
VDS, Drain to Source Voltage (V)
RDS(ON)
10
1
SINGLE PULSE
RӨJC=2.2°C/W
TC=25°C
10
1
25℃
150℃
0.1
-55℃
0.1
1
10
100
1000
0.2
0.4
0.6
0.8
1
1.2
Normalized Effective Transient
Thermal Impedance, ZӨJC
VDS, Drain to Source Voltage (V)
VSD, Body Diode Forward Voltage (V)
Continuous Drain Current (A)
Normalized Thermal Transient Impedance, Junction-to-Case
10
SINGLE PULSE
RӨJC=2.2°C/W
1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.1
0.01
0.0001
0.001
0.01
0.1
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
1
10
t, Square Wave Pulse Duration (sec)
4
Version: A1804
TSM13ND50CI
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
ITO-220
MARKING DIAGRAM
TSC
13ND50
GYWWF
G
Y
WW
F
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
5
Version: A1804
TSM13ND50CI
Taiwan Semiconductor
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: A1804