TSM4N90CZ C0G

TSM4N90 Taiwan Semiconductor N-Channel Power MOSFET 900V, 4A, 4.0Ω FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) 4Ω (Max.) ● Low gate charge typical @ 25nC (Typ.) ● Improve dV/dt capability PARAMETER VALUE UNIT VDS 900 V RDS(on) (max) 4 Ω Qg 25 nC ● High efficiency switch mode power Supply ● Lighting en de d APPLICATION ITO-220 mm TO-220 Notes: Moisture sensitivity level: level 3. Per J-STD-020 eco ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current TO-220 ITO-220 UNIT VDS 900 V VGS ±30 V TC = 25°C (Note 1) tR Continuous Drain Current SYMBOL 4 4* 2.2 2.2* IDM 16 16 * A PDTOT 123 38.7 W ID TC = 100°C (Note 2) Total Power Dissipation @ TC = 25°C A (Note 3) EAS 474 mJ Single Pulsed Avalanche Current (Note 3) IAS 4 A EAR 12.3 mJ dV/dt 4.5 V TJ, TSTG - 55 to +150 °C SYMBOL TO-220 ITO-220 UNIT No Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy Peak Diode Recovery (Note 7) Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Junction to Case Thermal Resistance RӨJC Junction to Ambient Thermal Resistance RӨJA 1.01 3.23 62.5 °C/W °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. Document Number: DS_P0000109 1 Version: C15 TSM4N90 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL MIN TYP MAX UNIT VGS = 0V, ID = 250µA BVDSS 900 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 -- 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 900V, VGS = 0V IDSS -- -- 10 µA Drain-Source On-State Resistance VGS = 10V, ID = 2.0A RDS(on) -- 3.2 4.0 Ω Forward Transconductance VDS = 30V, ID = 2.0A gfs -- 6 -- S VDS = 720V, ID = 4.0A, Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg -- 25 -- Qgs -- 4.8 -- Qgd -- 10.2 -- en VGS = 10V d Drain-Source Breakdown Voltage de Static CONDITIONS (Note 4) nC VDS = 25V, VGS = 0V, Ciss -- 955 -- Output Capacitance f = 1.0MHz Coss -- 80 -- Gate Resistance F = 1MHz, open drain Rg -- -- 4 td(on) -- 49 -- tr -- 38 -- td(off) -- 146 -- tf -- 50 -- VSD -- -- 1.5 V VGS = 0V, IS = 4A trr -- 487 -- ns dIF/dt = 100A/µs Qrr -- 2.8 -- µC Switching mm Input Capacitance (Note 6) Turn-On Delay Time VDD = 450V, Turn-On Rise Time RGEN = 25Ω, Turn-Off Delay Time Source-Drain Diode e co ID = 4.0A, VGS = 10V, Turn-Off Fall Time IS = 4.0A, VGS = 0V tR Reverse Recovery Time Reverse Recovery Charge ns Current limited by package. No 1. Ω (Note 4) Forward On Voltage Notes: pF 2. Pulse width limited by the maximum junction temperature. 3. L = 56mH, IAS = 4.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C. 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 7. ISD ≤ 4A, dI/dt ≤ 200A/uS, VDD ≤ BVDSS, Starting TJ = 25 C. Document Number: DS_P0000109 o o 2 Version: C15 TSM4N90 Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKAGE PACKING TSM4N90CZ C0G TO-220 50pcs / Tube TSM4N90CI C0G ITO-220 50pcs / Tube No tR e co mm en de d Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000109 3 Version: C15 TSM4N90 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Transfer Characteristics en de d Output Characteristics Gate Charge No tR e co mm On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature Document Number: DS_P0000109 Source-Drain Diode Forward Voltage 4 Version: C15 TSM4N90 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) BVDSS vs. Junction Temperature en de d Drain Current vs. Case Temperature Capacitance vs. Drain-Source Voltage tR e co mm Maximum Safe Operating Area No Maximum Safe Operating Area (ITO-220) Document Number: DS_P0000109 5 Version: C15 TSM4N90 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) en de d Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-220) No tR e co mm Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220) Document Number: DS_P0000109 6 Version: C15 TSM4N90 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) en de d TO-220 MARKING DIAGRAM No tR e co mm Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000109 7 Version: C15 TSM4N90 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) en de d ITO-220 = Halogen Free = Year Code = Week Code (01~52) = Factory Code No tR e co G Y WW F mm MARKING DIAGRAM Document Number: DS_P0000109 8 Version: C15 TSM4N90 No tR e co mm en de d Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000109 9 Version: C15