TSM60NB150CF C0G

TSM60NB150CF Taiwan Semiconductor N-Channel Power MOSFET 600V, 24A, 150mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Super-Junction technology PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 150 mΩ Qg 43 nC ● High performance, small RDS(ON)*Qg figure of merit (FOM) ● High ruggedness performance ● 100% UIS and Rg tested ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● PFC Stage ● Power Supply ● AC/DC LED Lighting ITO-220S ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V 24 A 15 A IDM 72 A Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) ID TC = 100°C (Note 2) Total Power Dissipation @ TC = 25°C PD 62.5 W Single Pulse Avalanche Energy (Note 3) EAS 441 mJ Single Pulse Avalanche Current (Note 3) IAS 4.2 A TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 2 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: A1705 TSM60NB150CF Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 3.2 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA Drain-Source On-State Resistance VGS = 10V, ID = 4.3A RDS(on) -- 124 150 mΩ Qg -- 43 -- Qgs -- 10 -- Qgd -- 17 -- Ciss -- 1765 -- Coss -- 84 -- Crss -- 11 -- Rg -- 3 6 td(on) -- 14 -- tr -- 21 -- td(off) -- 52 -- tf -- 21 -- Body-Diode Continuous Forward Current IS -- -- 24 A Body-Diode Pulsed Current ISM -- -- 72 A VSD -- -- 1.4 V Dynamic (Note 5) Total Gate Charge VDS = 480V, ID = 13A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance VDS = 100V, VGS = 0V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz nC pF Ω (Note 6) Turn-On Delay Time Turn-On Rise Time VDD = 300V, RGEN = 5Ω, Turn-Off Delay Time ID = 6.5A, VGS = 10V Turn-Off Fall Time Source-Drain Diode ns (Note 4) Forward Voltage IS = 13A, VGS = 0V Reverse Recovery Time IS = 6.5A trr -- 241 -- ns Reverse Recovery Charge dIF/dt = 100A/μs Qrr -- 2.4 -- μC Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. 3. L = 50mH, IAS = 4.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o ORDERING INFORMATION PART NO. TSM60NB150CF C0G PACKAGE PACKING ITO-220S 50pcs / Tube 2 Version: A1705 TSM60NB150CF Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 25 25 ID, Drain Current (A) 20 ID, Drain Current (A) VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V 15 10 VGS=5V 5 20 15 10 25℃ 5 150℃ -55℃ 0 0 2 4 6 8 10 0 4 6 8 VGS, Gate to Source Voltage (V) On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge 0.3 0.25 0.2 VGS=10V 0.15 0.1 0.05 0 10 VDS=480V ID=13A 8 6 4 2 0 0 5 10 15 20 25 0 VGS=10V ID=4.3A 2 1.5 1 0.5 0 -75 -50 -25 0 25 50 75 20 30 40 50 On-Resistance vs. Gate-Source Voltage 3 100 TJ, Junction Temperature (°C) 125 150 RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Junction Temperature 2.5 10 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) 2 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Ω) 0 3 0.3 0.25 0.2 0.15 0.1 ID=4.3A 0.05 0 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) Version: A1705 TSM60NB150CF Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage 1.2 BVDSS (Normalized) Drain-Source Breakdown Voltage C, Capacitance (pF) 100000 10000 CISS 1000 100 COSS CRSS 10 ID=1mA 1.1 1 0.9 0.8 1 0 100 200 300 400 500 -75 600 VDS, Drain to Source Voltage (V) -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 100 IS, Reverse Drain Current (A) 100 RDS(ON) ID, Drain Current (A) -50 10 1 SINGLE PULSE RӨJC=2°C/W TC=25°C 10 150℃ 1 25℃ -55℃ 0.1 0.1 1 10 100 0.2 1000 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=2°C/W 1 0.1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.01 0.001 0.00001 0.0001 0.001 0.01 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.1 1 10 t, Square Wave Pulse Duration (sec) 4 Version: A1705 TSM60NB150CF Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) ITO-220S MARKING DIAGRAM TSC 60NB150 GYWWF G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 5 Version: A1705 TSM60NB150CF Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A1705