BTA312G-600CTQ

BTA312G-600CT 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT226A (I2PAK) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required. 2. Features and benefits • • • • • • • • • • 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High junction operating temperature capability (Tj(max) = 150 °C) High voltage capability Less sensitve gate for high noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only Very high immunity to false turn-on by dV/dt Package meets UL94V0 flammability requirement Package is RoHS compliant 3. Applications • • • • Applications subject to high temperature Electronic thermostats (heating and cooling) High power motor controls e.g. washing machines and vacuum cleaners Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current ITSM Tj Min Typ Max Unit - - 600 V - - 12 A non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 state current - - 100 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - - 110 A - - 150 °C junction temperature Static characteristics Conditions full sine wave; Tmb ≤ 118 °C; Fig. 1; Fig. 2; Fig. 3 BTA312G-600CT WeEn Semiconductors 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit IGT gate trigger current VD = 12 V; IT = 100 mA; T2+ G+; Tj = 25 °C; Fig. 7 - - 35 mA VD = 12 V; IT = 100 mA; T2+ G-; Tj = 25 °C; Fig. 7 - - 35 mA VD = 12 V; IT = 100 mA; T2- G-; Tj = 25 °C; Fig. 7 - - 35 mA IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 35 mA VT on-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - - 1.6 V Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 300 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 8 - - A/ms Simplified outline Graphic symbol 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 T2 sym051 1 2 T1 G 3 I2PAK (SOT226A) 6. Ordering information Table 3. Ordering information Type number BTA312G-600CT BTA312G-600CT Product data sheet Package Name Description Version I2PAK plastic single-ended package (I2PAK); TO-262 SOT226A All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 BTA312G-600CT WeEn Semiconductors 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current 2 Conditions 2 Min Max Unit - 600 V full sine wave; Tmb ≤ 118 °C; Fig. 1; Fig. 2; Fig. 3 - 12 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 - 100 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 110 A I t I t for fusing tp = 10 ms; sine-wave pulse - 50 A²s dIT/dt rate of rise of on-state current IG = 70 mA - 100 A/µs IGM peak gate current t = 20 μs - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C over any 20 ms period aac285-001 14 IT(RMS) (A) 12 aac285-002 16 118 °C IT(RMS) (A) 10 14 8 6 12 4 2 0 -50 0 50 100 Tmb (°C) Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values BTA312G-600CT Product data sheet 10 10-2 150 10-1 1 10 surge duration (s) f = 50 Hz; Tmb = 118 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 13 BTA312G-600CT WeEn Semiconductors 3Q Hi-Com Triac aac285-003 20 Ptot (W) 16 12 conduction angle, α (degrees) form factor a 30 60 90 120 180 2.816 1.967 1.570 1.329 1.110 α 110 Tmb(max) (°C) α = 180 118 120 90 α 126 60 30 8 134 4 142 0 0 4 8 12 150 16 IT(RMS) (A) α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values aac285-004 120 ITSM IT ITSM (A) t 1/f 80 Tj(init) = 25 °C max 40 0 1 102 10 number of cycles (n) 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA312G-600CT Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 13 BTA312G-600CT WeEn Semiconductors 3Q Hi-Com Triac aac285-005 104 ITSM IT ITSM (A) t tp Tj(init) = 25 °C max 103 (1) 102 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BTA312G-600CT Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 13 BTA312G-600CT WeEn Semiconductors 3Q Hi-Com Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base half cycle; Fig. 6 - - 2.4 K/W full cycle; Fig. 6 - - 2 K/W thermal resistance from junction to ambient free air in free air - 60 - K/W Rth(j-a) aac285-006 10 Zth(j-mb) (K/W) 1 10-1 P tp 10-2 10-5 10-4 10-3 10-2 10-1 1 tp (s) t 10 Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration BTA312G-600CT Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 13 BTA312G-600CT WeEn Semiconductors 3Q Hi-Com Triac 9. Characteristics Table 6. Characteristics Symbol Parameter VCL dIcom/dt Conditions Min Typ Max Unit clamping voltage - - - rate of change of commutating current - - - VD = 12 V; IT = 100 mA; T2+ G+; Tj = 25 °C; Fig. 7 - - 35 mA VD = 12 V; IT = 100 mA; T2+ G-; Tj = 25 °C; Fig. 7 - - 35 mA VD = 12 V; IT = 100 mA; T2- G-; Tj = 25 °C; Fig. 7 - - 35 mA VD = 12 V; IG = 100 A; T2+ G+; Tj = 25 °C; Fig. 8 - - 50 mA VD = 12 V; IG = 100 A; T2+ G-; Tj = 25 °C; Fig. 8 - - 60 mA VD = 12 V; IG = 100 A; T2- G-; Tj = 25 °C; Fig. 8 - - 50 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 35 mA VT on-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - - 1.6 V VGT gate trigger voltage VD = 12 V; IT = 100 mA; Tj = 25 °C; Fig. 11 - 0.8 1 V VD = 400 V; IT = 100 mA; Tj = 150 °C; Fig. 11 0.2 0.45 - V VD = 600 V; Tj = 25 °C - - 10 µA VD = 600 V; Tj = 150 °C - 0.4 2 mA ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 300 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 8 - - A/ms - - - BTA312G-600CT Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 13 BTA312G-600CT WeEn Semiconductors 3Q Hi-Com Triac aac285-007 3 IGT (3) aac285-008 3 IL IL(25°C) IGT(25°C) (2) 2 2 (1) 1 0 -50 1 0 50 100 Tj (°C) 0 -50 150 (1) T2+ G+ (2) T2+ G(3) T2- G- 0 50 100 Tj (°C) 150 Fig. 8. Normalized latching current as a function of junction temperature Fig. 7. Normalized gate trigger current as a function of junction temperature aac285-009 3 aac285-010 25 IT (A) IH IH(25°C) 20 2 15 10 (1) 1 (2) (3) 5 0 -50 0 50 100 Tj (°C) 150 0 0 1 2 VT (V) 3 Vo = 1.037 V; Rs = 0.034 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 9. Normalized holding current as a function of junction temperature Fig. 10. On-state current as a function of on-state voltage BTA312G-600CT Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 13 BTA312G-600CT WeEn Semiconductors 3Q Hi-Com Triac aac285-011 1.6 VGT VGT(25 °C) 1.2 0.8 0.4 -50 0 50 100 Tj (°C) 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BTA312G-600CT Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 13 BTA312G-600CT WeEn Semiconductors 3Q Hi-Com Triac 10. Package outline Plastic single-ended package (I2PAK); low-profile 3-lead TO-262 SOT226A A A1 E D1 D L1 b1 Q b2 L 1 2 3 c b e e 0 5 Dimensions Unit max nom min mm 10 mm scale A A1 b b1 b2 c D D1 E e 4.7 1.40 0.95 1.40 1.7 0.65 9.4 1.32 10.30 4.3 1.15 0.70 1.14 1.3 0.45 8.6 1.02 9.65 2.54 (REF) L 15.0 12.5 L1 3.0 (REF) Q 2.6 2.2 sot226a_po Outline version SOT226A References IEC JEDEC JEITA European projection Issue date 09-08-17 09-08-25 TO-262 Fig. 12. Package outline I2PAK (SOT226A) BTA312G-600CT Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 13 BTA312G-600CT WeEn Semiconductors 3Q Hi-Com Triac Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 11. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. 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BTA312G-600CT Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 11 / 13 BTA312G-600CT WeEn Semiconductors 3Q Hi-Com Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BTA312G-600CT Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 12 / 13 BTA312G-600CT WeEn Semiconductors 3Q Hi-Com Triac 12. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 3 8. Thermal characteristics............................................... 6 9. Characteristics..............................................................7 10. Package outline........................................................ 10 11. Legal information..................................................... 11 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 19 September 2018 BTA312G-600CT Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 13 / 13