2N7002E,215

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia 2N7002E N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features ■ Logic level threshold compatible ■ Surface-mounted package ■ Very fast switching ■ TrenchMOS technology 1.3 Applications ■ Logic level translator ■ High-speed line driver 1.4 Quick reference data ■ VDS ≤ 60 V ■ RDSon ≤ 3 Ω ■ ID ≤ 385 mA ■ Ptot ≤ 0.83 W 2. Pinning information Table 1: Pinning Pin Description 1 gate (G) 2 source (S) 3 drain (D) Simplified outline Symbol D 3 G 1 2 SOT23 mbb076 S 2N7002E Philips Semiconductors N-channel TrenchMOS FET 3. Ordering information Table 2: Ordering information Type number 2N7002E Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 60 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 60 V VGS gate-source voltage - ±30 V VGSM peak gate-source voltage tp ≤ 50 µs; pulsed; duty cycle = 25 % - ±40 V ID drain current Tsp = 25 °C; VGS = 10 V; see Figure 2 and 3 - 385 mA Tsp = 100 °C; VGS = 10 V; see Figure 2 - 245 mA A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 1.5 Tsp = 25 °C; see Figure 1 Ptot total power dissipation - 0.83 W Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Source-drain diode IS source current Tsp = 25 °C - 385 mA ISM peak source current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 1.5 mA 2N7002E_3 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 03 — 28 April 2006 2 of 12 2N7002E Philips Semiconductors N-channel TrenchMOS FET 03aa17 120 03aa25 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 Tsp (°C) 200 0 P tot P der = ------------------------ × 100 % P ° 50 100 150 Tsp (°C) 200 ID I der = --------------------- × 100 % I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature Fig 2. Normalized continuous drain current as a function of solder point temperature 03ai10 10 ID (A) Limit RDSon = VDS / ID tp = 10 µ s 1 100 µ s 10-1 1 ms DC 10 ms 100 ms -2 10 1 10 VDS (V) 102 Tsp = 25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 2N7002E_3 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 03 — 28 April 2006 3 of 12 2N7002E Philips Semiconductors N-channel TrenchMOS FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter thermal resistance from junction to solder point Rth(j-sp) see Figure 4 [1] thermal resistance from junction to ambient Rth(j-a) [1] Conditions Min Typ Max Unit - - 150 K/W - - 350 K/W Mounted on a printed-circuit board; minimum footprint; vertical in still air 003aab358 103 Zth(j-sp) (K/W) 102 δ = 0.5 0.2 0.1 10 0.05 0.02 single pulse 1 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration 2N7002E_3 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 03 — 28 April 2006 4 of 12 2N7002E Philips Semiconductors N-channel TrenchMOS FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 60 - - V Tj = −55 °C 55 - - V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain leakage current ID = 10 µA; VGS = 0 V ID = 0.25 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C 1 2 2.5 V Tj = 150 °C 0.6 - - V Tj = −55 °C - - 2.75 V VDS = 48 V; VGS = 0 V Tj = 25 °C - - 1 µA Tj = 150 °C - - 10 µA - 10 100 nA IGSS gate leakage current VGS = ±15 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 500 mA; see Figure 6 and 8 Tj = 25 °C - 0.78 3 Ω Tj = 150 °C - 1.45 5.5 Ω VGS = 4.5 V; ID = 75 mA; see Figure 6 and 8 - 1.2 4 Ω ID = 300 mA; VDS = 30 V; VGS = 10 V; see Figure 11 and 12 - 0.69 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance ton turn-on time toff turn-off time - 0.1 - nC - 0.27 - nC VGS = 0 V; VDS = 10 V; f = 1 MHz; see Figure 14 - 31 50 pF - 6.8 30 pF - 3.5 10 pF VDS = 50 V; RL = 250 Ω; VGS = 10 V; RG = 50 Ω; RGS = 50 Ω - 2.5 10 ns - 11 15 ns Source-drain diode VSD source-drain voltage IS = 300 mA; VGS = 0 V; see Figure 13 - 0.85 1.5 V trr reverse recovery time IS = 300 mA; dIS/dt = −100 A/µs; VGS = 0 V - 30 - ns Qr recovered charge - 30 - nC 2N7002E_3 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 03 — 28 April 2006 5 of 12 2N7002E Philips Semiconductors N-channel TrenchMOS FET 03ai12 1 10 ID (A) 03ai14 5000 5 RDSon (mΩ) 0.8 VGS (V) = 4 4000 4.5 0.6 3000 4.5 4 0.4 2000 5 VGS (V) = 3.5 0.2 1000 0 10 0 0 0.5 1 1.5 VDS (V) 2 0 Tj = 25 °C 0.2 0.4 0.6 0.8 1 ID (A) Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 03ai16 1 Fig 6. Drain-source on-state resistance as a function of drain current; typical values 03aa28 2.4 ID (A) a 0.8 1.8 0.6 1.2 0.4 Tj = 150 °C 25 °C 0.6 0.2 0 0 2 4 VGS (V) 6 Tj = 25 °C and 150 °C; VDS > ID × RDSon 0 -60 60 120 Tj (°C) 180 R DSon a = ----------------------------R DSon ( 25 °C ) Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature 2N7002E_3 Product data sheet 0 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 03 — 28 April 2006 6 of 12 2N7002E Philips Semiconductors N-channel TrenchMOS FET 003aab101 3 VGS(th) (V) ID (A) max typ 2 10-4 min 1 0 -60 003aab100 10-3 min typ max 10-5 10-6 0 60 120 Tj (°C) 180 0 1 2 VGS (V) 3 Tj = 25 °C; VDS = 5 V ID = 0.25 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aab359 10 VGS ID = 0.3 A Tj = 25 °C (V) 8 VDS = 30 V VDS ID 6 VGS(pl) 4 VGS(th) VGS 2 QGS1 QGS2 QGS 0 0 0.2 0.4 0.6 QG (nC) 0.8 QGD QG(tot) 003aaa508 ID = 0.3 A; VDS = 30 V Fig 11. Gate-source voltage as a function of gate charge; typical values Fig 12. Gate charge waveform definitions 2N7002E_3 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 03 — 28 April 2006 7 of 12 2N7002E Philips Semiconductors N-channel TrenchMOS FET 03ai17 1 03ai18 102 IS (A) 0.8 C (pF) Ciss 0.6 10 0.4 Coss 0.2 0 0.2 0.4 Crss Tj = 25 °C 150 °C 0.6 0.8 VSD (V) 1 Tj = 25 °C and 150 °C; VGS = 0 V 1 10-1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 13. Source current as a function of source-drain voltage; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 2N7002E_3 Product data sheet 1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 03 — 28 April 2006 8 of 12 2N7002E Philips Semiconductors N-channel TrenchMOS FET 7. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC SOT23 JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB Fig 15. Package outline SOT23 2N7002E_3 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 03 — 28 April 2006 9 of 12 2N7002E Philips Semiconductors N-channel TrenchMOS FET 8. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes 2N7002E_3 20060428 Product data sheet - - 2N7002E_2 Modifications: • • • • • • • • • Table 5 “Characteristics”: VGS(th) ID condition modified Table 5 “Characteristics”: VGS(th) maximum limits modified Table 5 “Characteristics”: RDSon typical values modified Table 5 “Characteristics”: gfs removed Table 5 “Characteristics”: Addition of QG(tot), QGS and QGD Table 5 “Characteristics”: Ciss, Coss and Crss values modified Table 5 “Characteristics”: ton and toff typical values modified Figure 3, 4, 5, 6, 7, 9, 10, 13 and 14: modified Figure 11: added 2N7002E_2 20050426 Product data sheet - 9397 750 14944 2N7002E-01 2N7002E-01 20020211 Product data - 9397 750 09095 - 2N7002E_3 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 03 — 28 April 2006 10 of 12 2N7002E Philips Semiconductors N-channel TrenchMOS FET 9. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 2N7002E_3 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 03 — 28 April 2006 11 of 12 2N7002E Philips Semiconductors N-channel TrenchMOS FET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 28 April 2006 Document number: 2N7002E_3 Published in The Netherlands