MMBT3904T
Taiwan Semiconductor
60V, NPN General-Purpose Transistor
FEATURES
●
●
●
●
●
●
KEY PERFORMANCE PARAMETERS
Complementary PNP Type: MMBT3906T
Epitaxial Planar Type
VCEO > 40V
IC = 200mA Collector Current
RoHS Compliant
Halogen-free according to IEC 61249-2-21
VCE(sat)
PARAMETER
VALUE
UNIT
VCBO
60
V
VCEO
40
V
IC
200
mA
0.2
V
IC = 10mA, IB = 1mA
APPLICATION
● Consumer electronics
● Low frequency amplifier
● Driver
SOT-523
Notes: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
200
mA
Power Dissipation
PD
150
mW
Junction temperature
TJ
-55 to +150
°C
Storage temperature
TSTG
-55 to +150
°C
SYMBOL
TYP
UNIT
RӨJA
397
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
o
C/W
Thermal Performance Note: Units mounted on PCB (10mm x 5mm Cu pad test board)
1
Version: A2208
MMBT3904T
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
IC = 1.0mA, IB = 0A
V(BR)CEO
40
-
-
V
IC = 10μA, IE = 0A
V(BR)CBO
60
-
-
V
IE = 10μA, IC = 0A
V(BR)EBO
6
-
-
V
VCB = 30V, IE = 0A
ICBO
-
-
50
nA
VEB = 5V, IE = 0A
IEBO
-
-
50
nA
-
-
0.2
V
-
-
0.3
V
0.65
-
0.85
V
-
-
0.95
V
(1)
Static
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Emitter Cut-Off Current
Collector Cut-Off Current
Collector-Emitter Saturation IC = 10mA, IB = 1.0mA
VCE(sat)
Voltage
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation
IC = 10mA, IB = 1.0mA
Voltage
IC = 50mA, IB = 5.0mA
Output Capacitance
VCB = 5.0V, IE = 0, f = 1MHz
Cobo
-
-
4
pF
Input Capacitance
VEB = 0.5V, IC = 0, f = 1MHz
Cibo
-
-
8
pF
IC = 0.1mA, VCE = 1.0V
40
-
-
IC = 1.0mA, VCE = 1.0V
70
-
-
100
-
300
IC = 50mA, VCE = 1.0V
60
-
-
IC = 100mA, VCE = 1.0V
30
-
-
fT
300
-
-
MHz
VCC = 3.0V, VBE(OFF) = -0.5V
IC = 10mA, IB1 = 1.0mA
td
-
-
35
ns
tr
-
-
35
ns
VCC = 3.0V,IC = 10mA
IB1 = IB2 = 1.0mA
ts
-
-
200
ns
tf
-
-
50
ns
DC Current Gain
Dynamic
VBE(sat)
IC = 10mA, VCE = 1.0V
hFE
-
(2)
Transition Frequency
Delay Time
Rise Time
Storage Time
Fail Tome
IC = 10mA, VCE = 20V,
f = 100MHz
Notes:
1. Pulse test: ≤380µs, duty cycle ≤2%
2. For DESIGN AID ONLY, not subject to production testing
ORDERING INFORMATION
ORDERING CODE
PACKAGE
PACKING
MMBT3904T RSG
SOT-523
3,000 / 7’’ Tape & Reel
2
Version: A2208
MMBT3904T
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.2 Base-Emitter Saturation Voltage vs. Collector
Current
Fig.1 Collector-Emitter Saturation Voltage vs.
Collector Current
1
VBE(SAT), BASE-EMITTER (V)
SATURATION VOLTAGE
VCE(SAT), COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
0.2
0.1
IC/IB =10
1
10
0.6
0.4
0.2
IC/IB =10
0
0
0.1
0.8
0.1
100
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Fig.3 DC Current Gain vs. Collector Current
Fig.4 Input and Output Capacitance vs. Bias
Voltage
12
1000
VCE=1V
TJ=125°C
CAPACITANCE (pF)
100
f=1MHz
10
TJ=25°C
TJ=-55°C
8
Cibo
6
4
Cobo
2
0
10
0.1
1
10
100
0.1
1000
1
IC, COLLECTOR CURRENT (mA)
10
100
BIAS VOLTAGE (V)
Fig.5 Collector Saturation Region
1
VCE, COLLECTOR EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
1
0.8
0.6
IC=1mA
IC=10mA
IC=100mA
IC=30mA
0.4
0.2
0
1
10
100
1000
10000
IB, BASE CURRENT (mA)
3
Version: A2208
MMBT3904T
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
SOT-523
1.60±0.10
A
0.20
0.10
0.30±0.05
3
B
0.80±0.10
1.60±0.20
1
0.50
2
0.20±0.05 2X
0.10
C A B
DETAIL A
3X
0.10 C
3X
0.90
0.70
0.80
0.70
C
8°
0°
0.45
0.20
(0.40)
0.60
0.50
C
0.10
0.00
SEATING
PLANE
DETAIL A
(ROTATED -90°)
1.30
(SCALE 2:1)
0.60
0.40
0.50
3
SUGGESTED PAD LAYOUT
P/N
NOTES: UNLESS OTHERWISE SPECIFIED
1
1. ALL DIMENSIONS ARE IN MILLIMETERS.
2. DIMENSIONING AND TOLERANCING
PER ASME Y14.5M-1994.
2
MARKING DIAGRAM
3. PACKAGE OUTLINE REFERENCE:
EIAJ ED-7500A, SC-75.
P/N
= MARKING CODE
4 MOLDED PLASTIC BODY DIMENSIONS DO
NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS.
5. DWG NO. REF: HQ2SD07-SOT523-029 REV A.
4
Version: A2208
MMBT3904T
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf
assumes no responsibility or liability for any errors or inaccuracies.
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for application assistance or the design of Purchasers’ products.
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relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5
Version: A2208