G7K2N20HE

G7K2N20HE N-Channel Enhancement Mode Power MOSFET Description The G7K2N20HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested < < 200V 2A 0.70Ω 0.72Ω Schematic diagram l RoHS Compliant l ESD (HBM)>4KV Application l Power switch l DC/DC converters SOT-223 Ordering Information Device Package Marking Packaging G7K2N20HE SOT-223 G7K2N20 2500psc/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 200 V ID 2 A IDM 8 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.8 W TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJA 70 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1691-V1.1) G7K2N20HE Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 200 -- -- V IDSS VDS = 200V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±30 uA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.8 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 1A -- 0.55 0.70 VGS = 4.5V, ID = 1A -- 0.57 0.72 Forward Transconductance gFS VGS = 5V, ID = 1A -- 0.94 -- -- 568 -- -- 13 -- -- 10 -- -- 10.8 -- -- 1.7 -- -- 3.1 -- -- 10.7 -- -- 7.3 -- -- 18.2 -- -- 11.9 -- Static Parameters Ω S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 100V, f = 1.0MHz VDD = 100V, ID = 1A, VGS = 10V VDD = 100V, ID = 1A, RG = 10Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 2 A Body Diode Voltage VSD TJ = 25ºC, ISD = 1A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 357 -- nC Reverse Recovery Time Trr IF = 1A, VGS = 0V di/dt=100A/us -- 125 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1691-V1.1) G7K2N20HE Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1691-V1.1) G7K2N20HE Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 3 10V 3.3V 4.5V 2.5 VDS= 5V 3V ID, Drain Current (A) 3 ID, Drain Current (A) Figure 2. Transfer Characteristics 2 1.5 2.7V 1 VGS= 2.5V 0.5 0 0 1 2 2.5 2 1.5 25℃ 1 0.5 3 0 4 0 VDS, Drain-to-Source Voltage (V) 1 3 4 5 6 VGS, Gate-to-Source Voltage (V) Figure 4. Gate Charge Vgs Gate-Source Voltage（V） Figure 3. Drain Source On Resistance RDS(on),On-Resistance（mΩ） 2 VGS= 4.5V VGS= 10V 10 6 4 2 0 ID-Drain Current（A） VDD = 100V ID = 1A 8 0 2 4 6 8 10 12 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) 1200 Capacitance(pF) 1000 800 Ciss 600 400 200 Coss 0 Crss 0 10 20 30 40 50 60 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1691-V1.1) G7K2N20HE Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance VGS = 10V, ID = 1A TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 70°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1691-V1.1) G7K2N20HE SOT-223 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1691-V1.1)