G1K1P06HH

G1K1P06HH P-Channel Enhancement Mode Power MOSFET Description The G1K1P06HH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) 100% Avalanche Tested -60V -4.5A < 110mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters SOT-223 Ordering Information Device Package Marking Packaging G1K1P06HH SOT-223 G1K1P06 4000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -60 V ID -4.5 A IDM -18 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 3.1 W TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 40.3 ºC/W Maximum Junction-to-Lead RthJL 18 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1729-V1.2） G1K1P06HH Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -60 -- -- V IDSS VDS = -60V, VGS = 0V -- -- -10 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2 -2.7 -4 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -4A -- 90 110 mΩ Forward Transconductance gFS VDS = -5V,ID = -4A -- 7 -- S -- 981 -- -- 45 -- -- 40 -- -- 11 -- -- 2.4 -- -- 2.7 -- -- 12 -- -- 10 -- -- 19 -- -- 6 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -30V, f = 1.0MHz VDD = -30V, ID = -4A, VGS = -10V VDD = -30V, ID = -4A, RG = 6Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -4.5 A Body Diode Voltage VSD TJ = 25ºC, ISD = -4A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 40 -- nC Reverse Recovery Time Trr -- 25 -- ns IF = -4A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1729-V1.2） G1K1P06HH Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1729-V1.2） G1K1P06HH Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 12 -10V 10 VDS= -5V -5V -5.5V -ID, Drain Current (A) -ID, Drain Current (A) 12 Figure 2. Transfer Characteristics 8 -4.5V 6 4 -4V 2 0 1 2 8 6 25℃ 4 2 VGS= -3.7V 0 10 3 0 4 0 -VDS, Drain-to-Source Voltage (V) 2 -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 140 120 100 VGS= -10V 40 20 0 10 2 4 6 8 -ID-Drain Current (A) VDD = -30V, ID = -4A 8 6 4 2 0 0 8 Figure 4. Gate Charge 160 60 6 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 80 4 0 2 4 6 8 10 12 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward -Is, Reverse Drain Current (A) 1400 Capacitance(pF) 1200 Ciss 1000 800 600 400 200 0 Coss Crss 0 10 20 30 40 50 60 -VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466（A1729-V1.2） G1K1P06HH Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area VGS = -10V, ID = -4A -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1729-V1.2） G1K1P06HH SOT-223 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1729-V1.2）