G800N06H

G800N06H

  • 厂商:

    GOFORD(谷峰)

  • 封装:

    SOT-223

  • 描述:

    表面贴装型 N 通道 60 V 3A(Tc) 1.2W(Tc) SOT-223

  • 数据手册
  • 价格&库存
G800N06H 数据手册
G800N06H N-Channel Enhancement Mode Power MOSFET Description The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested < < 60V 3A 80mΩ 85mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters SOT-223 Ordering Information Device Package Marking Packaging G800N06H SOT-223 G800N06 2500psc/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 60 V ID 3 A IDM 12 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.2 W TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJA 104 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466(A1678-V1.0) G800N06H Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 60 -- -- V IDSS VDS = 60V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.7 0.9 1.2 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 3A -- 65 80 VGS = 4.5V, ID = 3A -- 70 85 Forward Transconductance gFS VGS = 5V, ID = 3A -- 9 -- -- 457 -- -- 25 -- -- 22 -- -- 6 -- -- 1 -- -- 1.3 -- -- 15 -- -- 6 -- -- 15 -- -- 10 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 30V, f = 1.0MHz VDD = 30V, ID = 3A, VGS = 4.5V VDD = 30V, ID = 3A, RG = 1Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 3 A Body Diode Voltage VSD TJ = 25ºC, ISD = 3A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 38 -- nC Reverse Recovery Time Trr IF = 3A, VGS = 0V di/dt=100A/us -- 36 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466(A1678-V1.0) G800N06H Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466(A1678-V1.0) G800N06H Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 16 4.5V ID, Drain Current (A) 2.4V 12 10 2.1V 8 6 1.8V 4 VGS= 1.5V 2 0 0 1 2 3 RDS(on),On-Resistance(mΩ) 12 10 8 25℃ 6 4 0 4 0 1 2 3 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance Figure 4. Gate Charge 100 90 80 70 VGS= 4.5V 60 VGS= 10V 50 40 30 20 VDS= 5V 14 2 Vgs Gate-Source Voltage(V) ID, Drain Current (A) 16 10V 14 Figure 2. Transfer Characteristics 0 1 2 3 4 5 5 ID-Drain Current(A) VDD = 30V, ID = 3A 4 3 2 1 0 6 4 0 2 4 6 8 Qg Gate Charge(nC) Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) 900 Capacitance(pF) 800 700 600 Ciss 500 400 300 200 100 0 Coss Crss 0 10 20 30 40 50 60 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL:0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1678-V1.0) G800N06H Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V, ID = 3A VGS = 4.5V, ID = 3A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 104°C/W Pulse Width (s) www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466(A1678-V1.0) G800N06H SOT-223 Package Information www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466(A1678-V1.0)
G800N06H 价格&库存

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G800N06H
  •  国内价格
  • 5+0.76043
  • 50+0.63083
  • 150+0.56603
  • 500+0.51743
  • 2500+0.47855
  • 5000+0.45900

库存:5