G800N06H
N-Channel Enhancement Mode Power MOSFET
Description
The G800N06H uses advanced trench technology to
provide excellent RDS(ON) , low gate charge. It can be used in
a wide variety of applications.
General Features
l
l
l
l
l
VDS
ID (at VGS = 10V)
RDS(ON) (at VGS = 10V)
RDS(ON) (at VGS = 4.5V)
100% Avalanche Tested
<
<
60V
3A
80mΩ
85mΩ
Schematic diagram
l RoHS Compliant
Application
l Power switch
l DC/DC converters
SOT-223
Ordering Information
Device
Package
Marking
Packaging
G800N06H
SOT-223
G800N06
2500psc/Reel
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
VDS
60
V
ID
3
A
IDM
12
A
Gate-Source Voltage
VGS
±20
V
Power Dissipation
PD
1.2
W
TJ, Tstg
-55 To 150
ºC
Symbol
Value
Unit
RthJA
104
ºC/W
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(note1)
Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Ambient
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1678-V1.0)
G800N06H
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
Gate-Source Leakage
Value
Unit
Min.
Typ.
Max.
VGS = 0V, ID = 250µA
60
--
--
V
IDSS
VDS = 60V, VGS = 0V
--
--
1
μA
IGSS
VGS = ±20V
--
--
±100
nA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
0.7
0.9
1.2
V
Drain-Source On-Resistance
RDS(on)
VGS = 10V, ID = 3A
--
65
80
VGS = 4.5V, ID = 3A
--
70
85
Forward Transconductance
gFS
VGS = 5V, ID = 3A
--
9
--
--
457
--
--
25
--
--
22
--
--
6
--
--
1
--
--
1.3
--
--
15
--
--
6
--
--
15
--
--
10
--
Static Parameters
mΩ
S
Dynamic Parameters
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
VGS = 0V,
VDS = 30V,
f = 1.0MHz
VDD = 30V,
ID = 3A,
VGS = 4.5V
VDD = 30V,
ID = 3A,
RG = 1Ω
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
IS
TC = 25ºC
--
--
3
A
Body Diode Voltage
VSD
TJ = 25ºC, ISD = 3A, VGS = 0V
--
--
1.2
V
Reverse Recovery Charge
Qrr
--
38
--
nC
Reverse Recovery Time
Trr
IF = 3A, VGS = 0V
di/dt=100A/us
--
36
--
ns
Notes
1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
Identical low side and high side switch with identical RG
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1678-V1.0)
G800N06H
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1678-V1.0)
G800N06H
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 1. Output Characteristics
16
4.5V
ID, Drain Current (A)
2.4V
12
10
2.1V
8
6
1.8V
4
VGS= 1.5V
2
0
0
1
2
3
RDS(on),On-Resistance(mΩ)
12
10
8
25℃
6
4
0
4
0
1
2
3
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 3. Drain Source On Resistance
Figure 4. Gate Charge
100
90
80
70
VGS= 4.5V
60
VGS= 10V
50
40
30
20
VDS= 5V
14
2
Vgs Gate-Source Voltage(V)
ID, Drain Current (A)
16
10V
14
Figure 2. Transfer Characteristics
0
1
2
3
4
5
5
ID-Drain Current(A)
VDD = 30V,
ID = 3A
4
3
2
1
0
6
4
0
2
4
6
8
Qg Gate Charge(nC)
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
Is, Reverse Drain Current (A)
900
Capacitance(pF)
800
700
600
Ciss
500
400
300
200
100
0
Coss
Crss
0
10
20
30
40
50
60
VDS Drain-Source Voltage(V)
www.gofordsemi.com
TEL:0755-29961263
VSD, Source-to-Drain Voltage (V)
FAX:0755-29961466(A1678-V1.0)
G800N06H
Typical Characteristics TJ = 25ºC, unless otherwise noted
VGS = 10V,
ID = 3A
VGS = 4.5V,
ID = 3A
Figure 8. Safe Operation Area
ID, Drain Current(A)
RDS(on), (Normalized)
Figure 7. Drain-Source On-Resistance
TJ, Junction Temperature (ºC)
VDS, Drain-Source Voltage(V)
ZthJC, Thermal Impedance (ºC/W)
Figure 9. Normalized Maximum Transient
Thermal Impedance
104°C/W
Pulse Width (s)
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1678-V1.0)
G800N06H
SOT-223 Package Information
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1678-V1.0)
很抱歉,暂时无法提供与“G800N06H”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 5+0.76043
- 50+0.63083
- 150+0.56603
- 500+0.51743
- 2500+0.47855
- 5000+0.45900