G2K3N10H

G2K3N10H N-Channel Enhancement Mode Power MOSFET Description The G2K3N10H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested < < 100V 2A 220mΩ 230mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters G D S SOT-223 Ordering Information Device Package Marking Packaging G2K3N10H SOT-223 G2K3N10 2500psc/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 100 V ID 2 A IDM 8 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 2.4 W TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJA 52 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1599-V1.1) G2K3N10H Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 100 -- -- V IDSS VDS = 100V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.5 2 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 2A -- 190 220 VGS = 4.5V, ID = 1A -- 195 230 Forward Transconductance gFS VGS = 5V, ID = 2A -- 6 -- -- 434 -- -- 11 -- -- 10 -- -- 13 -- -- 2.5 -- -- 1.3 -- -- 6 -- -- 4 -- -- 18 -- -- 5 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 50V, f = 1.0MHz VDD = 50V, ID = 2A, VGS = 10V VDD = 50V, ID = 2A, RG = 2.5Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 2 A Body Diode Voltage VSD TJ = 25ºC, ISD = 2A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 0.34 -- nC Reverse Recovery Time Trr IF = 2A, VGS = 0V di/dt=100A/us -- 98 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1599-V1.1) G2K3N10H Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1599-V1.1) G2K3N10H Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 8 10V 7 6 5 3V 4 3 2 VGS= 2.5V 6 5 4 25℃ 3 2 1 1 0 VDS= 5V 7 3.5V 3.3V 4V ID, Drain Current (A) 8 ID, Drain Current (A) Figure 2. Transfer Characteristics 0 1 2 3 0 4 0 VDS, Drain-to-Source Voltage (V) 260 VGS= 4.5V VGS= 10V 140 100 0 1 2 3 600 Ciss 400 300 200 0 Coss 10 20 30 40 50 6 4 2 0 5 10 15 60 VDS Drain-Source Voltage(V) www.gofordsemi.com 8 Is, Reverse Drain Current (A) Capacitance(pF) 700 Crss VDD =50V ID = 2A Figure 6. Source-Drain Diode Forward 800 0 5 Qg Gate Charge（nC） Figure 5. Capacitance 100 4 10 0 4 ID-Drain Current（A） 500 3 Figure 4. Gate Charge Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） 300 180 2 VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance 220 1 TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1599-V1.1) G2K3N10H Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V, ID = 2A VGS = 4.5V ID = 1A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 52°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1599-V1.1) G2K3N10H SOT-223 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1599-V1.1)