BCP56-16

BCP56-16 General Purpose Transistor NPN Silicon Features Package outline • High collector-emitterbreakdien voltage. (BV CEO = 80V@I C=10mA) SOT-223 • Capable of 1.5W power dissipation. • Lead-free parts for green partner, exceeds environmental 0.264(6.70) 0.248(6.30) standards of MIL-STD-19500 /228 0.071(1.80) 0.059(1.50) 0.122(3.10) 0.114(2.90) Mechanical data 0.050(1.25) 0.027(0.70) 0.146(3.70) 0.129(3.30) 0.288(7.30) 0.263(6.70) • Compliant to Halogen-free • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-223 • Terminals : Solder plated, solderable per 0.033(0.84) 0.023(0.60) 0.095(2.40) 0.086(2.20) MIL-STD-750, Method 2026 0.014(0.35) 0.008(0.22) • Mounting Position : Any Dimensions in inches and (millimeters) Maximum ratings (AT T =25 C unless otherwise noted) o A Item Symbol Unit Value Collector-Base Voltage VCBO V 100 Collector-Emitter Voltage VCEO V 80 Emitter-Base Voltage VEBO V 5 Collector Current -Continuous IC A 1 Total Device Dissipation (*) PD W 1.5 Thermal Resistance From Junction To Ambient (*) RθJA ℃/W 83.3 Thermal Resistance From Junction To Solder Point (*) RθJs ℃/W 16 Junction Temperature Tj ℃ -55 to +150 Storage Temperature TSTG ℃ -55 to +150 (*) Device mounted on FR-4 PCB 1.575 x 1.575 x 0.0625 inch; mounting pad for collector =0.93 sq in http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 1 Document ID Issued Date Revised Date Revision Page. AS-3140080 2013/03/08 2022/05/16 D 4 BCP56-16 General Purpose Transistor NPN Silicon Electrical Characteristics (TA = 25°C unless otherwise noted) Item Symbol Unit Conditions Min Collector-base breakdown voltage VCBO V IC = 100uA, IE= 0 100 Collector-emitter breakdown voltage VCEO V IC = 10mA, IB= 0 80 Emitter-base breakdown voltage VEBO V IE = 10uA, IC= 0 5 Collector-base cut-off current ICBO uA VCB= 30V, IE = 0 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Typ Max 0.1 hFE VCE = 2V, IC = 5mA 25 hFE VCE = 2V, IC= 150mA 100 hFE VCE = 2V, IC= 500mA 25 250 VCE(sat) V IC= 500mA, IB = 50mA 0.5 VBE V VCE= 2V, IC = 500mA 1.0 Page 2 Document ID Issued Date Revised Date Revision Page. AS-3140080 2013/03/08 2022/05/16 D 4 BCP56-16 General Purpose Transistor NPN Silicon Rating and characteristic curves http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 3 Document ID Issued Date Revised Date Revision Page. AS-3140080 2013/03/08 2022/05/16 D 4 BCP56-16 General Purpose Transistor NPN Silicon Pinning information Pin Simplified outline Symbol C PinB PinC PinE C Base Collector Emitter B E B C E Marking Type number BCP56-16 Marking code BCP56-16 Suggested solder pad layout SOT-223 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 4 Document ID Issued Date Revised Date Revision Page. AS-3140080 2013/03/08 2022/05/16 D 4