TSC873CW RPG

TSC873CW Taiwan Semiconductor NPN Silicon Planar High Voltage Transistor FEATURES KEY PERFORMANCE PARAMETERS ● High BVCEO, BVCBO ● High current gain ● Compliant to RoHS Directive 2011/65/EU ● and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21 Lighting ● Switch mode power supply VALUE UNIT BVCEO 400 V BVCBO 600 V IC 1 A 0.5 V VCE(SAT) APPLICATION ● PARAMETER IC=0.5A, IB=0.1A SOT-223 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V 1 A 2 A DC Collector Current IC Pulse Power Total Dissipation @ TA=25ºC PDTOT Maximum Operating Junction Temperature TJ Storage Temperature Range TSTG 1 1.2 W +150 o -55 to +150 o C C Version: E1801 TSC873CW Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 1) Collector-Base voltage IC =100μA BVCBO 600 -- -- V Collector-Emitter breakdown voltage IC =1mA BVCEO 400 -- -- V Emitter-Base breakdown voltage IE =100μA BVEBO 9 -- -- V Emitter cut-off current VEB =8V IEBO -- -- 100 µA Collector cut-off current VCB =600V ICBO -- -- 100 µA Collector-Emitter Cutoff Current VCE = 400V ICEO -- -- 1 mA Collector-Emitter saturation voltage IC =500mA, IB =100mA VCE(SAT) 1 --- -- 0.5 V Collector-Emitter saturation voltage IC =1A, IB =250mA VCE(SAT) 2 --- -- 1 V Base-Emitter saturation voltage IC =500mA, IB =100mA VBE(SAT) 1 -- -- 1 V Base-Emitter saturation voltage IC =1A, IB =250mA VBE(SAT) 2 -- -- 1.2 V hFE1 80 -- -- Ton -- 1 -- µs TSTG -- 4 -- µs Tf -- 0.7 -- µs DC Current Gain Resistive Load Switching Time VCE =10V, IC =250mA (Note 2) Turn-on Time VCC =125V, IC =1A, Storage Time IB1 =IB2 =200mA Fall Time Notes: 1. Pulse test: ≤ 380µs, duty cycle ≤ 2% 2. For DESIGN AID ONLY, not subject to production testing. ORDERING INFORMATION PART NO. PACKAGE PACKING TSC873CW RPG SOT-223 2,500pcs / 13”Reel 2 Version: E1801 TSC873CW Taiwan Semiconductor Electrical Characteristics Curve o (Ta = 25 C, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. IC Figure 4. VBE(sat) vs Ic Figure 5. VBE(on) vs Ic Figure 6. Safety Operation Area 3 Version: E1801 TSC873CW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOT-223 SUGGESTED PAD LAYOUT (Unit: Millimeters) Marking Diagram Y M L = Year Code = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec = Lot Code 4 Version: E1801 TSC873CW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: E1801