G1K3N10G

G1K3N10G N-Channel Enhancement Mode Power MOSFET Description The G1K3N10G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested < < 100V 5A 130mΩ 150mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters SOT-89 Ordering Information Device Package Marking Packaging G1K3N10G SOT-89 G1K3N10 1000pcs/Carton Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 100 V ID 5 A IDM 20 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.5 W TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJA 83 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1692-V1.0) G1K3N10G Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 100 -- -- V IDSS VDS = 100V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.6 2 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 5A -- 110 130 VGS = 4.5V, ID = 5A -- 120 150 Forward Transconductance gFS VGS = 5V, ID = 5A -- 7 -- -- 644 -- -- 25 -- -- 14 -- -- 20 -- -- 2.1 -- -- 3.3 -- -- 6 -- -- 4 -- -- 20 -- -- 4 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 50V, f = 1.0MHz VDD = 50V, ID = 5A, VGS = 10V VDD = 50V, ID = 5A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 5 A Body Diode Voltage VSD TJ = 25ºC, ISD = 5A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 11 -- nC Reverse Recovery Time Trr IF = 5A, VGS = 0V di/dt=100A/us -- 22 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1692-V1.0) G1K3N10G Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1692-V1.0) G1K3N10G Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 12 12 10V VDS= 5V 4.5V ID, Drain Current (A) ID, Drain Current (A) 10 8 6 3.3V 4 3.1V 2 0 1 2 3 RDS(on),On-Resistance（mΩ） 25℃ 4 0 2 4 6 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance Figure 4. Gate Charge 160 150 140 130 VGS= 4.5V 120 110 100 VGS= 10V 90 80 70 60 6 0 4 Vgs Gate-Source Voltage（V） 0 8 2 VGS= 2.5V 2.8V 10 0 2 4 6 8 10 ID-Drain Current（A） VDD = 50V, ID = 5A 8 6 4 2 0 10 8 0 5 10 15 20 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Ciss 700 Capacitance(pF) Is, Reverse Drain Current (A) 800 600 500 400 300 200 100 0 Crss 0 Coss 10 20 30 40 50 60 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1692-V1.0) G1K3N10G Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V, ID = 5A VGS = 4.5V, ID = 5A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 0.45°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1692-V1.0) G1K3N10G SOT-89 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1692-V1.0)