BCX52TF

BCX52T series 60 V, 1 A PNP power bipolar transistors Rev. 1 — 22 August 2019 Product data sheet 1. Product profile 1.1. General description PNP power transistors in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number NPN complement Package BCX52T Nexperia JEDEC SOT89 SC-62 BCX55T BCX52-10T BCX55-10T BCX52-16T BCX55-16T 1.2. Features and benefits • • • • High collector current capability IC and ICM Three current gain selections High power dissipation capability AEC-Q101 qualified 1.3. Applications • • • • • Linear voltage regulators MOSFET drivers High-side switches Power management Amplifiers 1.4. Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -60 V IC collector current - - -1 A ICM peak collector current - - -2 A single pulse; tp ≤ 1 ms BCX52T series Nexperia 60 V, 1 A PNP power bipolar transistors Symbol Parameter Conditions Min Typ Max hFE DC current gain [1] 63 - 250 BCX52-10T [1] 63 - 160 BCX52-16T [1] 100 - 250 BCX52T [1] VCE = -2 V; IC = -150 mA Unit pulsed; tp ≤ 300 μs; δ ≤ 0.02 2. Pinning information Table 3. Pinning Pin Symbol Description 1 E emitter 2 C collector 3 B base Simplified outline Graphic symbol C B 3 2 E 1 006aaa231 3. Ordering information Table 4. Ordering information Type number Package BCX52T BCX52-10T Name Description Version SC-62 plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5 mm x 2.5 mm x 1.5 mm body SOT89 BCX52-16T 4. Marking Table 5. Marking Type number Marking code BCX52T C2 BCX52-10T C3 BCX52-16T C4 BCX52T_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 August 2019 © Nexperia B.V. 2019. All rights reserved 2 / 12 BCX52T series Nexperia 60 V, 1 A PNP power bipolar transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -60 V VCEO collector-emitter voltage open base - -60 V VEBO emitter-base voltage open collector - -5 V IC collector current - -1 A ICM peak collector current - -2 A IB base current - -200 mA IBM peak base current single pulse; tp ≤ 1 ms - -300 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 500 mW [2] - 800 mW [3] - 1100 mW single pulse; tp ≤ 1 ms Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm . 2 Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 6 cm . 006aaa238 1600 Ptot (mW) 1200 (1) (2) 800 (3) 400 0 - 75 - 25 25 75 125 175 Tamb (°C) 2 (1) FR4 PCB; 6 cm mounting pad for collector 2 (2) FR4 PCB; 1 cm mounting pad for collector (3) FR4 PCB; standard footprint Fig. 1. Power derating curves BCX52T_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 August 2019 © Nexperia B.V. 2019. All rights reserved 3 / 12 BCX52T series Nexperia 60 V, 1 A PNP power bipolar transistors 6. Thermal characteristics Table 7. Thermal characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air [1] [2] [3] Min Typ Max Unit [1] - - 250 K/W [2] - - 157 K/W [3] - - 114 K/W Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm . 2 Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 6 cm . 006aaa235 103 Zth (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0 1 10-5 0.01 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB; single-sided copper; tin-plated and standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa236 103 Zth (K/W) duty cycle = 1 102 0.75 0.33 0.1 10 0 1 10-5 0.5 0.2 0.05 0.02 0.01 10-4 10-3 10-2 10-1 1 FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm Fig. 3. 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BCX52T_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 August 2019 © Nexperia B.V. 2019. All rights reserved 4 / 12 BCX52T series Nexperia 60 V, 1 A PNP power bipolar transistors 006aaa237 103 Zth (K/W) 102 duty cycle = 1 0.75 0.33 0.5 0.2 10 0.1 0.05 0.02 0 0.01 1 10-5 10-4 10-3 10-2 10-1 1 FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 6 cm Fig. 4. 102 10 103 tp (s) 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ V(BR)CBO collector-base breakdown voltage IC = -100 µA; IE = 0 A -60 - V V(BR)CEO collector-emitter breakdown voltage IC = -2 mA; IE = 0 A -60 - V V(BR)EBO emitter-base breakdown voltage IE = -100 µA; IC = 0 A -5 - V ICBO collector-base cut-off current VCB = -30 V; IE = 0 A - - -100 nA VCB = -30 V; IE = 0 A; Tj = 150 °C - - -10 μA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A - - -100 nA hFE DC current gain VCE = -2 V; IC = -5 mA 63 - - BCX52T, -10T, -16T Max VCE = -2 V; IC = -500 mA [1] 40 - - BCX52T VCE = -2 V; IC = -150 mA [1] 63 - 250 BCX52-10T VCE = -2 V; IC = -150 mA [1] 63 - 160 Unit BCX52-16T VCE = -2 V; IC = -150 mA [1] 100 - 250 VCEsat collector-emitter saturation voltage IC = -500 mA; IB = -50 mA [1] - - -500 mV VBE base-emitter voltage VCE = -2 V; IC = -500 mA [1] - - -1 V fT transition frequency VCE = -5 V; IC = -50 mA; f = 100 MHz - 140 - MHz Cc collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - 7 - pF [1] pulsed; tp ≤ 300 μs; δ ≤ 0.02 BCX52T_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 August 2019 © Nexperia B.V. 2019. All rights reserved 5 / 12 BCX52T series Nexperia 60 V, 1 A PNP power bipolar transistors aaa-023494 250 (1) hFE aaa-023495 200 hFE 200 150 (2) 150 100 100 (3) 50 0 -10-1 -1 -10 -102 0 -10-1 -103 -104 IC (mA) VCE = -2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig. 5. (1) (2) (3) 50 aaa-023496 IB (mA) = -15 IC (A) -13.5 -10.5 -0.8 Fig. 6. -0.6 -103 -104 IC (mA) aaa-023497 -1.2 VBE (V) -12 -9 -0.9 (1) -6 (2) -0.6 -4.5 -0.4 (3) -3 -0.2 -0.3 -1.5 0 -1 -2 -3 -4 VCE (V) 0 -10-1 -5 Tamb = 25 °C Fig. 7. -102 DC current gain as a function of collector current; typical values -7.5 0 -10 Tamb = 25 °C (1) VCE = -1 V (2) VCE = -2 V (3) VCE = -5 V DC current gain as a function of collector current; typical values -1 -1 Fig. 8. Product data sheet -10 -102 -103 -104 IC (mA) VCE = -2 V (1) Tamb = -55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Collector current as a function of collectoremitter voltage; typical values BCX52T_SER -1 Base-emitter voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 August 2019 © Nexperia B.V. 2019. All rights reserved 6 / 12 BCX52T series Nexperia 60 V, 1 A PNP power bipolar transistors aaa-023498 -1.2 VBEsat (V) VCESat (V) (1) -0.8 aaa-023499 -1 (2) (1) (2) (3) -10-1 (3) -0.4 0 -10-1 -1 -10 -102 -103 -104 IC (mA) -10-2 -10-1 IC/IB = 10 (1) Tamb = -55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 9. -1 -10 -102 -103 -104 IC (mA) IC/IB = 10 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Base-emitter saturation voltage as a function of Fig. 10. Collector-emitter saturation voltage as a collector current; typical values function of collector current; typical values aaa-023500 -1 aaa-023501 25 Cc (pF) 20 VCESat (V) 15 -10-1 (1) 10 (2) 5 (3) -10-2 -10-1 -1 -10 -102 -103 -104 IC (mA) 0 0 -20 -40 -60 -80 -100 VCB (V) f = 1 MHz; Tamb = 25 °C Tamb = 25 °C (1) IC/IB = 50 (2) IC/IB = 20 (3) IC/IB = 5 Fig. 12. Collector capacitance as a function of collectorbase voltage; typical values Fig. 11. Collector-emitter saturation voltage as a function of collector current; typical values BCX52T_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 August 2019 © Nexperia B.V. 2019. All rights reserved 7 / 12 BCX52T series Nexperia 60 V, 1 A PNP power bipolar transistors aaa-023502 70 Ce (pF) 60 aaa-023503 103 fT (MHz) 50 40 102 30 20 10 0 0 -1 -2 -3 -4 VEB (V) 10 -10-1 -5 f = 1 MHz; Tamb = 25 °C Fig. 13. Emitter capacitance as a function of emitterbase voltage; typical values -1 -10 -102 IC (mA) -103 VCE = -5 V f = 100 MHz; Tamb = 25 °C Fig. 14. Transition frequency as a function of collector current; typical values 8. Test information 8.1. Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 0.53 0.40 1.5 1.2 0.8 3 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig. 15. Package outline SOT89 (SC-62) BCX52T_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 August 2019 © Nexperia B.V. 2019. All rights reserved 8 / 12 BCX52T series Nexperia 60 V, 1 A PNP power bipolar transistors 10. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 1 (3×) 4.85 occupied area 1.1 (2×) 1.5 solder paste Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig. 16. Reflow soldering footprint for SOT89 (SC-62) 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig. 17. Wave soldering footprint for SOT89 (SC-62) BCX52T_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 August 2019 © Nexperia B.V. 2019. All rights reserved 9 / 12 BCX52T series Nexperia 60 V, 1 A PNP power bipolar transistors 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BCX52T_SER v.1 20190822 Product data sheet - BCX52T_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 August 2019 - © Nexperia B.V. 2019. All rights reserved 10 / 12 BCX52T series Nexperia 60 V, 1 A PNP power bipolar transistors equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 12. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. Definitions Draft — The document is a draft version only. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or BCX52T_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 August 2019 © Nexperia B.V. 2019. All rights reserved 11 / 12 BCX52T series Nexperia 60 V, 1 A PNP power bipolar transistors Contents 1. Product profile.............................................................. 1 1.1. General description......................................................1 1.2. Features and benefits..................................................1 1.3. Applications................................................................. 1 1.4. Quick reference data................................................... 1 2. Pinning information......................................................2 3. Ordering information....................................................2 4. Marking.......................................................................... 2 5. Limiting values............................................................. 3 6. Thermal characteristics............................................... 4 7. Characteristics.............................................................. 5 8. Test information............................................................8 8.1. Quality information.......................................................8 9. Package outline............................................................ 8 10. Soldering..................................................................... 9 11. Revision history........................................................ 10 12. Legal information......................................................11 © Nexperia B.V. 2019. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 22 August 2019 BCX52T_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 August 2019 © Nexperia B.V. 2019. All rights reserved 12 / 12