G33N03D52

G33N03D52 N-Channel Enhancement Mode Power MOSFET Description The G33N03D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested < < 30V 33A 13mΩ 30mΩ l RoHS Compliant pin assignment Application l Power switch l DC/DC converters DFN5X6 Dual Ordering Information Device Package Marking Packaging G33N03D52 DFN5*6-8L Dual G33N03 5000psc/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 30 V ID 33 A IDM 132 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 29 W EAS 42 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 60 ºC/W Maximum Junction-to-Case RthJC 4.2 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1540) G33N03D52 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 30 -- -- V IDSS VDS = 30V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.85 3 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 16A -- 8 13 VGS = 4.5V, ID = 14A -- 26 30 Forward Transconductance gFS VGS = 5V, ID = 16A -- 23 -- -- 782 -- -- 154 -- -- 144 -- -- 17.5 -- -- 3 -- -- 7.1 -- -- 5 -- -- 12 -- -- 19 -- -- 6 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 15V, f = 1.0MHz VDD = 15V, ID = 10A, VGS = 10V VDD = 15V, ID = 10A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 33 A Body Diode Voltage VSD TJ = 25ºC, ISD = 16A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 23 -- nC Reverse Recovery Time Trr IF = 20A, VGS = 0V di/dt=500A/us -- 11 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=30V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1540) G33N03D52 Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1540) G33N03D52 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 120 120 VDS= 5V 8V 6.5V ID, Drain Current (A) ID, Drain Current (A) 100 80 5.5V 60 40 4.5V 20 0 VGS=3.5V 0.5 1 1.5 80 60 25℃ 40 20 4V 0 100 2 2.5 0 3 0 VDS, Drain-to-Source Voltage (V) Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） 35 30 VGS = 4.5V 20 15 VGS = 10V 10 5 0 2 4 6 8 10 12 4 6 8 10 12 VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance 25 2 Figure 4. Gate Charge 10 8 6 4 2 0 14 ID-Drain Current（A） VDD = 15V ID = 10A 0 5 10 15 20 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) 1400 Capacitance(pF) 1200 1000 Ciss 800 600 400 Coss 200 0 Crss 0 5 10 15 20 25 30 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1540) G33N03D52 Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V, ID = 16A VGS = 4.5V, ID = 14A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 4.2°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1540) G33N03D52 DFN5X6-8L Dual Package information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1540)