GT090N06D52

GT090N06D52 DUAL N-Channel Enhancement Mode Power MOSFET Description The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested Schematic diagram < < 60V 40A 14mΩ 18mΩ l RoHS Compliant pin assignment Application l Power switch l DC/DC converters DFN5X6 Dual Ordering Information Device Package Marking Packaging GT090N06D52 DFN5X6 Dual GT090N06 5000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 60 V ID 40 A IDM 160 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 62 W EAS 20 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 65 ºC/W Maximum Junction-to-Case RthJC 2 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1348-V1.2) GT090N06D52 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 60 -- -- V IDSS VDS = 60V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.4 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 14A -- 9 14 VGS = 4.5V, ID = 10A -- 12 18 Forward Transconductance gFS VGS = 5V, ID = 14A -- 24 -- -- 1011 -- -- 304 -- -- 25 -- -- 24 -- -- 5 -- -- 3 -- -- 9 -- -- 4 -- -- 29 -- -- 4 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 30V, f = 1.0MHz VDD = 30V, ID = 14A, VGS = 10V VDD = 30V, ID = 14A, RG = 10Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 40 A Body Diode Voltage VSD TJ = 25ºC, ISD = 14A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 65 -- nC Reverse Recovery Time Trr IF = 14A, VGS = 0V di/dt=500A/us -- 19 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1348-V1.2) GT090N06D52 Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1348-V1.2) GT090N06D52 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 120 120 4.5V 10V VDS= 5V ID, Drain Current (A) 3.5V 60 40 3V 20 0 RDS(on),On-Resistance（mΩ） 4V 80 0 1 2 3 25℃ 40 4 6 8 Figure 4. Gate Charge VGS= 4.5V 8 VGS= 10V 6 4 10 4 8 12 16 20 24 28 6 4 2 Ciss 1000 Coss 400 200 Crss 10 20 30 40 50 15 20 25 30 60 VDS Drain-Source Voltage(V) www.gofordsemi.com 10 Is, Reverse Drain Current (A) 1400 600 5 Figure 6. Source-Drain Diode Forward 1600 800 0 Qg Gate Charge（nC） Figure 5. Capacitance 1200 VDD = 30V, ID = 14A 8 0 0 2 Figure 3. Drain Source On Resistance 10 0 0 VGS, Gate-to-Source Voltage (V) ID-Drain Current（A） Capacitance(pF) 60 VDS, Drain-to-Source Voltage (V) 12 0 80 0 4 14 2 100 20 VGS= 2.5V Vgs Gate-Source Voltage（V） ID, Drain Current (A) 100 TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1348-V1.2) GT090N06D52 Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V, ID = 14A VGS = 4.5V, ID = 10A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 2°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1348-V1.2) GT090N06D52 DFN5X6-8L Dual Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1348-V1.2)