PSMN1R5-50YLH
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level
Application Specific MOSFET in LFPAK56E
26 January 2022
Product data sheet
1. General description
200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET
in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family
and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking
performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode
but without problematic high leakage current. The ASFET is particularly suited to 36 V battery
powered applications requiring strong avalanche capability, linear mode performance, use at high
switching frequencies, and also safe and reliable switching at high load-current.
2. Features and benefits
•
•
•
•
•
•
•
•
•
•
•
200 A continuous current capability
Optimised for 36 V (nominal) battery powered applications
LFPAK56E low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy
solder-joint inspection
Copper-clip and solder die attach for low package inductance and resistance, and high ID (max)
rating
Qualified to 175 °C
Avalanche rated, 100% tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for
low EMI designs
Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at
high-current conditions
3. Applications
•
•
•
•
•
Brushless DC motor control
Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies
Battery protection and Battery Management Systems (BMS)
Load switch
10 cell lithium-ion battery applications (36 V ‒ 42 V)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
-
50
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
200
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
-
333
W
Tj
junction temperature
-55
-
175
°C
[1]
PSMN1R5-50YLH
Nexperia
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
-
1.4
1.75
mΩ
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10
-
1.6
2
mΩ
ID = 25 A; VDS = 25 V; VGS = 4.5 V;
Fig. 12; Fig. 13
-
13
29
nC
-
53
82
nC
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
[1]
200A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
Simplified outline
1
S
source
2
S
source
3
S
source
4
G
gate
mb
D
mounting base; connected
to drain
Graphic symbol
D
G
1
2
3
4
mbb076
S
LFPAK56E; PowerSO8 (SOT1023)
6. Ordering information
Table 3. Ordering information
Type number
Package
PSMN1R5-50YLH
Name
Description
Version
LFPAK56E;
Power-SO8
plastic, single-ended surface-mounted package
(LFPAK56); 4 leads; 1.27 mm pitch
SOT1023
7. Marking
Table 4. Marking codes
Type number
Marking code
PSMN1R5-50YLH
1H550L
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
50
V
VDGR
drain-gate voltage
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
50
V
PSMN1R5-50YLH
Product data sheet
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PSMN1R5-50YLH
Nexperia
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E
Symbol
Parameter
Conditions
VGS
gate-source voltage
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
[1]
Min
Max
Unit
-20
20
V
-
333
W
-
200
A
VGS = 10 V; Tmb = 100 °C; Fig. 2
-
200
A
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
1159
A
IDM
peak drain current
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering
temperature
-
260
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
200
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
1159
A
Avalanche ruggedness
EDS(AL)S
IAS
[1]
[2]
ID = 50 A; Vsup ≤ 50 V; RGS = 50 Ω;
non-repetitive drainsource avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 513 µs
[2]
-
833
mJ
ID = 25 A; Vsup ≤ 50 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 2.5 ms
[2]
-
2
J
[2]
-
115
A
non-repetitive avalanche Vsup ≤ 50 V; VGS = 10 V; Tj(init) = 25 °C;
current
RGS = 50 Ω
200A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
Protected by 100% test
03aa16
120
Pder
(%)
80
aaa-032723
300
ID
(A)
250
200
(1)
150
40
100
50
0
Fig. 1.
0
50
100
150
Tmb (°C)
0
200
Fig. 2.
Product data sheet
25
50
75
100
125
150 175
Tmb (°C)
200
VGS ≥ 10 V
(1) 200A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Normalized total power dissipation as a
function of mounting base temperature
PSMN1R5-50YLH
0
Continuous drain current as a function of
mounting base temperature
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PSMN1R5-50YLH
Nexperia
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E
ID
(A)
aaa-032724
104
103
Limit RDSon = VDS / ID
tp = 10 µs
102
100 µs
DC
10
1 ms
10 ms
100 ms
1
10-1
10-1
1
10
102
VDS (V)
Tmb = 25 °C; IDM is a single pulse
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from Fig. 4
junction to mounting
base
Conditions
-
0.33
0.45
K/W
Rth(j-a)
thermal resistance from Fig. 5
junction to ambient
Fig. 6
-
42
-
K/W
-
85
-
K/W
aaa-028225
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1 0.2
0.1
0.05
10-2
0.02
P
single shot
δ=
Fig. 4.
10-5
10-4
10-3
10-2
T
t
tp
10-3
10-6
tp
T
10-1
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN1R5-50YLH
Product data sheet
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PSMN1R5-50YLH
Nexperia
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E
aaa-027933
aaa-027935
Copper area 25.4 mm square; 70 µm thick on FR4
board
Fig. 5.
PCB layout for thermal resistance from junction
to ambient
70 µm thick copper on FR4 board
Fig. 6.
PCB layout with minimum footprint for thermal
resistance from junction to ambient
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
50
-
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
45
-
-
V
VGS(th)
gate-source threshold
voltage
ID = 1 mA; VDS=VGS; Tj = 25 °C
1.2
1.61
2.2
V
ΔVGS(th)/ΔT
gate-source threshold
voltage variation with
temperature
25 °C ≤ Tj ≤ 150 °C
-
-4.6
-
mV/K
IDSS
drain leakage current
VDS = 40 V; VGS = 0 V; Tj = 25 °C
-
0.01
1
µA
VDS = 40 V; VGS = 0 V; Tj = 125 °C
-
3.9
-
µA
VGS = 16 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = -16 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
-
1.4
1.75
mΩ
VGS = 10 V; ID = 25 A; Tj = 150 °C;
Fig. 11
-
-
3.52
mΩ
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10
-
1.6
2
mΩ
VGS = 4.5 V; ID = 25 A; Tj = 150 °C;
Fig. 11
-
-
4.02
mΩ
f = 1 MHz; Tj = 25 °C
0.52
1.3
3.3
Ω
ID = 25 A; VDS = 25 V; VGS = 4.5 V;
Fig. 12; Fig. 13
-
53
82
nC
ID = 25 A; VDS = 25 V; VGS = 10 V;
Fig. 12; Fig. 13
-
117
181
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
-
61
-
nC
Static characteristics
V(BR)DSS
IGSS
RDSon
RG
gate leakage current
drain-source on-state
resistance
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
PSMN1R5-50YLH
Product data sheet
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PSMN1R5-50YLH
Nexperia
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
QGS
gate-source charge
-
17
26
nC
QGS(th)
pre-threshold gatesource charge
ID = 25 A; VDS = 25 V; VGS = 4.5 V;
Fig. 12; Fig. 13
-
11.3
17
nC
QGS(th-pl)
post-threshold gatesource charge
-
5.4
8
nC
QGD
gate-drain charge
-
13
29
nC
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 25 V; Fig. 12; Fig. 13
-
2.5
-
V
Ciss
input capacitance
-
7959
11143 pF
Coss
output capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 14
-
799
1119
pF
Crss
reverse transfer
capacitance
-
231
554
pF
td(on)
turn-on delay time
-
39
-
ns
tr
rise time
-
40
-
ns
td(off)
turn-off delay time
-
68
-
ns
tf
fall time
Qoss
output charge
VDS = 25 V; RL = 1 Ω; VGS = 4.5 V;
RG(ext) = 5 Ω
-
32
-
ns
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C
-
42
-
nC
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15
-
0.75
1
V
trr
reverse recovery time
36
-
ns
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Fig. 16
[1]
-
Qr
-
37
-
nC
ta
reverse recovery rise
time
-
21
-
ns
tb
reverse recovery fall
time
-
14
-
ns
[1]
includes capacitive recovery
aaa-032725
250
10 V 4.5 V
ID
(A)
RDSon
(mΩ)
3V
200
aaa-032726
8
6
VGS = 2.8 V
150
4
100
2.6 V
2
50
2.4 V
0
Fig. 7.
0
1
2
3
VDS (V)
0
4
0
2
4
6
8
10
12
14
VGS (V)
16
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Output characteristics; drain current as a
Fig. 8.
function of drain-source voltage; typical values
Drain-source on-state resistance as a function
of gate-source voltage; typical values
PSMN1R5-50YLH
Product data sheet
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PSMN1R5-50YLH
Nexperia
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E
aaa-032727
300
ID
(A)
RDSon
(mΩ)
240
aaa-032728
8
2.6 V
2.8 V
3V
6
180
4
120
0
150°C
0
1
Tj = 25°C
2
3
VGS (V)
VGS = 10 V
0
4
VDS = 8 V
Fig. 9.
a
4.5 V
2
60
0
50
100
150
200
ID (A)
250
Tj = 25 °C
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
aaa-032798
2.5
VGS
(V)
aaa-032729
10
2
8
1.5
6
40 V
1
25 V
4
VDS = 10 V
0.5
0
-60
2
-30
0
30
60
90
120 150
Tj (°C)
0
180
0
26
52
78
104
QG (nC)
130
Tj = 25 °C; ID = 25 A
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN1R5-50YLH
Product data sheet
Fig. 12. Gate-source voltage as a function of gate
charge; typical values
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PSMN1R5-50YLH
Nexperia
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E
aaa-032730
104
C
(pF)
VDS
Ciss
ID
103
Coss
VGS(pl)
Crss
102
VGS(th)
VGS
QGS2
QGS1
QGS
10
10-1
QGD
QG(tot)
IS
(A)
10
VDS (V)
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aal160
aaa-032731
103
102
VGS = 0 V; f = 1 MHz
003aaa508
Fig. 13. Gate charge waveform definitions
1
ID
(A)
trr
102
ta
tb
0
10
0.25 IRM
150°C
1
0
0.2
0.4
Tj = 25°C
0.6
0.8
VSD (V)
IRM
t (s)
1
VGS = 0 V
Fig. 16. Reverse recovery timing definition
Fig. 15. Source-drain (diode forward) current as a
function of source-drain (diode forward)
voltage; typical values
PSMN1R5-50YLH
Product data sheet
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PSMN1R5-50YLH
Nexperia
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E
11. Package outline
Plastic single-ended surface-mounted package (LFPAK56E); 4 leads
A
E
SOT1023
E1
A
b1
b2
(3x)
c1
mounting
base
H
D1
D
L
1
2
3
4
b
e
A1
w
A
X
c
C
θ
Lp
detail X
0
2.5
mm
5 mm
scale
Dimensions
Unit
y C
A
A1
b
b1
b2
c
c1
D(1) D1(1) E(1) E1(1)
max 1.10 0.15 0.50 4.41
0.25 0.30 4.70 4.45 5.30
nom
0.85
min 0.95 0.00 0.35 3.62
0.19 0.24 4.45
4.95
3.7
3.5
e
1.27
H
L
Lp
6.2
1.3
0.85
5.9
0.8
0.40
w
y
0.25
0.1
θ
8°
0°
Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
Outline
version
sot1023_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
13-03-05
17-07-31
SOT1023
Fig. 17. Package outline LFPAK56E; Power-SO8 (SOT1023)
PSMN1R5-50YLH
Product data sheet
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PSMN1R5-50YLH
Nexperia
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E
12. Soldering
4.7
4.2
0.25
(2×)
0.9
(3×)
0.25
(2×)
0.6
(4×)
3.45
0.6
(3×)
2
3.5
2.55
0.25
(2×)
SR opening =
Cu + 0.075
1.1
2.15
3.3
SP opening =
Cu - 0.050
0.7
(4×)
1.27
3.81
solder lands
solder paste
125 µm stencil
solder resist
occupied area
sot1023_fr
Fig. 18. Reflow soldering footprint for LFPAK56E; Power-SO8 (SOT1023)
PSMN1R5-50YLH
Product data sheet
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PSMN1R5-50YLH
Nexperia
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E
13. Legal information
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
PSMN1R5-50YLH
Product data sheet
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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26 January 2022
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PSMN1R5-50YLH
Nexperia
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Package outline.......................................................... 9
12. Soldering................................................................... 10
13. Legal information......................................................11
©
Nexperia B.V. 2022. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 26 January 2022
PSMN1R5-50YLH
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 January 2022
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Nexperia B.V. 2022. All rights reserved
12 / 12
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