CGD65B200S2-T13

650 V / 200 mΩ GaN HEMT with ICeGaN™ Gate and Current Sense DECEMBER 2022 www.camgandevices.com Issued 2022-12-23 01 !Sy CGD65B200S2 DATASHEET Datasheet 1.0 – December 2022 650 V / 200 mΩ GaN HEMT with ICeGaN™ Gate and Current Sense Key features • 650 V - 8.5 A e-mode GaN power switch • ICeGaN™ gate technology for high gate threshold and broad gate voltage window compatible with gate-drivers and controllers for Si MOSFETs • Gate drive voltage 9 V to 20 V • Current sense function • RDS(on) = 200 mΩ • Suitable for very high switching frequency • Kelvin Contact • Small 5x6 mm2 PCB footprint • Bottom side cooled DFN package Description Application & Topologies The CGD65B200S2 is an enhancement mode PSUs, Industrial SMPS and inverters GaN-on-silicon power transistor, exploiting the • Mobile chargers, fast-chargers unique material properties of GaN to deliver high • AC adapters current, high breakdown voltage and high • Notebook adapters, PC power switching frequency for a wide range of electronics • Gaming PSUs applications. The CGD65B200S2 features CGD’s • LED lighting ICeGaN™ gate technology enabling compatibility • Class-D Audio with virtually all gate drivers and controller chips • TV and wireless power available. The integrated current sense function • PV micro-inverters eliminates a separate current sense resistor and the • SMPS and converters in single-switch and half- associated efficiency losses. Because no external bridge topologies with hard- or soft-switching sense resistor is needed, the device can be directly • DC/DC converters soldered to the large copper area of the ground • Quasi-resonant flyback and Active Clamp plane, improving the thermal performance and flyback simplifying the thermal design. It comes in a • Totem pole and single-switch PFC DFN 5x6 SMD package to support high frequency • LLC and high frequency converters operation while ensuring the highest thermal • Class-E inverters performance. www.camgandevices.com Issued 2022-12-23 02 !Sy CGD65B200S2 DATASHEET Datasheet 1.0 – December 2022 VCC VD D SMPS Controller OUT RG GND D G K CS S Figure 1. Exemplary Application Circuit PIN 1 NAME Kelvin Source DESCRIPTION Kelvin source connection (internally tied to power HEMT source), reference potential for gate voltage. 2 Gate Gate signal input. Recommended gate-drive voltage: Vdrive (VGS in on-state) = 9 V to VDD. 3 Current Sense Current sense output, relative to source, non-isolated. 4 VDD ICeGaN™ gate supply voltage (recommended at 12 V), relative to source. 5-8 Drain Power HEMT drain 9 Source Power HEMT source, thermal pad Figure 2. Pin Configuration and Functions www.camgandevices.com Issued 2022-12-23 03 !Sy CGD65B200S2 DATASHEET Datasheet 1.0 – December 2022 Absolute Maximum Ratings Tcase = 25 °C if not listed. PARAMETER VALUE UNIT Operating Junction Temperature TJ -55 to +150 °C Storage Temperature Range TS -55 to +150 °C Drain-to-Source Voltage VDS 650 V Drain-to-Source Voltage - transient 1 VDS(transient) 750 V Gate-to-Source Voltage VGS -1 to +20 V and VGS ≤ VDD Gate-to-Source Voltage - transient 2 VGS(transient) -1.5 to +21.5 and V VGS ≤ VDD + 1.5 Current Sense Voltage VCS -1.5 to 1.5 V ICeGaN™ Gate Supply Voltage VDD 0 to +20 V Continuous Drain Current (Tcase= 25 °C) ID 8.5 A The recommended range of operation for Vdrive (VGS in on-state) and VDD is 9 V to 20 V, enabling simple integration with a large variety of control chips and gate drivers. Recommended maximum operating case temperature: Tcase = 125 °C. 1 Non-repetitive pulsed conditions, < 1 ms. 2 Non-repetitive pulsed conditions. www.camgandevices.com Issued 2022-12-23 04 !Sy CGD65B200S2 DATASHEET Datasheet 1.0 – December 2022 Electrical Characteristics Values at TJ = 25 °C, VDD = 12 V if not listed. To turn the device on the recommended gate voltage range is VGS = 9 V to VDD. To turn the device off set VGS = 0 V. An integrated Miller Clamp eliminates the need for negative gate voltages. STATIC CHARACTERISTICS PARAMETER CONDITIONS MIN TYP Drain-to-Source Blocking Voltage BVDS VGS = 0 V, IDSS = 5.5 µA Drain-to-Source On Resistance RDS(on) VGS = 12 V, ID = 0.6 A 200 Drain-to-Source On Resistance RDS(on) TJ = 150 °C 530 MAX 650 UNIT V 280 mΩ mΩ VGS = 12 V, ID = 0.6 A Source-to-Drain Voltage VSD(on) VGS = 0 V, ID = 0.6 A Gate-to-Source Threshold VGS(th) VDS = 0.1 V, ID = 2.75 mA Gate-to-Source Threshold VGS(th) TJ = 150 °C 2.2 2.0 3.7 V 2.9 4.2 V 2.6 V VDS = 0.1 V, ID = 2.75 mA Gate-to-Source Current IGS VGS = 12 V, VDS= 0 V 2.8 Gate-to-Source Current IGS TJ = 150 °C 2.5 3.7 mA mA VGS = 12 V, VDS= 0 V VDD current IVDD VGS = 12 V, VDS= 0 V 1.8 VDD current IVDD TJ = 150 °C 1.1 2.8 mA mA VGS = 12 V, VDS= 0 V Drain-to-Source Leakage Current IDSS VGS = 0 V, VDS = 650 V 0.1 Drain-to-Source Leakage Current IDSS TJ = 150 °C 6 5.5 µA µA VGS = 0 V, VDS = 650 V DYNAMIC CHARACTERISTICS PARAMETER Output Capacitance CONDITIONS COSS VDS = 400 V, VGS = 0 V MIN TYP MAX UNIT 14 pF f = 100 kHz Output Charge Total Gate Charge 3 QOSS VDS = 400 V, VGS = 0 V 14 nC QG VDS = 400 V, VGS = 0...12 V 1.4 nC ID = 2.75 A, IG=15 mA 3 Reverse Recovery Charge QRR IS = 8 A, VDS = 400 V 0 nC Turn-on delay time td(on) See Figure 17 and Figure 18 5 ns Turn-off delay time td(off) See Figure 17 and Figure 18 13 ns Rise time tr See Figure 17 and Figure 18 4 ns Fall time tf See Figure 17 and Figure 18 4 ns Turn-on gate charge value is listed. Turn-off gate charge value is lower, because ICeGaN™ gate discharges the gate internally. www.camgandevices.com Issued 2022-12-23 05 !Sy CGD65B200S2 DATASHEET Datasheet 1.0 – December 2022 CURRENT SENSING Please refer to the application note CG-AN2206: Current Sensing with ICeGaN™. Please contact CGD for advice on the use of the current sense function. ESD RATING PARAMETER ESD withstand rating HBM CONDITIONS MIN Human Body Model 2000 TYP MAX UNIT V (per JEDEC JS-001-2017) Thermal Characteristics Typical values unless otherwise specified. PARAMETER CONDITIONS Thermal resistance, junction to case Rth(JC) Maximum reflow soldering temperature Treflow MSL 1 VALUE UNIT 2.5 °C/W 260 °C www.camgandevices.com Issued 2022-12-23 06 !Sy CGD65B200S2 DATASHEET Datasheet 1.0 – December 2022 Figures Figures at TJ = 25 °C, VDD = 12 V if not specified. Figure 3. Normalized thermal transient impedance (Zth,JC) as a function of pulse width. Figure 4. Safe Operating Area (SOA) based on thermal impedance Zth,JC at TCASE = 25 °C. Figure 5. Forward output characteristics at TJ = 25 °C. Figure 6. Forward output characteristic at TJ = 150 °C. Figure 7. Reverse output characteristics at TJ = 25 °C. Figure 8. Reverse output characteristics at TJ = 150 °C. www.camgandevices.com Issued 2022-12-23 07 !Sy CGD65B200S2 DATASHEET Datasheet 1.0 – December 2022 Figure 9. Drain leakage current characteristics at TJ = 25 °C and TJ = 150 °C. Figure 10. On-state resistance as a function of drain current at TJ = 25 °C. Figure 11. On-state resistance as a function of junction temperature at VGS = 12 V. Figure 12. Transfer characteristics at VDS = 0.1 V, TJ = 25 °C. Figure 13. Transfer characteristics at VDS = 0.1 V, TJ = 150 °C. www.camgandevices.com Issued 2022-12-23 08 !Sy CGD65B200S2 DATASHEET Datasheet 1.0 – December 2022 Figure 14. Typical output capacitance COSS vs. VDS at 100 kHz, TJ = 25 °C. Figure 15. Typical output charge QOSS vs. VDS at 100 kHz, TJ = 25 °C. Figure 16. Typical COSS stored energy EOSS vs. VDS at TJ = 25 °C. VDC Rg (on) Ga te Driver VD D D G Rg ( off) K CS S Figure 17. Inductive switching circuit. ID = 6 A, Rg(on) = 15 Ω, Rg(off) = 2 Ω, VDD = 12 V, VDC = 400 V, L = 125 µH, diode = IDH04G65C5. Figure 18. Switching waveform timing definitions. www.camgandevices.com Issued 2022-12-23 09 !Sy CGD65B200S2 DATASHEET Datasheet 1.0 – December 2022 VDC VDD IG VD D PWM switch D G K CS S Figure 19. QG gate charge characterization circuit. IG=15 mA, VDC = 400 V, VDD=12V, L = 125 µH, freewheeling diode = IDH04G65C5. Figure 20. QG gate charge characterisation waveform at IG = 15 mA and VDD = 12 V. Time intervals t1 and t2 indicate the integration boundaries to calculate QG from IG at turn-on and turn-off. Turn-off gate charge is lower than turn-on gate charge. www.camgandevices.com Issued 2022-12-23 10 !Sy CGD65B200S2 DATASHEET Datasheet 1.0 – December 2022 Packaging DFN 5x6 mm. PIN NUMBER NAME 1 Kelvin Source 2 Gate 3 Current Sense 4 VDD 5-8 Drain 9 Source Like any unwanted electronic device, CGD components should be recycled or otherwise disposed of in accordance with local laws and regulations. www.camgandevices.com Issued 2022-12-23 11 !Sy CGD65B200S2 DATASHEET Datasheet 1.0 – December 2022 Tape and Reel Information Version History This version is 1.0 VERSION 1.0 DESCRIPTION Initial Release DATE BY December 2022 MA, AB, JZ www.camgandevices.com Issued 2022-12-23 12 !Sy CGD65B200S2 DATASHEET Datasheet 1.0 – December 2022 Cambridge GaN Devices Limited Jeffreys Building, Suite 8 St John’s Innovation Park Cambridge CB4 0DS Disclaimer Information presented here by Cambridge GaN Devices Limited is believed to be correct and accurate. Cambridge GaN Devices Limited shall not be liable to any recipient or third part for any damages, including (but not limited to) personal injury, property damage, loss of profits, loss of business opportunity, loss of use, interruption of business, or indirect, special, incidental or consequential damages of any kind in connection with, or arising from, the use or performance of the data herein. No obligation or liability to the recipient or third part shall arise from Cambridge GaN Devices Limited providing technical or other services. CGD reserves the right to modify the products and/or specifications described herein at any time and at Cambridge GaN Devices’ sole discretion. All information in this document, including descriptions of product features or performance, is subject to change without notice. www.camgandevices.com Issued 2022-12-23 13 !Sy