GCMX080B120S1-E1

GCMX080B120S1-E1 VDS RDS,on ID (TC=25C) TJ,max 1200V SiC MOSFET Power Module Features 1200 V 77 mΩ 30 A 175°C Package • High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation Benefits (1) SG (Driver Source) • Low switching losses • Low junction to case thermal resistance • Very rugged and easy mount • Direct mounting to heatsink (isolated package) (2) G (Gate) (3) D (Drain) (4) S (Source) Applications Part # Package Marking GCMX080B120S1-E1 SOT-227 GCMX080B120S1-E1 • Photovoltaic Inverter • Battery charger • Server power supplies • Energy storage system Absolute Maximum Ratings Characteristics Drain-Source Voltage Symbol Vrated Operating & Storage Temperature Rev. 1.0, 2/4/2022 V 30 22 ISD TC=25°C, VGS=-5V 34 IDS,pulse TC=25°C, VGS=20V 80 Body Diode Drain Current Power Dissipation Unit 1200 TC=100°C, VGS=20V IDS Gate Source Voltage Values TC=25°C, VGS=20V Continuous Drain Current Pulsed Drain Current Conditions VGS=0V, ID=1μA VGSmax VGSop Ptot TJ, Tstorage -10/25 Recommended operational TC=25°C Continuous www.SemiQ.com -5/20 A V 142 W -55...175 °C p.1 GCMX080B120S1-E1 1200V SiC MOSFET Power Module Static Electrical Characteristics, at TJ=25°C, unless otherwise specified Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On-Resistance Transconductance Internal Gate Resistance Symbol BVDSS Conditions VGS=0V, ID=1mA Values min. typ. max. Unit 1200 - - VDS=1200V, VGS=0V - 0.1 1 VDS=1200V, VGS=0V, TJ=175°C - 1 - IGSS+ VGS=20V, VDS=0V - - 100 IGSS- VGS=-5V, VDS=0V - - -100 VGS=VDS, ID=10mA 2 2.8 4 VGS=VDS, ID=10mA, TJ=175°C - 2.0 - VGS=20V, ID=20A - 77 100 VGS=20V, ID=10A - 71 90 VGS=20V, ID=20A, TJ=125°C - 106 - VGS=20V, ID=20A, TJ=175oC VDS=20V, ID=20A - 134 - - 8.0 - S f=1MHz, VAC=25mV, D-S Short - 3.0 - Ω IDSS VGS(th) RDSon gfs RG(int) V µA nA V mΩ AC Electrical Characteristics, at TJ=25°C, unless otherwise specified Characteristics Symbol Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Coss Stored Energy EOSS* Turn-On Switching Energy EON Turn-Off Switching Energy EOFF Turn-On Delay Time tD(on) tR Rise Time Turn-Off Delay Time Conditions VGS=0V VDS=1000V f=200kHz VAC=25mV VDD=800V, IDS=20A, RG(ext)=2.5Ω, VGS=-5/+20V, L=975µH, FWD= GCMX080A120S1-E1 Values min. typ. max. - 1336 - - 73 - - 8 - - 41 - - 192 - - 40 - - 9 - - 4 - tD(off) - 15 - tF - 11 - QG - 58 - Gate to Source Charge QGS - 18 - Gate to Drain Charge QGD - 17 - VDD=800V, IDS=20A VGS=-5/20V pF µJ µJ Total Gate Charge Fall Time Unit ns nC *EOSS is calculated from COSS curve Freewheeling Diode Characteristics, at TJ=25°C, unless otherwise specified Characteristics Symbol Diode Forward Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR Peak Reverse Recovery Current IRRM Rev. 1.0, 2/4/2022 Conditions VGS=-5V, IS=10A IS=20A, VR=800V, VGS=-5V di/dt=7.9A/ns www.SemiQ.com Values min. typ. max. - 3.8 - Unit V - 8 - ns - 159 - nC - 29 - A p.2 GCMX080B120S1-E1 1200V SiC MOSFET Power Module Thermal and Package Characteristics, at Tj=25 °C, unless otherwise specified Characteristics Thermal resistance, junction-case Symbol Conditions RthJC Values min. typ. max. Unit °C/W - 0.83 1.06 Mounting torque Md M4-0.7 screws 1.1 - 1.5 Terminal connection torque Mdt M4-0.7 screws - 1.1 1.3 Package weight Wt - 32 - g 2500 - - V Isolation voltage VISOL IISOL < 1mA, 50/60 Hz, 1 min N-m Typical Performance Figure 1. Output Characteristics TJ = -55°C Rev. 1.0, 2/4/2022 Figure 2. Output Characteristics TJ = 25°C www.SemiQ.com p.3 GCMX080B120S1-E1 1200V SiC MOSFET Power Module Figure 3. Output Characteristics TJ = 125°C Figure 4. Output Characteristics TJ = 175°C Figure 5. Normalized On-Resistance vs. Temperature Figure 6. On-Resistance vs. Drain Current For Various Temperature Rev. 1.0, 2/4/2022 www.SemiQ.com p.4 GCMX080B120S1-E1 1200V SiC MOSFET Power Module Figure 7. On-Resistance vs. Temperature For Various Gate Voltages Figure 8. Transfer Characteristic for Various Junction Temperatures Figure 9. Freewheeling Diode Characteristics at TJ = -55°C Figure 10. Freewheeling Diode Characteristics at TJ = 25°C Rev. 1.0, 2/4/2022 www.SemiQ.com p.5 1200V SiC MOSFET Power Module GCMX080B120S1-E1 Figure 11. Freewheeling Diode Characteristics at TJ = 125°C Figure 12. Freewheeling Diode Characteristics at TJ = 175°C Figure 13. Threshold Voltage vs. Temperature Figure 14. Gate Charge Characteristics Rev. 1.0, 2/4/2022 www.SemiQ.com p.6 GCMX080B120S1-E1 1200V SiC MOSFET Power Module Figure 15. Output Capacitor Stored Energy Figure 16. Capacitance vs Drain-Source Voltage Figure 17. Continuous Drain Current Derating vs. Case Temperature Figure 18. Maximum Power Dissipation Derating vs Case Temperature Rev. 1.0, 2/4/2022 www.SemiQ.com p.7 GCMX080B120S1-E1 1200V SiC MOSFET Power Module Figure 19. Transient Thermal impedance (Junction to Case) Figure 20. Safe Operating Area Figure 21. Clamped Inductive Switching Energy vs. Drain Current Figure 22. Clamped Inductive Switching Energy vs. RG(ext) Rev. 1.0, 2/4/2022 www.SemiQ.com p.8 1200V SiC MOSFET Power Module GCMX080B120S1-E1 Figure 23. Clamped Inductive Switching Energy vs. Temperature Figure 24. Switching Times vs RG(ext) Figure 23. Switching Times vs. Drain Current Figure 24. dv/dt and di/dt vs. Drain Current Rev. 1.0, 2/4/2022 www.SemiQ.com p.9 1200V SiC MOSFET Power Module GCMX080B120S1-E1 Figure 25. dv/dt and di/dt vs. RG(ext) Figure 26. Turn-off Transient Definitions Figure 27. Turn-on Transient Definitions Figure 28. Reverse Recovery Definitions Rev. 1.0, 2/4/2022 www.SemiQ.com p.10 GCMX080B120S1-E1 1200V SiC MOSFET Power Module Package Dimensions SOT-227 Sym A B C D E F G H I J K L M N O P Q R S T U V W X Y Z Rev. 1.0, 2/4/2022 Millimeters Min Max 31.67 31.90 7.95 8.18 4.14 4.24 4.14 4.24 4.14 4.24 14.94 15.09 30.15 30.25 38.00 38.10 4.75 4.83 11.68 12.19 9.45 9.60 0.76 0.84 12.62 12.88 25.15 25.30 24.79 25.04 3.02 3.15 6.71 6.96 4.17 4.42 2.08 2.13 3.28 3.63 26.75 26.90 3.86 4.24 20.55 26.90 5.45 5.85 3.15 3.66 0.00 0.13 Inches Max Min 1.256 1.247 0.322 0.313 0.167 0.163 0.167 0.163 0.167 0.163 0.594 0.588 1.191 1.187 1.500 1.496 0.190 0.187 0.480 0.460 0.378 0.372 0.033 0.030 0.507 0.497 0.996 0.990 0.986 0.976 0.124 0.119 0.274 0.264 0.174 0.164 0.084 0.082 0.143 0.129 1.059 1.053 0.167 0.152 0.814 0.809 0.230 0.215 0.144 0.124 0.005 0.000 www.SemiQ.com p.11 1200V SiC MOSFET Power Module GCMX080B120S1-E1 Revision History Date 12/6/2021 2/4/2022 Revision 0.1 1.0 Notes Preliminary release Initial release Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com. REACh Compliance REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest, California to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold pursuant to SemiQ’s terms and conditions of sale in place at the time of order acknowledgement. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by SemiQ. Rev. 1.0, 2/4/2022 www.SemiQ.com p.12