C3M0075120K-A

C3M0075120K 1200V 75mohm Silicon Carbide Power MOSFET N-Channel Enhancement Mode Drain (Pin 1, TAB) Tab Drain Features • • • • • • • 3rd generation Silicon Carbide (SiC) MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Gate (Pin 4) Driver Source (Pin 3) 1 D Power Source (Pin 2) 2 3 4 S S G Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo. Part Number Package Marking C3M0075120K TO-247-4 C3M0075120K Applications Benefits • • • • • • • • • Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Maximum Ratings (TC = 25ºC unless otherwise specified) Parameter Symbol Value VDSmax 1200 Gate-Source Voltage (dynamic) VGSmax -8/+19 Gate-Source Voltage (static)2 VGSop -4/+15 Drain-Source Voltage 1 ID Pulsed Drain Current IDM 123 Power Dissipation PD 113.6 19.7 TJ, Tstg -55 to +150 Solder Temperature TS 260 Mounting Torque MS Test Conditions Note VGS = 0 V, ID = 100 μA V AC (ƒ >1 Hz) Note 1 Static 30 Continuous Drain Current Operating Junction and Storage Temperature Unit A VGS = 15 V, TC = 25ºC Fig. 19 VGS = 15 V, TC = 100ºC Note 2 Fig. 22 Note 2 Fig. 20 Pulse width tP limited by Tj max W °C 1 N-m 8.8 lbf-in TJ = 150ºC According to JEDEC J-STD-020 (M3 or 6-32 screw) Note: 1 Recommended turn-off/turn on gate voltage VGSmax = -4V...0V/+15V 2 Verified by design Rev. 06, August 2023 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power © 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. C3M0075120K 2 Electrical Characteristics (TC = 25˚C unless otherwise specified) Parameter Symbol Min. Typ. Max. Drain-Source Breakdown Voltage V(BR)DSS Gate Threshold Voltage VGS(th) 1200 — — 1.8 2.5 3.6 Unit Test Conditions VGS = 0 V, ID = 100 μA V VDS = VGS, ID = 5 mA, TJ=25°C Fig. 11 VDS = VGS, ID = 5 mA, TJ=150°C Fig.11 — 2.2 — Zero Gate Voltage Drain Current IDSS — 1 50 µA VDS = 1200 V, VGS = 0 V Gate-Source Leakage Current IGSS — 10 250 nA VGS = 15 V, VDS = 0 V — 75 90 — 100 — Drain-Source On-State Resistance RDS(on) mΩ 12 Transconductance gfs — Input Capacitance Ciss — 1390 — Output Capacitance Coss — 58 — Reverse Transfer Capacitance Crss — 2 — Output Capacitance Stored Energy Eoss — 33 — Turn-On Switching Energy (Body Diode FWD) Eon — 270 — Turn Off Switching Energy (Body Diode FWD) Eoff — 77 — Turn-On Delay Time td(on) — 30 — tr — 14 — td(off) — 38 — Rise Time Turn-Off Delay Time — 13 tf — 10 — — 9 — Effective Output Capacitance (Energy Related) RG(int) CO(er) — 67 — Effective Output Capacitance (Time Related) CO(tr) — 96 — Fall Time Internal Gate Resistance Gate to Source Charge Qgs — 17 — Gate to Drain Charge Qgd — 18 — Total Gate Charge Qg — 53 — Note S pF VGS = 15 V, ID = 20 A, TJ=150°C Fig. 4, 5, 6 Fig. 4, 5, 6 VDS = 20 V, IDS = 20 A, TJ=25°C Fig. 7 VDS = 20 V, IDS = 20 A, TJ=150°C Fig. 7 VGS = 0 V, VDS = 1000 V ƒ = 1 Mhz VAC = 25 mV Fig. 17, 18 VGS = 15 V, ID = 20 A, TJ=25°C Fig. 16 µJ VDS = 800 V, VGS = -4 V/15 V, ID = 20 A, RG(ext) = 0 Ω, L= 156 μH, TJ = 150ºC Fig. 26, 29 ns VDD = 800 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 0 Ω, Timing relative to VDS Inductive load Fig. 27, 28 Ω ƒ = 1 MHz, VAC = 25 mV pF VGS= 0V, VDS= 0...800V Note 3 nC VDS = 800 V, VGS = -4 V/15 V ID = 20 A Per IEC60747-8-4 pg 21 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Parameter Diode Forward Voltage Symbol VSD Typ. Max. 4.5 — 4.0 — Continuous Diode Forward Current IS — 26 Diode Pulse Current ISM — 123 Reverse Recovery Time trr 20 Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm Unit V Test Conditions Note VGS = -4 V, ISD = 10 A Fig. 8, 9, 10 VGS = -4 V, ISD = 10 A, TJ = 150ºC A VGS = -4 V, TJ = 25ºC — nS VGS = -4 V, pulse width tP limited by Tj max 254 — nC 18 — A VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 3600 A/µs, TJ = 150ºC Thermal Characteristics Parameter Thermal Resistance from Junction to Case Symbol Typ. Unit Note RθJC 1.1 °C/W Fig. 21 Note: 3 CO(er), a lumped capacitance that gives the same stored energy as Coss while Vds is rising from 0 to 800V CO(tr), a lumped capacitance that gives the same charging time as Coss while Vds is rising from 0 to 800V Rev. 06, August 2023 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power © 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. C3M0075120K 3 Typical Performance 80 VGS = 13V 60 50 VGS = 11V 40 30 20 Conditions: °C TJJ ==25 25ºC =