AS1M025120T

AS1M025120T N-Channel Silicon Carbide Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID@25℃ 1200V 34mΩ@20V 65A Feature Application  High Blocking Voltage With Low On-Resistance  Power Supplies  High Speed Switching With Low Capacitance  Switch Mode Power Supplies  Easy to Parallel and Simple to Drive  High Voltage DC/DC Converters  Motor Drivers  Pulsed Power Applications Package Marking Circuit diagram AS1M025120T XXXXX D TO-247-4 S2 S1 G Absolute maximum ratings (TC=25℃ unless otherwise noted) Parameter Symbol Test Condition Value Unit 1200 V Drain-Source Voltage VDSmax VGS = 0V, IDS =100µA Gate-Source Voltage VGSmax Absolute maximum values -10/+25 V Gate-Source Voltage VGSOP Recommended operational values -5/+20 V ID VGS = 20V,TC=25℃ 65 A ID VGS = 20V,TC=100℃ 43 A Pulsed Drain Current IDM Pule width tp limitea by Tjmax 200 A Power Dissipation PD TC=25℃,TJ=150℃ 370 W 0.25 ℃/W 40 ℃/W Continuous Drain Current Thermal Resistance RθJC Junction-to-Case Thermal Resistance RθJA Junction-to-Ambient Junction Temperature TJ -55 ~ +150 ℃ Storage Temperature TSTG -55~ +150 ℃ o Electrical characteristics (TC=25 C, unless otherwise noted) Page 1 Document ID Issued Date Revised Date Revision Page. AS-3270002 2013/03/08 2021/06/18 B 6 AS1M025120T N-Channel Silicon Carbide Power MOSFET Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, IDS =100µA Zero gate voltage drain current IDSS VDS =1200V,VGS = 0V 100 µA Gate-Source leakage current IGSS+ VGS =25V, VDS = 0V 250 nA Gate-Source leakage current IGSS- VGS =-10V, VDS = 0V 250 nA Gate threshold voltage VGS(th) Drain-source on-resistance RDS(on) VDS =VGS, IDS =15mA 1200 1.9 V 2.4 VDS =VGS, IDS =15mA ,TJ=150℃ 1.7 VGS =20V, ID =50A 25 VGS =20V, ID =50A,TJ=150℃ 43 4.0 34 V mΩ Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss COSS Stored Energy Eoss Turn-on Switching Energy Eon Turn-off Switching Energy Eoff Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time tr td(off) Turn-off fall time 4200 250 VDS =1000V,VGS =0V,f =1MHz VAC=25mV 16 126 µJ 1.8 VDS=800V,VGS=-5V/20V, ID =50A,RG(ext)=2.5Ω,L=412µH mJ 0.6 195 VDS =800V,VGS =-5V/20V, ID =50A 54 nC 29 15 VDS=800V,VGS=-5V/20V, ID =50A,RG(ext)=2.5Ω, RL=16Ω 12 nS 34 tf Internal Gate Resistance pF 7 RG f =1MHz, VAC=25mV Diode Forward Current IS TC=25℃ Diode Forward voltage VDS 2.1 Ω Source-Drain Diode characteristics Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm 98 VGS =-5V, IF=25A 3.5 VGS =-5V, IF=25A,TJ=150℃ 3.3 ISD=50A,VR=800V Page 2 A V 50 nS 216 nC 7.2 A Document ID Issued Date Revised Date Revision Page. AS-3270002 2013/03/08 2021/06/18 B 6 AS1M025120T N-Channel Silicon Carbide Power MOSFET Typical Characteristics Page 3 Document ID Issued Date Revised Date Revision Page. AS-3270002 2013/03/08 2021/06/18 B 6 AS1M025120T N-Channel Silicon Carbide Power MOSFET Typical Characteristics Page 4 Document ID Issued Date Revised Date Revision Page. AS-3270002 2013/03/08 2021/06/18 B 6 AS1M025120T N-Channel Silicon Carbide Power MOSFET Typical Characteristics Page 5 Document ID Issued Date Revised Date Revision Page. AS-3270002 2013/03/08 2021/06/18 B 6 AS1M025120T N-Channel Silicon Carbide Power MOSFET TO-247-4 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.800 5.250 0.189 0.207 A1 2.250 2.550 0.089 0.100 A2 1.900 2.200 0.075 0.087 b 1.050 1.350 0.041 0.053 b1 1.050 1.600 0.041 0.063 b2 2.350 2.950 0093 0.116 c 0.550 0.700 0.022 0.028 D 23.200 23.800 0.913 0.937 D1 16.250 17.650 0.640 0.695 D2 0.950 1.250 0.037 0.049 E 15.700 16.200 0.618 0.638 E1 13.000 14.200 0.512 0.559 E2 3.650 5.200 0.144 0.205 L 17.300 19.850 0.681 0.781 L1 3.950 4.450 0.156 0.175 Q 5.450 6.300 0.215 0.248 S 6.000 6.300 0.236 0.248 P 3.500 3.650 0.138 0.144 P1 7.180 BSC 0.283 BSC e 2.540 BSC 0.100 BSC e1 5.080 BSC 0.2000 BSC Page 6 Document ID Issued Date Revised Date Revision Page. AS-3270002 2013/03/08 2021/06/18 B 6