GP2T040A120H

GP2T040A120H VDS RDS,on ID (TC=25C) Tj,max 1200V SiC MOSFET Features 1200 V 37 mΩ 63 A 175°C Package • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 400mJ* • Driver source pin for gate driving (1) D (Drain) (2) S (Source) Benefits (3) S (Driver Source) • Lower capacitance • Higher system efficiency • Easy to parallel • Lower Switching Loss • Longer creepage distance (4) G (Gate) Applications • Solar Inverters • Switch mode power supplies, UPS • Induction heating and welding • EV charging stations • High voltage DC/DC converters • Motor drives Part # Package Marking GP2T040A120H TO-247-4L 2T040A120 Maximum Ratings, at Tj=25°C, unless otherwise specified Characteristics Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate Source Voltage Power Dissipation Operating & Storage Temperature Single Pulse Avalanche Energy Symbol Vrated ID ID,pulse* Conditions VGS=0V, IDS=1µA TC=25 °C, Tj=175 °C Ptot Tj, Tstorage EAS Unit 1200 V 63 TC=100 °C, Tj=175 °C 47 TC=25°C 160 A -10/25 VGSmax VGSop Values V Recommended operational TC=25°C -5/20 322 W Continuous L=1.0mH, IAS=28.3A, V=50V -55...175 °C 400 mJ Thermal Characteristics Characteristics Symbol Conditions Values min. typ. max. Thermal Resistance, Junction to Case RthJC - 0.38 0.47 Thermal Resistance, Junction to Ambient RthJA - - 40.0 Unit o C/W * Pulse width is limited by Tjmax Rev. 1.3, 7/18/2023 www.SemiQ.com p.1 GP2T040A120H 1200V SiC MOSFET Static Electrical Characteristics, at Tj=25°C, unless otherwise specified Characteristics min. 1200 Values typ. - max. - VDS=1200V, VGS=0V - 0.1 1.0 VDS=1200V, VGS=0V, Tj=175°C - 1 - IGSS+ VGS=20V, VDS=0V - -10 -100 Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Conditions IDS=1mA VGS=VDS, IDS=10mA Gate Threshold Voltage Drain-Source On-Resistance VGS(th) RDSon 1.8 2.4 4 VGS=VDS, IDS=10mA, Tj=125°C - 1.8 - VGS=VDS, IDS=10mA, Tj=175°C - 1.6 - VGS=20V, IDS=40A - 37 52 VGS=20V, IDS=20A - 35 45 VGS=20V, IDS=40A, Tj=125°C - 56 - Unit V µA nA V mΩ VGS=20V, IDS=40A, Tj=175°C - 73 Transconductance gfs VDS=20V, IDS=40A - 16 - S Gate Input Resistance RG f=1MHz, VAC=25mV, D-S Short - 1.9 - Ω min. - Values typ. 3192 max. - - 132 - - 7 - - 77 - VDD=800V, IDS=40A, RG(ext)=2.5, VGS=-5/+20V, L=273µH, FWD=GP2T040A120H - 446 - - 68 - - 514 - VDD=800V, IDS=40A, RG(ext)=2.5, VGS=-5/+20V, L=273µH, FWD=GP3D020A120A - 339 - - 70 - - 409 - - 14 - - 5 - - 23 - AC Electrical Characteristics, at Tj=25°C, unless otherwise specified Characteristics Symbol Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Coss Stored Energy EOSS Turn-On Switching Energy EON Turn-Off Switching Energy EOFF Total Switching Energy ETOT Turn-On Switching Energy EON Turn-Off Switching Energy EOFF Total Switching Energy ETOT Turn-On Delay Time tD(on) Rise Time tR Turn-Off Delay Time Fall Time tD(off) tF Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD Short-Circuit Withstand Time tSC Conditions VGS=0V, VDS=1000V, f=200kHz, VAC=25mV VDD=800V, IDS=40A, RG(ext)=2.5, VGS=-5/+20V, L=273µH, FWD=GP2T040A120H VDD=800V, IDS=20A, VGS=-5/+20V VDD=800V, VGS=20V - 14 - - 117 - - 51 - Unit pF µJ µJ µJ ns nC - 22 - - 4.1 - Values typ. - max. 74 3.8 - - 11 - ns - 316 - nC - 46 - A µs Body Diode Characteristics, at Tj=25°C, unless otherwise specified Characteristics Max Continuous Diode Fwd Current Diode Forward Voltage Symbol IS VGS=-5V, TC=25°C min. - VSD VGS=-5V, ISD=20A - Reverse Recovery Time tRR Reverse Recovery Charge QRR Peak Reverse Recovery Current IRRM Rev. 1.3, 7/18/2023 Conditions ISD=40A, VR=800V, VGS=-5V, diF/dt=9.6A/ns www.SemiQ.com Unit A V p.2 GP2T040A120H 1200V SiC MOSFET Typical Performance Figure 1. Output Characteristics Tj = -55°C Figure 2. Output Characteristics Tj = 25°C Figure 3. Output Characteristics Tj = 125°C Figure 4. Output Characteristics Tj = 175°C Rev. 1.3, 7/18/2023 www.SemiQ.com p.3 GP2T040A120H 1200V SiC MOSFET Figure 5. Normalized On-Resistance vs. Temperature Figure 6. On-Resistance vs. Drain Current For Various Temperature Figure 7. On-Resistance vs. Temperature For Various Gate Voltages Figure 8. Transfer Characteristic for Various Junction Temperatures Rev. 1.3, 7/18/2023 www.SemiQ.com p.4 GP2T040A120H 1200V SiC MOSFET Figure 9. Body Diode Characteristics at Tj = -55°C Figure 10. Body Diode Characteristics at Tj = 25°C Figure 11. Body Diode Characteristics at Tj = 175°C Figure 12. Threshold Voltage vs. Temperature Rev. 1.3, 7/18/2023 www.SemiQ.com p.5 GP2T040A120H 1200V SiC MOSFET Figure 13. Gate Charge Characteristics Figure 14. Output Capacitor Stored Energy Figure 15. Capacitance vs Drain-Source Voltage Figure 16. Continuous Drain Current Derating vs. Case Temperature Rev. 1.3, 7/18/2023 www.SemiQ.com p.6 GP2T040A120H 1200V SiC MOSFET Figure 17. Maximum Power Dissipation Derating vs Case Temperature Figure 18. Transient Thermal impedance (Junction to Case) Figure 19. Safe Operating Area Figure 20. Clamped Inductive Switching Energy vs. Drain Current Rev. 1.3, 7/18/2023 www.SemiQ.com p.7 GP2T040A120H 1200V SiC MOSFET Figure 21. Clamped Inductive Switching Energy vs. RG(ext) Figure 22. Clamped Inductive Switching Energy vs. Temperature Figure 23. Switching Times vs RG(ext) Figure 24. Turn-off Transient Definitions Rev. 1.3, 7/18/2023 www.SemiQ.com p.8 GP2T040A120H 1200V SiC MOSFET Figure 25. Turn-on Transient Definitions Figure 26. Reverse Recovery Definitions Package Dimensions TO-247-4L Sym A A1 A2 b b1 b3 b5 b7 c c1 D D1 D2 E E3 E4 e e1 L L1 L2 ØP ØP1 Q S Rev. 1.3, 7/18/2023 www.SemiQ.com Millimeters Min Max 4.83 5.21 2.29 2.54 1.91 2.16 1.07 1.33 2.39 2.94 1.07 1.60 2.39 2.69 1.30 1.70 0.55 0.68 0.55 0.65 23.30 23.60 16.25 17.65 0.95 1.25 15.75 16.13 1.00 1.90 12.38 13.43 2.54 BSC 5.08 BSC 17.31 17.82 3.97 4.37 2.35 2.65 3.51 3.65 7.19 REF 5.49 6.00 6.04 6.30 Inches Min Max 0.190 0.205 0.090 0.100 0.075 0.085 0.042 0.052 0.094 0.116 0.042 0.063 0.094 0.106 0.051 0.067 0.022 0.027 0.022 0.026 0.917 0.929 0.640 0.695 0.037 0.049 0.620 0.635 0.039 0.075 0.487 0.529 0.100 BSC 0.200 BSC 0.681 0.702 0.156 0.172 0.093 0.104 0.138 0.144 0.283 REF 0.216 0.236 0.238 0.248 p.9 GP2T040A120H 1200V SiC MOSFET Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com. REACh Compliance REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest, California to insure you get the most up-todate REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold pursuant to SemiQ’s terms and conditions of sale in place at the time of order acknowledgement. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by SemiQ. SemiQ reserves the right to make changes, corrections, modifications, and improvements of datasheet without notice. Rev. 1.3, 7/18/2023 www.SemiQ.com p.10