IV1Q12160T4

Sep. 2020 IV1Q12160T4 – 1200V 160mΩ SiC MOSFET Package: Features: ⚫ ⚫ ⚫ ⚫ ⚫ High blocking voltage with low on-resistance High speed switching with low capacitance High operating junction temperature capability Very fast and robust intrinsic body diode Kelvin gate input easing driver circuit design Applications: ⚫ ⚫ ⚫ ⚫ ⚫ Solar inverters UPS Motor drivers High voltage DC/DC converters Switch mode power supplies Part Number Package IV1Q12160T4 TO247-4 Absolute Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDS Drain-Source voltage 1200 V VGS=0V, ID=100μA VGS Gate-Source voltage -5 to 20 V Recommended maximum 20 A VGS=20V, TC=25°C 16 A VGS=20V, TC=100°C Note ID Drain current (continuous) IDM Drain current (pulsed) 50 A Pulse width limited by SOA Fig. 24 PTOT Total power dissipation 138 W TC=25°C Fig. 22 Tstg Storage temperature range -55 to 175 °C TJ Operating junction temperature -55 to 175 °C TL Solder Temperature 260 °C Fig. 21 Wave soldering only allowed at leads, 1.6mm from case for 10 s Thermal Data Symbol Rθ(J-C) Parameter Thermal Resistance from Junction to Case www.inventchip.com.cn Value Unit Note 1.088 °C/W Fig. 23 Rev1.0 Sep. 2020 Electrical Characteristics (TC=25°C unless otherwise specified) Symbol Value Parameter Min. Unit Typ. Max. Test Conditions IDSS Zero gate voltage drain current 5 100 μA VDS=1200V, VGS=0V IGSS Gate leakage current 1 +100 nA VDS=0V, VGS=-5~20V V VGS=VDS, ID=1.9mA VTH Gate threshold voltage 2.9 RON Static drain-source onresistance VGS=VDS, ID=1.9mA @ TC=175°C 1.9 mΩ VGS=20V, ID=10A @TJ=25°C 250 mΩ VGS=20V, ID=10A @TJ=175°C 160 195 Ciss Input capacitance 885 pF Coss Output capacitance 38 pF Crss Reverse transfer capacitance 2 pF Eoss Coss stored energy 16 μJ Qg Total gate charge 43 nC Qgs Gate-source charge 9 nC Qgd Gate-drain charge 19 nC Rg Gate input resistance 9.5 Ω EON Turn-on switching energy 139.3 μJ EOFF Turn-off switching energy 39.2 μJ td(on) Turn-on delay time 6.4 Rise time 19.4 Turn-off delay time 11.8 tr td(off) tf Fall time www.inventchip.com.cn ns VDS=800V, VGS=0V, f=1MHZ, VAC=25mV Note Fig. 8, 9 Fig. 4, 5, 6, 7 Fig. 16 Fig. 17 VDS=800V, ID=10A, VGS=-5 to 20V Fig. 18 f=1MHZ VDS=800V, ID=10A, VGS=-2 to 20V, RG(ext)=5.1Ω, L=450μH Fig. 19, 20 14 Rev1.0 Sep. 2020 Reverse Diode Characteristics (TC=25°C unless otherwise specified) Symbol Value Parameter Min. Typ. 4.1 Unit Note Max. V ISD=5A, VGS=0V 3.7 V ISD=5A, VGS=0V, TJ=175°C VSD Diode forward voltage trr Reverse recovery time 33.2 ns Qrr Reverse recovery charge 101.5 nC IRRM Peak reverse recovery current 5.6 A www.inventchip.com.cn Test Conditions Fig. 10, 11, 12 VGS=-2V/+20V, ISD=10A, VR=800V, di/dt=1000A/us, RG(ext)=13.0Ω Rev1.0 Sep. 2020 Typical Performance (curves) Fig. 1 Output Curve @ TJ=-55°C Fig. 2 Output Curve @ TJ=25°C Fig. 3 Output Curve @ TJ=175°C Fig. 4 Ron vs. Temperature Fig. 5 Normalized Ron vs. Temperature Fig. 6 Ron vs. IDS @ Various Temperature www.inventchip.com.cn Rev1.0 Sep. 2020 Fig. 7 Ron vs. Temperature @ Various VGS Fig. 8 Transfer Curves @ Various Temperature Fig. 9 Threshold Voltage vs. Temperature Fig. 10 Body Diode Curves @ TJ=-55°C Fig. 11 Body Diode Curves @ TJ=25°C Fig. 12 Body Diode Curves @ TJ=175°C www.inventchip.com.cn Rev1.0 Sep. 2020 rd Fig. 13 3 Quadrant Curves @ TJ=-55°C rd rd Fig. 14 3 Quadrant Curves @ TJ=25°C Fig. 15 3 Quadrant Curves @ TJ=175°C Fig. 16 Capacitance vs. VDS Fig. 17 Output Capacitor Stored Energy Fig. 18 Gate Charge Characteristics www.inventchip.com.cn Rev1.0 Sep. 2020 Fig. 19 Switching Energy vs. RG(ext) Fig. 21 Continuous Drain Current vs. Case Temperature Fig. 23 Thermal Impedance www.inventchip.com.cn Fig. 20 Switching Times vs. RG(ext) Fig. 22 Max. Power Dissipation Derating vs. Case Temperature Fig. 24 Safe Operating Area Rev1.0 Sep. 2020 Package Dimensions Note: 1. Package Reference: JEDEC TO247, Variation AD 2. All Dimensions are in mm 3. Slot Required, Notch May Be Rounded 4. Dimension D&E Do Not Include Mold Flash www.inventchip.com.cn Rev1.0 Sep. 2020 Notes Current revision is preliminary one, for further information please contact IVCT’s Office. Copyright©2020 InventChip Technology Co., Ltd. All rights reserved. Related Links http://www.inventchip.com.cn www.inventchip.com.cn Rev1.0