G12P10KE

G12P10KE P-Channel Enhancement Mode Power MOSFET Description The G12P10KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) RDS(ON) (at VGS = -4.5V) 100% Avalanche Tested -100V -12A < 200mΩ < 250mΩ Schematic diagram l RoHS Compliant l ESD (HBM)>7.0KV Application l Power switch l DC/DC converters TO-252 Ordering Information Device Package Marking Packaging G12P10KE TO-252 G12P10 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -100 V ID -12 A IDM -48 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 44.6 W EAS 25 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 55 ºC/W Maximum Junction-to-Case RthJC 2.8 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1460-V1.2) G12P10KE Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -100 -- -- V IDSS VDS = -100V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±10 uA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.0 -1.7 -3.0 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -6A -- 178 200 VGS = -4.5V, ID = -6A -- 192 250 Forward Transconductance gFS VDS = -15V,ID = -6A -- 12 -- -- 1652 -- -- 42 -- -- 41 -- -- 33 -- -- 4 -- -- 7 -- -- 52 -- -- 12 -- -- 38 -- -- 28 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -50V, f = 1.0MHz VDD = -50V, ID = -6A, VGS = -10V VDD = -50V, ID = -6A, RG = 9Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -12 A Body Diode Voltage VSD TJ = 25ºC, ISD = -6A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 35 -- nC Reverse Recovery Time Trr -- 46 -- ns IF = -6A, VGS = 0V di/dt=-500A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1460-V1.2) G12P10KE Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1460-V1.2) G12P10KE Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics -ID, Drain Current (A) 9 8 10 -4.5V -10V -5.5V 7 -3.5V 6 5 4 VGS=-3.3V 3 2 8 7 6 5 25℃ 4 3 2 1 1 0 VDS= -5V 9 -4V -ID, Drain Current (A) 10 Figure 2. Transfer Characteristics 0 1 2 3 0 4 0 -VDS, Drain-to-Source Voltage (V) -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 250 VGS= -4.5V VGS= -10V 100 50 0 0 2 4 6 8 10 VDD = -50V ID = -6A 8 6 4 2 0 10 20 30 40 -Is, Reverse Drain Current (A) Capacitance(pF) 6 Figure 6. Source-Drain Diode Forward 2500 Ciss 1500 1000 0 5 Qg Gate Charge（nC） Figure 5. Capacitance 500 4 10 0 12 -ID-Drain Current (A) 2000 3 Figure 4. Gate Charge 300 150 2 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 200 1 Coss Crss 0 10 20 30 40 50 60 -VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1460-V1.2) G12P10KE Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area VGS = -10V ID = -6A -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1460-V1.2) G12P10KE TO-252 Package Information E c H D D1 L5 L3 b3 E1 L4 A2 b θ L A1 L2 A e (L1) COMMON DIMENSIONS SYMBOL mm MIN NOM MAX 2.20 2.30 2.40 0.00 - 0.20 A2 0.97 1.07 1.17 A A1 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 E1 4.63 e 6.60 - 6.80 - 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 L2 L3 L4 L5 θ www.gofordsemi.com 2.90REF 0.51BSC 0.88 - 1.28 0.50 - 1.00 1.65 1.80 1.95 - 8° 0° TEL：0755-29961263 FAX:0755-29961466(A1460-V1.2)