G12P06K

G12P06K P-Channel Enhancement Mode Power MOSFET Description The G12P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) RDS(ON) (at VGS = -4.5V) 100% Avalanche Tested -60V -12A < 70mΩ < 85mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Ordering Information Device Package Marking Packaging G12P06K TO-252 G12P06 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -60 V ID -12 A IDM -48 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 27 W EAS 25 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 4.63 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1431-V1.1) G12P06K Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -60 -- -- V IDSS VDS = -60V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.0 -1.7 -3.0 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -6A -- 57 70 VGS = -4.5V, ID = -5A -- 69 85 Forward Transconductance gFS VDS = -5V,ID = -6A -- 15 -- -- 1322 -- -- 66 -- -- 61 -- -- 23 -- -- 4 -- -- 5 -- -- 8 -- -- 4 -- -- 32 -- -- 7 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -30V, f = 1.0MHz VDD = -30V, ID = -6A, VGS = -10V VDD = -30V, ID = -6A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -12 A Body Diode Voltage VSD TJ = 25ºC, ISD = -6A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 31 -- nC Reverse Recovery Time Trr -- 25 -- ns IF = -6A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω The table shows the minimum avalanche energy, which is 64mJ when the device is tested until failure 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1431-V1.1) G12P06K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1431-V1.1) G12P06K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 25 25 20 -3.6V 15 -3.3V 10 -3V 5 VGS =-2.5V 0 0 1 2 3 -ID, Drain Current (A) -ID, Drain Current (A) VDS = -5V -4.5V -10V 20 15 25℃ 10 5 0 4 0 -VDS, Drain-to-Source Voltage (V) 2 -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 90 80 VGS = -4.5V 60 50 VGS = -10V 30 20 0 2 4 6 8 10 8 Figure 4. Gate Charge 100 40 6 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 70 4 10 8 6 4 2 0 12 -ID-Drain Current (A) VDD = -30V, ID = -6A 0 5 10 15 20 25 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward -Is, Reverse Drain Current (A) 2000 1800 Capacitance(pF) 1600 Ciss 1400 1200 1000 800 600 400 200 0 Coss Crss 0 10 20 30 40 50 60 -VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1431-V1.1) G12P06K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area VGS = -10V, ID = -6A VGS = -4.5V, ID = -5A -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ(MAX)=150℃ TC=25℃ TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1431-V1.1) G12P06K TO-252 Package Information E c H D D1 L5 L3 b3 E1 L4 A2 b θ L A1 L2 A e (L1) COMMON DIMENSIONS SYMBOL A A1 mm MIN NOM MAX 2.20 2.30 2.40 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 E1 4.63 e 6.60 - 6.80 - 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 L2 L3 L4 L5 θ www.gofordsemi.com 2.90REF 0.51BSC 0.88 - 1.28 0.50 - 1.00 1.65 1.80 1.95 - 8° 0° TEL：0755-29961263 FAX:0755-29961466(A1431-V1.1)