G110N06K

G110N06K N-Channel Enhancement Mode Power MOSFET Description The G110N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested < < 60V 110A 6.4mΩ 8.4mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Ordering Information Device Package Marking Packaging G110N06K TO-252 G110N06 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 60 V ID 110 A IDM 440 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 160 W EAS 156 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 60 ºC/W Maximum Junction-to-Case RthJC 0.78 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1416-V1.1) G110N06K Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 60 -- -- V IDSS VDS = 60V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.8 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A -- 5.0 6.4 VGS = 4.5V, ID = 20A -- 6.0 8.4 Forward Transconductance gFS VGS = 5V, ID = 20A -- 20 -- -- 6469 -- -- 334 -- -- 306 -- -- 122 -- -- 17 -- -- 27 -- -- 15 -- -- 13 -- -- 32 -- -- 27 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 30V, f = 1.0MHz VDD = 30V, ID = 20A, VGS = 10V VDD = 30V, ID = 20A, RG = 2.5Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 110 A Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 59 -- nC Reverse Recovery Time Trr IF = 20A, VGS = 0V di/dt=100A/us -- 56 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1416-V1.1) G110N06K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1416-V1.1) G110N06K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 5V 5.5V 100 ID, Drain Current (A) 120 10V VDS= 5V 4.5V ID, Drain Current (A) 120 Figure 2. Transfer Characteristics 4V 80 60 40 VGS= 3.5V 80 60 25℃ 40 20 20 0 100 0 1 2 3 0 4 0 VDS, Drain-to-Source Voltage (V) 2 Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） 8 VGS= 4.5V VGS= 10V 2 0 0 10 20 30 8 Figure 4. Gate Charge 10 4 6 VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance 6 4 10 8 6 4 2 0 40 ID-Drain Current（A） VDD = 30V ID = 20A 0 25 50 75 100 125 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Ciss 7000 Capacitance(pF) Is, Reverse Drain Current (A) 8000 6000 5000 4000 3000 2000 Coss 1000 0 Crss 0 10 20 30 40 50 60 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1416-V1.1) G110N06K Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V ID = 20A VGS = 4.5V ID = 20A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 0.78°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1416-V1.1) G110N06K TO-252 Package Information E c H D D1 L5 L3 b3 E1 L4 A2 b θ L A1 L2 A e (L1) COMMON DIMENSIONS SYMBOL mm MIN NOM MAX 2.30 2.40 A 2.20 A1 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 E1 4.63 e 6.60 - 6.80 - 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 L2 2.90REF 0.51BSC L3 0.88 - 1.28 L4 0.50 - 1.00 L5 1.65 1.80 1.95 - 8° θ www.gofordsemi.com 0° TEL：0755-29961263 FAX:0755-29961466(A1416-V1.1)