GT100N12K

GT100N12K N-Channel Enhancement Mode Power MOSFET Description The GT100N12K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ 100% Avalanche Tested 120V 65A < 12mΩ Schematic Diagram ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters TO-252 Ordering Information Device Package Marking Packaging GT1 0 0 N1 2K TO- 252 GT100N12 2500pcs/ Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Symbol Value Unit V DS 120 V ID 65 A IDM 260 A V GS ±20 V PD 75 W TJ , Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 46 ºC/W Maximum Junction-to-Case RthJC 1.67 ºC/W Parameter Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1320) GT100N12K Specifications TJ = 25ºC, unless otherwise noted Symbol Test Conditions Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Parameter Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 120 -- -- V IDSS VDS = 120V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250µA 2.5 3 3.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 35A -- 9.5 12 mΩ Forward Transconductance gFS VDS = 5V,ID = 35A -- 46 -- S -- 2911 -- -- 329 -- -- 11 -- -- 50 -- -- 17 -- -- 15 -- -- 15 -- -- 10 -- -- 34 -- -- 8 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time Turn-off Delay Time tr td(off) Turn-off Fall Time VGS = 0V, VDS = 60V, f = 1.0MHz VDS = 60V, ID = 35A, VGS = 10V VDD = 60V, ID = 35A, RG = 1.6Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current Body Diode Voltage IS TC = 25ºC -- -- 65 A V SD TJ = 25ºC, ISD = 35A, VGS = 0V -- -- 1.2 V -- 106 -- nC -- 60 -- ns Reverse Recovery Charge Qrr Reverse Recovery Time Trr IF = 35A, VGS = 0V di/dt=100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1320) GT100N12K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1320) GT100N12K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 120 120 10V VDS= 5V 6.5V 6V 80 ID, Drain Current (A) ID, Drain Current (A) 100 5.5V 60 5V 40 20 0 1 2 80 60 25℃ 40 20 VGS=4.5V 0 100 3 0 4 0 VDS, Drain-to-Source Voltage (V) Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 16 14 12 VGS= 10V 8 6 4 0 10 20 30 Coss 1500 1000 500 0 Crss 0 10 10 VDD = 60V ID =35A 8 6 4 2 0 10 20 30 40 50 60 Is, Reverse Drain Current (A) Capacitance(pF) Ciss 2000 10 Figure 6. Source-Drain Diode Forward 4000 2500 8 Qg Gate Charge（nC） Figure 5. Capacitance 3000 6 Figure 4. Gate Charge 0 40 ID-Drain Current (A) 3500 4 VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 10 2 20 30 40 50 60 VDs Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1320) GT100N12K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area VGS=10V ID=35A ID=35A ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance 1.67°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1320) GT100N12K TO-252 Package Information Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 L5 θ www.gofordsemi.com MIN. 2.2 0 0.97 0.68 5.2 0.43 5.98 6.4 4.63 9.4 1.38 0.88 0.5 1.65 0° Dimensions in Millimeters NOM. 2.3 　 1.07 0.78 5.33 0.53 6.1 5.30REF 6.6 　 2.286BSC 10.1 1.5 2.90REF 0.51BSC 　 　 1.8 　 TEL：0755-29961263 MAX. 2.4 0.2 1.17 0.9 5.5 0.63 6.22 6.8 　 10.5 1.75 1.28 1 1.95 8° FAX:0755-29961466(A1320)