UMW
R
STD30NF06
60V N-Channel Enhancement Mode Power MOSFET
General Description
The STD30NF06 uses advanced trench technology and
design to provide excellent R DS(ON) wi th low gate charge.
It can be used in a wide variety of applications.
Features
VDS = 60V,ID =30A
RDS(ON),23mΩ(Typ) @ VGS =10V
RDS(ON),29mΩ(Typ) @ VGS =4.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
Lead free product is acquired
Application
Load Switch
PWM Application
Power management
Absolute Maximum Ratings(TA=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
30
A
20
A
Drain Current-ContinuousNote3
TC=25℃
TC=100℃
ID
Drain Current-Pulsed
IDM
120
A
Avalanche EnergyNote4
EAS
72
mJ
PD
55
W
TSTG
-55 to +150
℃
TJ
-55 to +150
℃
Note1
Maximum Power Dissipation
TC=25℃
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance
Parameter
Symbol
Min.
Typ.
Max
Unit
RθJC
-
-
2.7
℃/W
Thermal Resistance,Junction-to-Case
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友台半导体有限公司
UMW
R
STD30NF06
60V N-Channel Enhancement Mode Power MOSFET
Electrical Characteristics(TJ=25℃ unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,IDS=250uA
60
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
-
-
1
uA
Gate-Body Leakage
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Symbol
Conditions
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
VGS(TH)
VDS=VGS,IDS=250uA
1.0
1.6
2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V,IDS=15A
-
23
29
mΩ
VGS=4.5V,IDS=10A
-
29
40
mΩ
Conditions
Min.
Typ.
Max.
Unit
-
1562
-
-
75.4
-
-
66.8
-
Min.
Typ.
Max.
-
7.5
-
-
21
-
-
16
-
-
23.5
-
-
25
-
-
4.5
-
-
6.5
-
ON CHARACTERISTICS
Parameter
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Input Capacitance
CiSS
Output Capacitance
COSS
Reverse Transfer Capacitance
Crss
VDS =25V, VGS = 0V,
f=1MHz
pF
SWITCHING CHARACTERISTICS
Parameter
Turn-On Delay Time
Rise Time
Symbol
Conditions
Td(on)
VGS=10V,VDs=30V,
tr
Turn-Off Delay Time
Fall Time
RGEN=1.8Ω
Td(off)
ID=15A
tf
Total Gate Charge at 10V
Qg
Gate to Source Gate Charge
Qgs
Gate to Drain“Miller”Charge
Qgd
VDS=30V,IDS=15A,
VGS=10V
Unit
ns
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
VSD
VGS=0V,IDS=15A
-
-
1.2
V
Reverse Recovery Time
trr
TJ=25℃,IF=15A
-
29
-
nS
Reverse Recovery Charge
Qrr
di/dt=100A/us
-
45
-
nC
Drain-Source Diode Forward Voltage
Notes:
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: EAS condition: L=0.5mH,VDD=30V,VG=10V,VGATE=60V,Start TJ=25℃.
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友台半导体有限公司
UMW
R
www.umw-ic.com
STD30NF06
60V N-Channel Enhancement Mode Power MOSFET
3
友台半导体有限公司
UMW
R
www.umw-ic.com
STD30NF06
60V N-Channel Enhancement Mode Power MOSFET
4
友台半导体有限公司
UMW
R
www.umw-ic.com
STD30NF06
60V N-Channel Enhancement Mode Power MOSFET
5
友台半导体有限公司
UMW
R
STD30NF06
60V N-Channel Enhancement Mode Power MOSFET
Package Mechanical Data TO-252
E
A
B2
Dimensions
C2
L
V1
Ref.
Millimeters
H
D
Min.
C
B
G
V2
D1
V1
E1
A2
V1
L2
Min.
Typ.
Max.
A
2.10
2.50
0.083
0.098
0
0.10
0
0.004
B
0.66
0.86
0.026
0.034
B2
5.18
5.48
0.202
0.216
C
0.40
0.60
0.016
0.024
C2
0.44
0.58
0.017
0.023
D
5.90
6.30
0.232
5.30REF
E
6.40
E1
4.63
0.248
0.209REF
6.80
0.252
0.268
0.182
G
4.47
4.67
0.176
0.184
H
9.50
10.70
0.374
0.421
L
1.09
1.21
0.043
0.048
L2
1.35
1.65
0.053
0.065
7°
V1
DETAIL A
Inches
Max.
A2
D1
DETAIL A
Typ.
V2
0°
7°
6°
0°
6°
Ordering information
Order code
UMW STD30NF06L
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Package
Baseqty
Delivery mode
TO-252
2500
Tape and reel
6
友台半导体有限公司
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