STD15NF10L

UMW R STD15NF10 100V N-Channel Enhancement Mode MOSFET Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Fea VDS = 100V ID = 20A RDS(ON) < 75mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 20 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 10 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 5 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 3.4 A IDM Pulsed Drain Current2 30 A EAS Single Pulse Avalanche Energy3 36.5 mJ IAS Avalanche Current PD@TC=25℃ PD@TA=25℃ 15 A Total Power Dissipation4 34.7 W Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 62 ℃/W 2.4 ℃/W RθJC www.umw-ic.com Thermal Resistance Junction-Case1 1 友台半导体有限公司 UMW R STD15NF10 100V N-Channel Enhancement Mode MOSFET Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient On-Resistance2 Conditions Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=20A --- 65 75 VGS=0V , ID=250uA RDS(ON) VGS(th) Static Drain-Source Gate Threshold Voltage VGS=4.5V , ID=15A --1.0 85 --- 90 2.5 mΩ V △VGS(th) VGS(th) Temperature Coefficient ----- -4.75 --- --10 mV/℃ IDSS Drain-Source Leakage Current VGS=VDS , ID =250uA VDS=80V , VGS=0V , TJ=25℃ VDS=80V , VGS=0V , TJ=55℃ --- --- 100 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 28.7 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.6 3.2 Ω Qg Total Gate Charge (10V) --- 26.2 --- Qgs Gate-Source Charge --- 4.6 --- Qgd Gate-Drain Charge --- 5.1 --- Td(on) Turn-On Delay Time --- 4.2 --- Tr VDS=80V , VGS=10V , ID=20A uA nC Rise Time VDD=50V , VGS=10V , RG=3.3 --- 8.2 --- Turn-Off Delay Time ID=20A --- 35.6 --- Fall Time --- 9.6 --- Ciss Input Capacitance --- 1535 --- Coss Output Capacitance --- 60 --- Crss Reverse Transfer Capacitance --- 37 --- --- --- 22 A --- --- 45 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V IF=20A , dI/dt=100A/µs , TJ=25℃ --- 30 --- nS --- 37 --- nC Td(off) Tf IS ISM VSD Continuous Source VDS=15V , VGS=0V , f=1MHz Current1,5 Pulsed Source Current2,5 Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current ns pF Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=27A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.umw-ic.com 2 友台半导体有限公司 UMW R STD15NF10 100V N-Channel Enhancement Mode MOSFET Typical Characteristics 37.0 55 ID= 1 2 A VGS=10V 44 36.5 RD S O N( m Ω ) ID Drain Current (A) VGS=7V VGS=5V 33 36.0 VGS=4.5V 35.5 22 35.0 VGS=3V 11 34.5 34.0 4 0 0 1 2 3 4 5 VDS , Drain-to-Source Voltage (V) 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 12 IS Source Current(A) 10 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 Normalized On Resistance VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse diode 2.5 1.8 2.0 1.4 Normalized VGS(th) (V) Fig.4 Gate-Charge Characteristics 1.5 1 0.6 1.0 0.2 -50 0 50 100 0.5 -50 150 Fig.5 Normalized VGS(th) vs. TJ www.umw-ic.com 0 50 100 150 e ra ture ( TJ , J u n c t i o n T e m p℃) TJ ,Junction Temperature (℃ ) Fig.6 Normalized RDSON vs. TJ 3 友台半导体有限公司 UMW R STD15NF10 100V N-Channel Enhancement Mode MOSFET 10000 100.00 F=1.0MHz 100us 10.00 1000 1ms -ID (A) Capacitance (pF) Ciss 10ms 100ms DC 1.00 Coss 100 Crss 0.10 Tc=25o C Single Pulse 10 1 5 9 13 17 21 0.01 25 0.1 VDS , Drain to Source Voltage (V) Fig.7 Capacitance 1 10 100 -VDS (V) 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.11 Unclamped Inductive Switching Waveform Fig.10 Switching Time Waveform www.umw-ic.com 4 友台半导体有限公司 UMW R STD15NF10 100V N-Channel Enhancement Mode MOSFET Package Mechanical Data TO-252 E A B2 Dimensions C2 L V1 Ref. Millimeters H D Min. C B G V2 D1 V1 E1 A2 V1 L2 Min. Typ. Max. A 2.10 2.50 0.083 0.098 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 5.30REF E 6.40 E1 4.63 0.248 0.209REF 6.80 0.252 0.268 0.182 G 4.47 4.67 0.176 0.184 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.065 7° V1 DETAIL A Inches Max. A2 D1 DETAIL A Typ. V2 0° 7° 6° 0° 6° Ordering information Order code UMW STD15NF10L www.umw-ic.com Package Baseqty Delivery mode TO-252 2500 Tape and reel 5 友台半导体有限公司