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GT10N10

GT10N10

  • 厂商:

    GOFORD(谷峰)

  • 封装:

    TO-252(DPAK)

  • 描述:

    表面贴装型 N 通道 100 V 7A(Tc) 17W(Tc) TO-252

  • 数据手册
  • 价格&库存
GT10N10 数据手册
GT10N10 N-Channel Enhancement Mode Power MOSFET Description The GT10N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested 100V 7A < 140mΩ < 175mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Ordering Information Device Package Marking Packaging GT10N10 TO-252 GT10N10 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 100 V ID 7 A IDM 21 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 17 W TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 7.4 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 GT10N10 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 100 -- -- V IDSS VDS = 100V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.5 2 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 3.5A -- 115 140 VGS = 4.5V, ID = 3.5A -- 150 175 Forward Transconductance gFS VGS = 15V, ID = 2A 3 -- -- -- 206 -- -- 28.9 -- -- 1.4 -- -- 4.3 -- -- 1.5 -- -- 1.1 -- -- 14.7 -- -- 3.5 -- -- 20.9 -- -- 2.7 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 50V, f = 1.0MHz VDD = 50V, ID = 3.5A, VGS = 10V VDD = 50V, ID = 3.5A, RG = 2Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 7 A Body Diode Voltage VSD TJ = 25ºC, ISD = 3.5A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 52 -- nC Reverse Recovery Time Trr IF = 3.5A, VGS = 0V di/dt=500A/us -- 16 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 GT10N10 Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 GT10N10 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics ID, Drain Current (A) ID, Drain Current (A) Figure 1. Output Characteristics VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 4. Gate Charge RDS(on),On-Resistance(mΩ) Vgs Gate-Source Voltage(V) Figure 3. Drain Source On Resistance ID-Drain Current(A) VDD = 50V, ID = 3.5A Qg Gate Charge(nC) Figure 6. Source-Drain Diode Forward Capacitance(pF) Is, Reverse Drain Current (A) Figure 5. Capacitance VDS Drain-Source Voltage(V) www.gofordsemi.com TEL:0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 GT10N10 Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V, ID = 3.5A VGS = 4.5V ID = 3.5A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 7.4°C/W Pulse Width (s) www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 GT10N10 H D D1 L5 L3 TO-252 Package Information E1 L4 A2 b θ L A1 L2 A e (L1) COMMON DIMENSIONS SYMBOL mm MIN NOM MAX 2.20 2.30 2.40 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 A A1 D1 5.30REF E 6.40 6.60 E1 4.63 - e 9.40 L 1.38 L1 L2 L4 L5 θ www.gofordsemi.com - 2.286BSC H L3 6.80 10.10 10.50 1.50 1.75 2.90REF 0.51BSC 0.88 - 1.28 0.50 - 1.00 1.65 1.80 1.95 - 8° 0° TEL:0755-29961263 FAX:0755-29961466
GT10N10 价格&库存

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GT10N10
  •  国内价格
  • 5+1.07871
  • 50+0.85968
  • 150+0.76572
  • 500+0.64865

库存:629

GT10N10
    •  国内价格
    • 1+1.94790

    库存:10