GT10N10
N-Channel Enhancement Mode Power MOSFET
Description
The GT10N10 uses advanced trench technology to provide
excellent RDS(ON) , low gate charge. It can be used in a wide
variety of applications.
General Features
l
l
l
l
l
VDS
ID (at VGS = 10V)
RDS(ON) (at VGS = 10V)
RDS(ON) (at VGS = 4.5V)
100% Avalanche Tested
100V
7A
< 140mΩ
< 175mΩ
Schematic diagram
l RoHS Compliant
Application
l Power switch
l DC/DC converters
TO-252
Ordering Information
Device
Package
Marking
Packaging
GT10N10
TO-252
GT10N10
2500pcs/Reel
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
VDS
100
V
ID
7
A
IDM
21
A
Gate-Source Voltage
VGS
±20
V
Power Dissipation
PD
17
W
TJ, Tstg
-55 To 150
ºC
Symbol
Value
Unit
Thermal Resistance, Junction-to-Ambient
RthJA
50
ºC/W
Maximum Junction-to-Case
RthJC
7.4
ºC/W
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(note1)
Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter
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FAX:0755-29961466
GT10N10
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
Gate-Source Leakage
Value
Unit
Min.
Typ.
Max.
VGS = 0V, ID = 250µA
100
--
--
V
IDSS
VDS = 100V, VGS = 0V
--
--
1
μA
IGSS
VGS = ±20V
--
--
±100
nA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
1.5
2
2.5
V
Drain-Source On-Resistance
RDS(on)
VGS = 10V, ID = 3.5A
--
115
140
VGS = 4.5V, ID = 3.5A
--
150
175
Forward Transconductance
gFS
VGS = 15V, ID = 2A
3
--
--
--
206
--
--
28.9
--
--
1.4
--
--
4.3
--
--
1.5
--
--
1.1
--
--
14.7
--
--
3.5
--
--
20.9
--
--
2.7
--
Static Parameters
mΩ
S
Dynamic Parameters
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
VGS = 0V,
VDS = 50V,
f = 1.0MHz
VDD = 50V,
ID = 3.5A,
VGS = 10V
VDD = 50V,
ID = 3.5A,
RG = 2Ω
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
IS
TC = 25ºC
--
--
7
A
Body Diode Voltage
VSD
TJ = 25ºC, ISD = 3.5A, VGS = 0V
--
--
1.2
V
Reverse Recovery Charge
Qrr
--
52
--
nC
Reverse Recovery Time
Trr
IF = 3.5A, VGS = 0V
di/dt=500A/us
--
16
--
ns
Notes
1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
Identical low side and high side switch with identical RG
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466
GT10N10
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
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TEL:0755-29961263
FAX:0755-29961466
GT10N10
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 2. Transfer Characteristics
ID, Drain Current (A)
ID, Drain Current (A)
Figure 1. Output Characteristics
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 4. Gate Charge
RDS(on),On-Resistance(mΩ)
Vgs Gate-Source Voltage(V)
Figure 3. Drain Source On Resistance
ID-Drain Current(A)
VDD = 50V,
ID = 3.5A
Qg Gate Charge(nC)
Figure 6. Source-Drain Diode Forward
Capacitance(pF)
Is, Reverse Drain Current (A)
Figure 5. Capacitance
VDS Drain-Source Voltage(V)
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TEL:0755-29961263
VSD, Source-to-Drain Voltage (V)
FAX:0755-29961466
GT10N10
Typical Characteristics TJ = 25ºC, unless otherwise noted
VGS = 10V,
ID = 3.5A
VGS = 4.5V
ID = 3.5A
Figure 8. Safe Operation Area
ID, Drain Current(A)
RDS(on), (Normalized)
Figure 7. Drain-Source On-Resistance
TJ, Junction Temperature (ºC)
VDS, Drain-Source Voltage(V)
ZthJC, Thermal Impedance (ºC/W)
Figure 9. Normalized Maximum Transient
Thermal Impedance
7.4°C/W
Pulse Width (s)
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TEL:0755-29961263
FAX:0755-29961466
GT10N10
H
D
D1
L5
L3
TO-252 Package Information
E1
L4
A2
b
θ
L
A1
L2
A
e
(L1)
COMMON DIMENSIONS
SYMBOL
mm
MIN
NOM
MAX
2.20
2.30
2.40
0.00
-
0.20
A2
0.97
1.07
1.17
b
0.68
0.78
0.90
b3
5.20
5.33
5.50
c
0.43
0.53
0.63
D
5.98
6.10
6.22
A
A1
D1
5.30REF
E
6.40
6.60
E1
4.63
-
e
9.40
L
1.38
L1
L2
L4
L5
θ
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-
2.286BSC
H
L3
6.80
10.10
10.50
1.50
1.75
2.90REF
0.51BSC
0.88
-
1.28
0.50
-
1.00
1.65
1.80
1.95
-
8°
0°
TEL:0755-29961263
FAX:0755-29961466
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