100N03A

UMW R UMW 100N03A 30V N-Channel Power UMW 100N03A Mosfet General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =90A RDS(ON),3.8 mΩ(Typ) @ VGS =10V RDS(ON), 6.4mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances Application DC-DC converters Synchronous Rectifier Package Marking and Ordering Information Device Marking Device Device Package UMW 100N03A UMW 100N03A TO-252 Reel Size Tape width 330mm QuantitY 12mm 2500 Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V 90 A 63 A Drain Current-ContinuousNote3 TC=25℃ TC=100℃ ID Drain Current-Pulsed IDM 200 A Avalanche Energy EAS 280 mJ Avalanche Current IAS 33 A PD 105 W TSTG -55 to +150 ℃ TJ -55 to +150 ℃ Note1 Note4 Maximum Power Dissipation TC=25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Parameter Thermal Resistance,Junction-to-Case www.umw-ic.com Symbol Min. Typ. Max Unit RθJC - 3.3 - ℃/W 1 友台半导体有限公司 UMW R UMW 100N03A Electrical Characteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions VGS=0V,IDS=250uA Min. Typ. Max. Unit 30 - - V Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 uA Gate-Body Leakage IGSS VGS=±20V,VDS=0V - - ±100 nA ON CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Gate Threshold Voltage VGS(TH) VDS=VGS,IDS=250uA 1.0 1.7 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V,IDS=30A - 3.8 4.9 VGS=4.5V,IDS=20A - 6.4 7.9 Conditions Min. Typ. Max. - 1963 - - 248 - - 221 - - 1.43 - Ω Min. Typ. Max. Unit - 55 - - 36.4 - - 37.5 - - 14 - - 41 - - 6.4 - - 11 - mΩ DYNAMIC CHARACTERISTICS Parameter Symbol Input Capacitance CiSS Output Capacitance COSS Reverse Transfer Capacitance Crss Gate Resisitance Rg VDS =15V, VGS = 0V, f=1MHz VDD=0V,VGS=1V, F=1MHz Unit pF SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Rise Time Symbol Td(on) tr Turn-Off Delay Time Fall Time Conditions VGS=10V,VDs=15V, RGEN=3Ω Td(off) ID=20A tf Total Gate Charge at 10V Qg Gate to Source Gate Charge Qgs Gate to Drain“Miller”Charge Qgd VDS=15V,IDS=45A, VGS=10V ns nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit VSD VGS=0V,IDS=20A - - 1.2 V Reverse Recovery Time trr TJ=25℃,IF=20A - 21.7 - nS Reverse Recovery Charge Qrr di/dt=100A/us - 7.2 - nC Drain-Source Diode Forward Voltage Notes: 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤ 2%. 4: EAS condition: L=0.5mH,VDD=15V,VG=10V,VGATE=30V,Start TJ=25℃. www.umw-ic.com 2 友台半导体有限公司 UMW R www.umw-ic.com UMW 100N03A 3 友台半导体有限公司 UMW R www.umw-ic.com UMW 100N03A 4 友台半导体有限公司 UMW R www.umw-ic.com UMW 100N03A 5 友台半导体有限公司 UMW R www.umw-ic.com UMW 100N03A 6 友台半导体有限公司