G20P10KE

G20P10KE P-Channel Enhancement Mode Power MOSFET Description The G20P10KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) 100% Avalanche Tested -100V -20A < 116mΩ Schematic diagram l RoHS Compliant l ESD (HBM)>7.0KV Application l Power switch l DC/DC converters TO-252 Ordering Information Device Package Marking Packaging G20P10KE TO-252 G20P10 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -100 V ID -20 A IDM -80 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 69 W EAS 56 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 25 ºC/W Maximum Junction-to-Case RthJC 1.8 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1418-V1.3) G20P10KE Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -100 -- -- V IDSS VDS = -100V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±10 uA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.5 -3 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -16A -- 94 116 mΩ Forward Transconductance gFS VDS = -5V,ID = -16A -- 35 -- S -- 3354 -- -- 89 -- -- 87 -- -- 70 -- -- 12.5 -- -- 15.5 -- -- 16 -- -- 73 -- -- 34 -- -- 57 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -50V, f = 1.0MHz VDD = -50V, ID = -16A, VGS = -10V VDD = -50V, ID = -16A, RG = 9Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -20 A Body Diode Voltage VSD TJ = 25ºC, ISD = -16A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 66 -- nC Reverse Recovery Time Trr -- 88 -- ns IF = -16A, VGS = 0V di/dt=-500A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1418-V1.3) G20P10KE Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1418-V1.3) G20P10KE Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 18 -ID, Drain Current (A) 30 -10V 16 VDS= -5V -3.5V -4.5V -ID, Drain Current (A) 20 Figure 2. Transfer Characteristics -3V 14 12 10 8 -2.7V 6 4 VGS= -2.5V 2 0 0 1 2 3 25 20 15 5 0 4 25℃ 10 0 -VDS, Drain-to-Source Voltage (V) 140 120 100 VGS= -10V 60 0 10 20 30 2500 2000 1500 1000 Coss Crss 0 10 20 30 40 50 8 6 4 2 0 20 40 60 80 60 -VDS Drain-Source Voltage(V) www.gofordsemi.com VDD = -50V, ID = -16A -Is, Reverse Drain Current (A) Capacitance(pF) Ciss 3000 0 6 Figure 6. Source-Drain Diode Forward 4500 500 5 Qg Gate Charge（nC） Figure 5. Capacitance 3500 4 10 0 40 -ID-Drain Current (A) 4000 3 Figure 4. Gate Charge -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 160 40 2 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 80 1 TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1418-V1.3) G20P10KE Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance VGS = -10V, ID = -16A ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance 1.8°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1418-V1.3) G20P10KE TO-252 Package Mechanical Data Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 L5 θ www.gofordsemi.com MIN. 2.2 0 0.97 0.68 5.2 0.43 5.98 6.4 4.63 9.4 1.38 0.88 0.5 1.65 0° Dimensions in Millimeters NOM. 2.3 　 1.07 0.78 5.33 0.53 6.1 5.30REF 6.6 　 2.286BSC 10.1 1.5 2.90REF 0.51BSC 　 　 1.8 　 TEL：0755-29961263 MAX. 2.4 0.2 1.17 0.9 5.5 0.63 6.22 6.8 　 10.5 1.75 1.28 1 1.95 8° FAX:0755-29961466(A1418-V1.3)