G58N06K

G58N06K N-Channel Enhancement Mode Power MOSFET Description The G58N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS 60V ID (at VGS = 10V) 58A RDS(ON) (at VGS = 10V) < 13mΩ RDS(ON) (at VGS = 4.5V) < 15mΩ 100% Avalanche Tested Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Device Package Marking Packaging G58N06K TO-252 G58N06 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 60 V ID 58 A IDM 120 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 71 W EAS 81 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 1.76 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1455） G58N06K Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 60 -- -- V IDSS VDS = 60V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.7 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 30A -- 10.5 13 VGS = 4.5V, ID = 25A -- 12 15 Forward Transconductance gFS VDS = 5V,ID = 20A -- 35 -- -- 2841 -- -- 155 -- -- 139 -- -- 36 -- -- 10 -- -- 6.5 -- -- 12 -- -- 5 -- -- 38 -- -- 27 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 30V, f = 1.0MHz VDD = 30V, ID = 30A, VGS = 10V VDD = 30V, ID = 30A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 58 A Body Diode Voltage VSD TJ = 25ºC, ISD = 30A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 35 -- nC Reverse Recovery Time Trr IF = 30A, VGS = 0V di/dt=100A/us -- 47 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG 3. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1455） G58N06K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1455） G58N06K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 140 10V 120 4.5V 100 4.2V 80 3.8V 60 3.5V 40 20 0 100 1 80 25℃ 60 40 20 VGS=3.3V 0 VDS= 5V 120 ID, Drain Current (A) ID, Drain Current (A) 140 2 3 0 4 0 VDS, Drain-to-Source Voltage (V) 15 14 VGS= 4.5V 11 10 VGS= 10V 9 8 7 6 0 10 20 30 6 8 Figure 4. Gate Charge Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） 16 12 4 VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance 13 2 40 ID-Drain Current（A） 10 VDD = 30V ID = 30A 8 6 4 2 0 0 10 20 30 40 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Capacitance(pF) 3500 Is, Reverse Drain Current (A) 4000 Ciss 3000 2500 2000 1500 1000 Coss 500 0 Crss 0 10 20 30 40 50 60 VDs Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466（A1455） G58N06K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area VGS=10V ID=30A VGS=4.5V ID=25A ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ(Max)=150℃ TC=25℃ VDS, Drain-Source Voltage(V) TJ, Junction Temperature (ºC) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 1.76°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1455） G58N06K TO-252 Package Information Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 L5 θ www.gofordsemi.com MIN. 2.2 0 0.97 0.68 5.2 0.43 5.98 6.4 4.63 9.4 1.38 0.88 0.5 1.65 0° Dimensions in Millimeters NOM. 2.3 　 1.07 0.78 5.33 0.53 6.1 5.30REF 6.6 　 2.286BSC 10.1 1.5 2.90REF 0.51BSC 　 　 1.8 　 TEL：0755-29961263 MAX. 2.4 0.2 1.17 0.9 5.5 0.63 6.22 6.8 　 10.5 1.75 1.28 1 1.95 8° FAX:0755-29961466（A1455）