G2K8P15K

G2K8P15K P-Channel Enhancement Mode Power MOSFET Description The G2K8P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) 100% Avalanche Tested -150V -12A < 310mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Ordering Information Device Package Marking Packaging G2K8P15K TO-252 G2K8P15 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -150 V ID -12 A IDM -48 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 59 W EAS 42 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 2.1 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1610-V1.1） G2K8P15K Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -150 -- -- V IDSS VDS = -150V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -2.2 -3.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -2A -- 271 310 mΩ Forward Transconductance gFS VDS = -5V,ID = -2A -- 2.7 -- S -- 953 -- -- 39 -- -- 24 -- -- 11 -- -- 3.2 -- -- 1.9 -- -- 9.7 -- -- 2.5 -- -- 17 -- -- 5.7 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -75V, f = 1.0MHz VDD = -75V, ID = -2A, VGS = -10V VDD = -75V, ID = -2A, RG = 6Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -12 A Body Diode Voltage VSD TJ = 25ºC, ISD = -2A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 157 -- nC Reverse Recovery Time Trr -- 65 -- ns IF = -2A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1610-V1.1） G2K8P15K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1610-V1.1） G2K8P15K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 8 -10V -6V -5V 7 6 -4V -4.5V -ID, Drain Current (A) -ID, Drain Current (A) 8 Figure 2. Transfer Characteristics 5 4 VGS= -3.5V 3 2 1 0 VDS= -5V 7 6 5 4 25℃ 3 2 1 0 1 2 3 0 4 0 2 -VDS, Drain-to-Source Voltage (V) -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 320 300 VGS= -10V 260 240 220 0 0.5 1 1.5 10 8 6 4 2 0 2 VDD = -75V ID = -2A 0 2 -ID-Drain Current (A) -Is, Reverse Drain Current (A) Capacitance(pF) Ciss 1000 800 600 400 0 Coss Crss 0 6 8 10 12 Figure 6. Source-Drain Diode Forward 1400 200 4 Qg Gate Charge（nC） Figure 5. Capacitance 1200 8 Figure 4. Gate Charge 340 200 6 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 280 4 100 10 1 0.1 10 20 30 40 50 60 -VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 0.4 0.6 1.8 1.0 1.2 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466（A1610-V1.1） G2K8P15K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area Figure 7. Drain-Source On-Resistance VGS = -10V ID = -2A 2 -ID, Drain Current(A) RDS(on), (Normalized) 2.5 1.5 1 0.5 0 25 50 75 100 125 150 ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance 2.1°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1610-V1.1） G2K8P15K TO-252 Package Information Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 L5 θ www.gofordsemi.com MIN. 2.2 0 0.97 0.68 5.2 0.43 5.98 6.4 4.63 9.4 1.38 0.88 0.5 1.65 0° Dimensions in Millimeters NOM. 2.3 　 1.07 0.78 5.33 0.53 6.1 5.30REF 6.6 　 2.286BSC 10.1 1.5 2.90REF 0.51BSC 　 　 1.8 　 TEL：0755-29961263 MAX. 2.4 0.2 1.17 0.9 5.5 0.63 6.22 6.8 　 10.5 1.75 1.28 1 1.95 8° FAX:0755-29961466（A1610-V1.1）