GT090N06K

GT090N06K N-Channel Enhancement Mode Power MOSFET Description The GT090N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested < < 60V 45A 9mΩ 15mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Ordering Information Device Package Marking Packaging GT090N06K TO-252 GT090N06 2500psc/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 60 V ID 45 A IDM 140 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 52 W EAS 20 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 2.4 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1607-V1.1) GT090N06K Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 60 -- -- V IDSS VDS = 60V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.7 2.4 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 14A -- 7.5 9 VGS = 4.5V, ID = 10A -- 12 15 Forward Transconductance gFS VGS = 5V, ID = 14A -- 24 -- -- 1088 -- -- 284 -- -- 18 -- -- 22 -- -- 5 -- -- 4 -- -- 4 -- -- 2 -- -- 13 -- -- 2 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 30V, f = 1.0MHz VDD = 30V, ID = 14A, VGS = 10V VDD = 30V, ID = 14A, RG = 1.6Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 45 A Body Diode Voltage VSD TJ = 25ºC, ISD = 14A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 12 -- nC Reverse Recovery Time Trr IF = 14A, VGS = 0V di/dt=500A/us -- 18 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1607-V1.1) GT090N06K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1607-V1.1) GT090N06K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 120 6V 10V 100 ID, Drain Current (A) VDS= 5V 5V ID, Drain Current (A) 120 Figure 2. Transfer Characteristics 4.5V 80 60 4V 40 VGS= 3.5V 20 0 0 1 2 100 80 60 25℃ 40 20 3 0 4 0 Figure 3. Drain Source On Resistance RDS(on),On-Resistance（mΩ） 20 16 VGS= 4.5V 12 8 VGS= 10V 4 0 0 5 10 15 20 25 Ciss 1000 800 0 8 6 4 2 0 5 10 15 20 25 Is, Reverse Drain Current (A) Capacitance(pF) 1400 Coss 200 VDD = 30V ID = 14A Figure 6. Source-Drain Diode Forward 1600 400 8 Qg Gate Charge（nC） Figure 5. Capacitance 600 6 Figure 4. Gate Charge 10 0 30 ID-Drain Current（A） 1200 4 VGS, Gate-to-Source Voltage (V) Vgs Gate-Source Voltage（V） VDS, Drain-to-Source Voltage (V) 2 Crss 0 10 20 30 40 50 VDS Drain-Source Voltage(V) www.gofordsemi.com 60 TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1607-V1.1) GT090N06K Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V ID = 14A VGS = 4.5V ID = 10A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1607-V1.1) GT090N06K TO-252 Package Information H D D1 L5 L3 c E1 L4 A2 b θ L A1 L2 A e (L1) COMMON DIMENSIONS SYMBOL A A1 mm MIN NOM MAX 2.20 2.30 2.40 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 E1 4.63 e 6.60 - 6.80 - 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 L2 L3 L4 L5 θ www.gofordsemi.com 2.90REF 0.51BSC 0.88 - 1.28 0.50 - 1.00 1.65 1.80 1.95 - 8° 0° TEL：0755-29961263 FAX:0755-29961466(A1607-V1.1)