G450P04K

G450P04K P-Channel Enhancement Mode Power MOSFET Description The G450P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) RDS(ON) (at VGS = -4.5V) 100% Avalanche Tested -40V -11A < 40mΩ < 55mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Ordering Information Device Package Marking Packaging G450P04K TO-252 G450P04 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -40 V ID -11 A IDM -44 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 48 W EAS 12 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 2.6 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1734-V1.0) G450P04K Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -40 -- -- V IDSS VDS = -40V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.6 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -6A -- 32 40 VGS = -4.5V, ID = -6A -- 45 55 Forward Transconductance gFS VDS = -5V,ID = -6A -- 11 -- -- 983 -- -- 87 -- -- 80 -- -- 25 -- -- 3 -- -- 7 -- -- 8 -- -- 4 -- -- 32 -- -- 7 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -20V, f = 1.0MHz VDD = -20V, ID = -6A, VGS = -10V VDD = -20V, ID = -6A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -11 A Body Diode Voltage VSD TJ = 25ºC, ISD = -6A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 31 -- nC Reverse Recovery Time Trr -- 25 -- ns IF = -6A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-40V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1734-V1.0) G450P04K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1734-V1.0) G450P04K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics -10V -ID, Drain Current (A) 35 40 -4.5V -ID, Drain Current (A) 40 Figure 2. Transfer Characteristics -4V 30 25 -3.5V 20 15 -3V 10 VGS= -2.5V 5 0 0 1 2 VDS= -5V 35 30 25 20 25℃ 15 10 5 3 0 4 0 -VDS, Drain-to-Source Voltage (V) 2 -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 70 60 VGS= -4.5V VGS= -10V 30 20 10 0 0 2 4 6 8 8 Figure 4. Gate Charge 80 40 6 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 50 4 10 6 4 2 0 10 -ID-Drain Current (A) VDD = -20V, ID = -6A 8 0 5 10 15 20 25 30 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward -Is, Reverse Drain Current (A) 1400 Capacitance(pF) 1200 Ciss 1000 800 600 400 Coss 200 0 Crss 0 10 20 30 40 -VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1734-V1.0) G450P04K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area RDS(on), (Normalized) VGS = -10V, ID = -6A VGS = -4.5V, ID = -6A -ID, Drain Current(A) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance 2.6°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1734-V1.0) G450P04K TO-252 Package Information E c H D D1 L5 L3 b3 E1 L4 A2 b θ L A1 L2 A e (L1) COMMON DIMENSIONS SYMBOL A A1 mm MIN NOM MAX 2.20 2.30 2.40 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 E1 4.63 e 6.60 - 6.80 - 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 L2 L3 L4 L5 θ www.gofordsemi.com 2.90REF 0.51BSC 0.88 - 1.28 0.50 - 1.00 1.65 1.80 1.95 - 8° 0° TEL：0755-29961263 FAX:0755-29961466(A1734-V1.0)