G160N04K

G160N04K N-Channel Enhancement Mode Power MOSFET Description The G160N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested 40V 25A < 15mΩ < 19mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Ordering Information Device Package Marking Packaging G160N04K TO-252 G160N04 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 40 V ID 25 A IDM 100 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 43 W EAS 20 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 40 ºC/W Maximum Junction-to-Case RthJC 2.9 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1630-V1.2) G160N04K Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 40 -- -- V IDSS VDS =40V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.6 2 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 8A -- 12 15 VGS = 4.5V, ID = 6A -- 16 19 Forward Transconductance gFS VGS = 5V, ID = 8A -- 16 -- -- 1010 -- -- 82 -- -- 76 -- -- 20 -- -- 3.8 -- -- 3.1 -- -- 8 -- -- 3 -- -- 19 -- -- 2 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 20V, f = 1.0MHz VDD = 20V, ID = 8A, VGS = 10V VDD = 20V, ID = 8A, RG = 6Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 25 A Body Diode Voltage VSD TJ = 25ºC, ISD = 8A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 15 -- nC Reverse Recovery Time Trr IF = 8A, VGS = 0V di/dt=100A/us -- 28 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=40V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1630-V1.2) G160N04K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1630-V1.2) G160N04K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 60 60 10V ID, Drain Current (A) ID, Drain Current (A) VDS= 5V 4.5V 6V 5V 50 4V 40 30 VGS= 3.5V 20 10 0 0 1 2 3 30 25℃ 20 10 0 2 4 6 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance Figure 4. Gate Charge Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） 40 0 4 25 20 VGS= 4.5V 15 VGS= 10V 10 5 0 50 0 4 8 12 10 ID-Drain Current（A） VDD = 20V, ID = 8A 8 6 4 2 0 16 8 0 5 10 15 20 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) 1600 Capacitance(pF) 1400 1200 Ciss 1000 800 600 400 Coss 200 0 Crss 0 10 20 30 40 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1630-V1.2) G160N04K Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V, ID = 8A VGS = 4.5V, ID = 6A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 2.9°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1630-V1.2) G160N04K TO-252 Package Information E c H D D1 L5 L3 b3 E1 L4 A2 b θ L A1 L2 A e (L1) COMMON DIMENSIONS SYMBOL A A1 mm MIN NOM MAX 2.20 2.30 2.40 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 E1 4.63 e 6.60 - 6.80 - 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 L2 L3 L4 L5 θ www.gofordsemi.com 2.90REF 0.51BSC 0.88 - 1.28 0.50 - 1.00 1.65 1.80 1.95 - 8° 0° TEL：0755-29961263 FAX:0755-29961466(A1630-V1.2)