G160P03KI

G160P03KI P-Channel Enhancement Mode Power MOSFET Description The G160P03KI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) RDS(ON) (at VGS = -4.5V) 100% Avalanche Tested -30V -30A < 16mΩ < 23mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Ordering Information Device Package Marking Packaging G160P03KI TO-252 G160P03 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -30 V ID -30 A IDM -120 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 60 W EAS 42 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 40 ºC/W Maximum Junction-to-Case RthJC 2.5 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1634-V1.1） G160P03KI Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -30 -- -- V IDSS VDS = -30V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.5 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -10A -- 12 16 VGS = -4.5V, ID = -5A -- 17 23 Forward Transconductance gFS VDS = -5V,ID = -10A -- 17 -- -- 1811 -- -- 240 -- -- 208 -- -- 31.2 -- -- 3.2 -- -- 9.2 -- -- 10 -- -- 9 -- -- 50 -- -- 20 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -15V, f = 1.0MHz VDD = -15V, ID = -10A, VGS = -10V VDD = -15V, ID = -10A, RG = 2.5Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -30 A Body Diode Voltage VSD TJ = 25ºC, ISD = -10A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 16 -- nC Reverse Recovery Time Trr -- 24 -- ns IF = -10A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-30V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1634-V1.1） G160P03KI Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1634-V1.1） G160P03KI Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics VDS= -5V -3.5V -3.2V -4.5V 25 -ID, Drain Current (A) 30 -10V -ID, Drain Current (A) 30 Figure 2. Transfer Characteristics 20 -2.8V 15 10 VGS= -2.2V 5 0 0 1 2 3 25 20 15 25℃ 10 5 0 4 0 -VDS, Drain-to-Source Voltage (V) -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 25 VGS= -4.5V 15 VGS= -10V 5 0 0 5 10 15 Capacitance(pF) 1500 1000 Coss Crss 5 10 15 20 25 8 6 4 2 0 10 20 30 40 30 -VDS Drain-Source Voltage(V) www.gofordsemi.com VDD = -15V ID = -10A -Is, Reverse Drain Current (A) Ciss 0 6 Figure 6. Source-Drain Diode Forward 2500 0 5 Qg Gate Charge（nC） Figure 5. Capacitance 500 4 10 0 20 -ID-Drain Current (A) 2000 3 Figure 4. Gate Charge 30 10 2 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 20 1 TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466（A1634-V1.1） G160P03KI Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area VGS = -10V, ID = -10A VGS = -4.5V, ID = -5A -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1634-V1.1） G160P03KI TO-252 Package Information E c H D D1 L5 L3 b3 E1 L4 A2 b θ L A1 L2 A e (L1) COMMON DIMENSIONS SYMBOL mm MIN NOM MAX 2.30 2.40 A 2.20 A1 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 E1 4.63 e 6.60 - 6.80 - 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 L2 2.90REF 0.51BSC L3 0.88 - 1.28 L4 0.50 - 1.00 L5 1.65 1.80 1.95 - 8° θ www.gofordsemi.com 0° TEL：0755-29961263 FAX:0755-29961466（A1634-V1.1）