TSM051N04LCP ROG

TSM051N04LCP Taiwan Semiconductor N-Channel Power MOSFET 40V, 96A, 5.1mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VDS 40 V RDS(on) (max) VGS = 10V 5.1 VGS = 4.5V 7 mΩ Qg 22.6 nC APPLICATIONS ● ● ● ● BLDC Motor Control Battery Power Management DC-DC converter Secondary Synchronous Rectification TO-252 (DPAK) Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25°C (Note 1) ID TA = 25°C Pulsed Drain Current (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 96 16 A IDM 384 A IAS EAS 25 94 A mJ PD PD 89 18 2.6 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1.4 °C/W Junction to Ambient Thermal Resistance RӨJA 49 °C/W THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: A1701 TSM051N04LCP Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 40 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.2 1.7 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 4.3 5.1 -- 6 7 gfs -- 38 -- Qg -- 44.5 -- Qg -- 22.6 -- Qgs -- 6.7 -- Qgd -- 11 -- Ciss -- 2456 -- Coss -- 250 -- Crss -- 139 -- Rg 0.3 1.05 2.1 td(on) -- 6 -- tr -- 16 -- td(off) -- 23 -- tf -- 11 -- VSD -- -- 1 V VGS = 0V, VDS = 40V Drain-Source Leakage Current IDSS VGS = 0V, VDS = 40V TJ = 125°C Drain-Source On-State Resistance VGS = 10V, ID = 16A (Note 3) VGS = 4.5V, ID = 14A Forward Transconductance Dynamic (Note 3) RDS(on) VDS = 5V, ID = 16A µA mΩ S (Note 4) VGS = 10V, VDS = 20V, Total Gate Charge ID = 16A Total Gate Charge VGS = 4.5V, VDS = 20V, Gate-Source Charge ID = 14A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 20V Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz nC pF Ω (Note 4) Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 20V, Turn-Off Delay Time ID = 16A, RG = 2Ω, Turn-Off Fall Time ns Source-Drain Diode Forward Voltage (Note 3) VGS = 0V, IS = 16A Reverse Recovery Time IS = 16A , trr -- 19 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 11 -- nC Notes: 1. 2. 3. 4. Silicon limited current only. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 25A, Starting TJ = 25°C Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. TSM051N04LCP ROG PACKAGE PACKING TO-252 (DPAK) 2,500pcs / 13” Reel 2 Version: A1701 TSM051N04LCP Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 40 VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 32 24 ID, Drain Current (A) ID, Drain Current (A) 40 VGS=3V 16 8 32 24 25℃ 16 8 VGS=2.5V 150℃ 0 0 0 1 2 3 4 0 1 On-Resistance vs. Drain Current 3 4 Gate-Source Voltage vs. Gate Charge 0.01 10 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) 2 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 0.008 VGS=4.5V 0.006 0.004 VGS=10V 0.002 0 0 8 16 24 32 VDS=20V ID=16A 8 6 4 2 0 40 0 10 On-Resistance vs. Junction Temperature RDS(on), Drain-Source On-Resistance (Ω) VGS=10V ID=16A 1.6 1.4 1.2 1 0.8 0.6 -75 -50 -25 0 25 50 75 30 40 50 On-Resistance vs. Gate-Source Voltage 2 1.8 20 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) -55℃ 100 125 150 TJ, Junction Temperature (°C) 0.02 0.015 0.01 0.005 ID=16A 0 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) 3 Version: A1701 TSM051N04LCP Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage C, Capacitance (pF) 3500 3000 CISS 2500 2000 1500 1000 500 COSS CRSS 0 0 8 16 24 32 1.2 ID=1mA 1.1 1 0.9 0.8 40 -75 VDS, Drain to Source Voltage (V) -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 100 IS, Reverse Drain Current (A) 1000 RDS(ON) ID, Drain Current (A) -50 100 10 SINGLE PULSE RӨJC=1.4°C/W TC=25°C 1 10 150℃ 25℃ -55℃ 1 0.1 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=1.4°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.01 0.1 t, Square Wave Pulse Duration (sec) 4 Version: A1701 TSM051N04LCP Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-252 (DPAK) SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM 051N04L YML Y = Year Code M = Month Code O =Jan P =Feb S =May T =Jun W =Sep X =Oct L = Lot Code (1~9, A~Z) Q =Mar U =Jul Y =Nov 5 R =Apr V =Aug Z =Dec Version: A1701 TSM051N04LCP Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A1701