TSM60NC1R5CP
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 3A, 1.5Ω
FEATURES
KEY PERFORMANCE PARAMETERS
● Super-Junction technology
PARAMETER
VALUE
UNIT
VDS
600
V
RDS(on) (max)
1.5
Ω
Qg
8
nC
● High performance due to small figure-of-merit
● High ruggedness performance
● High commutation performance
● 100% UIS & Rg tested
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Power Supply
● Lighting
TO-252
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±20
V
3
A
2
A
IDM
9
A
Continuous Drain Current
Pulsed Drain Current
TC = 25°C
(Note 1)
ID
TC = 100°C
(Note 2)
Total Power Dissipation @ TC = 25°C
PD
55
W
Single Pulse Avalanche Energy
(Note 3)
EAS
100
mJ
Single Pulse Avalanche Current
(Note 3)
IAS
2
A
TJ, TSTG
- 55 to +150
°C
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
2.2
°C/W
Junction to Ambient Thermal Resistance
RӨJA
52
°C/W
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
1
Version: C2209
TSM60NC1R5CP
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Static
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
(Note 4)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mA
BVDSS
600
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 1mA
VGS(TH)
3.5
4.2
5.5
V
Gate Body Leakage
VGS = ± 20V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
100
µA
Drain-Source On-State Resistance
VGS = 10V, ID = 1A
RDS(on)
--
1.3
1.5
Ω
Qg
--
8.1
--
Qgs
--
2.5
--
Qgd
--
3.4
--
Ciss
--
235
--
Coss
--
16
--
Crss
--
10
--
Rg
0.84
2.8
5.6
td(on)
--
18
--
tr
--
17
--
td(off)
--
33
--
tf
--
40
--
Body-Diode Continuous Forward Current
IS
--
--
3
A
Body-Diode Pulsed Current
ISM
--
--
9
A
VSD
--
--
1.5
V
Dynamic
(Note 5)
Total Gate Charge
VDS = 300V, ID = 3A,
Gate-Source Charge
VGS = 10V
Gate-Drain Charge
Input Capacitance
VDS = 300V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
Switching
f = 1.0MHz
nC
pF
Ω
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
VDD = 300V, RG = 10Ω,
Turn-Off Delay Time
ID = 1.5A, VGS = 10V
Turn-Off Fall Time
Source-Drain Diode
ns
(Note 4)
Forward Voltage
IS = 3A, VGS = 0V
Reverse Recovery Time
VDD = 300V, IS = 3A
trr
--
250
--
ns
Reverse Recovery Charge
dIF/dt = 100A/μs
Qrr
--
1.9
--
μC
Notes:
1.
Current limited by package.
2.
Pulse width limited by the maximum junction temperature.
3.
L = 50mH, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
4.
Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.
5.
For DESIGN AID ONLY, not subject to production testing.
6.
Switching time is essentially independent of operating temperature.
o
ORDERING INFORMATION
ORDERING CODE
PACKAGE
PACKING
TSM60NC1R5CP ROG
TO-252 (DPAK)
2500pcs / 13”Reel
2
Version: C2209
TSM60NC1R5CP
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
3
3
VGS= 10V
ID, Drain Current (A)
ID, Drain Current (A)
2.5
VGS= 8V
2
VGS= 7V
1.5
VGS= 6.5V
VGS= 6V
1
0.5
2.5
2
1.5
150°C
1
25°C
0
0
1
2
3
4
0
5
0
2
4
6
8
10
VGS, Gate to Source Voltage (V)
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
10
2.5
VGS, Gate to Source Voltage (V)
RDS(on), Drain-Source On-Resistance (Ω)
VDS, Drain to Source Voltage (V)
2
1.5
1
0.5
VGS=10V
8
6
4
VDS=300V
ID=3A
2
0
0
0
0.5
1
1.5
2
2.5
0
3
2
ID, Drain Current (A)
RDS(on), Drain-Source On-Resistance (Ω)
2.5
2
1.5
1
VGS=10V
ID=1A
0.5
0
-50
-25
0
25
50
75
6
8
10
On-Resistance vs. Gate-Source Voltage
3
-75
4
Qg, Gate Charge (nC)
On-Resistance vs. Junction Temperature
RDS(on), Drain-Source On-Resistance
(Normalized)
-55°C
0.5
100 125 150 175
TJ, Junction Temperature (°C)
2.5
2
1.5
1
0.5
ID=1A
0
5
6
7
8
9
10
VGS, Gate to Source Voltage (V)
3
Version: C2209
TSM60NC1R5CP
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
1000
Ciss
100
Coss
10
VGS = 0V
f = 1MHz
Crss
1
0
100
200
300
400
500
1.2
BVDSS (Normalized)
Drain-Source Breakdown Voltage
C, Capacitance (pF)
10000
1.1
1
0.9
ID=1mA
0.8
-75
600
VDS, Drain to Source Voltage (V)
-25
0
25
50
75
100 125 150 175
TJ, Junction Temperature (°C)
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
100
IS, Reverse Drain Current (A)
10
10
ID, Drain Current (A)
-50
RDS(ON)
1
0.1
SINGLE PULSE
RӨJC=2.2°C/W
TC=25°C
0.01
1
150°C
-55°C
0.1
25°C
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
VSD, Body Diode Forward Voltage (V)
VDS, Drain to Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance, ZӨJC
10
SINGLE PULSE
RӨJC=2.2°C/W
1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.1
0.01
0.0001
0.001
0.01
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
0.1
1
t, Square Wave Pulse Duration (sec)
4
Version: C2209
TSM60NC1R5CP
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-252
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
60NC1R5
YWWLF
Y
WW
L
F
= Year Code
= Week Code (01~52)
= Lot Code (1~9,A~Z)
= Factory Code
5
Version: C2209
TSM60NC1R5CP
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular
purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: C2209
