G75P04K

G75P04K P-Channel Enhancement Mode Power MOSFET Description The G75P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) RDS(ON) (at VGS = -4.5V) 100% Avalanche Tested -40V -80A < 6.5mΩ < 8.5mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Ordering Information Device Package Marking Packaging G75P04K TO-252 G75P04 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -40 V ID -80 A IDM -320 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 115 W EAS 306 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 55 ºC/W Maximum Junction-to-Case RthJC 1.08 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1689-V1.2) G75P04K Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -40 -- -- V IDSS VDS = -40V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.0 -1.5 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -20A -- 5.0 6.5 VGS = -4.5V, ID = -20A -- 6.7 8.5 Forward Transconductance gFS VDS = -5V,ID = -20A -- 44 -- -- 7039 -- -- 714 -- -- 675 -- -- 106 -- -- 22 -- -- 27 -- -- 15 -- -- 12 -- -- 70 -- -- 18 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -20V, f = 1.0MHz VDD = -20V, ID = -20A, VGS = -10V VDD = -20V, ID = -20A, RG = 1Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -80 A Body Diode Voltage VSD TJ = 25ºC, ISD = -20A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 50 -- nC Reverse Recovery Time Trr -- 53 -- ns IF = -20A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-40V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1689-V1.2) G75P04K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1689-V1.2) G75P04K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 120 -10V VDS = -5V -4V -4.5V 100 -ID, Drain Current (A) -ID, Drain Current (A) 120 Figure 2. Transfer Characteristics -3.5V 80 60 -3V 40 20 100 80 60 40 25℃ 20 VGS = -2.5V 0 0 1 2 3 0 4 0 -VDS, Drain-to-Source Voltage (V) 2 -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 10 VGS = -4.5V 6 VGS = -10V 2 0 0 10 20 30 8 Figure 4. Gate Charge 12 4 6 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 8 4 10 8 6 4 2 0 40 -ID-Drain Current (A) VDD = -20V, ID = -20A 0 20 40 60 80 100 120 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Capacitance(pF) 8000 -Is, Reverse Drain Current (A) 9000 Ciss 7000 6000 5000 4000 3000 2000 Coss 1000 0 Crss 0 10 20 30 40 -VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1689-V1.2) G75P04K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area VGS = -10V, ID = -20A -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1689-V1.2) G75P04K TO-252 Package Information E c H D D1 L5 L3 b3 E1 L4 A2 b θ L A1 L2 A e (L1) COMMON DIMENSIONS SYMBOL A A1 mm MIN NOM MAX 2.20 2.30 2.40 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 E1 4.63 e 6.60 - 6.80 - 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 L2 L3 L4 L5 θ www.gofordsemi.com 2.90REF 0.51BSC 0.88 - 1.28 0.50 - 1.00 1.65 1.80 1.95 - 8° 0° TEL：0755-29961263 FAX:0755-29961466(A1689-V1.2)