G20P08K

GOFORD G20P08K P-Channel Enhancement Mode Power MOSFET Description The G20P08K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ ⚫ ⚫ ⚫ ⚫ VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) RDS(ON) (at VGS = -4.5V) 100% Avalanche Tested -80V -20A < 62mΩ < 70mΩ Schematic diagram ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters TO-252 Device Package Marking Packaging G20P08K TO-252 G20P08 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -80 V ID -20 A IDM -80 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 60 W TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJC 2.1 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Case www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1355) GOFORD G20P08K Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -80 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -80V, VGS = 0V -- -- -1 uA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.7 -2.5 V VGS = -10V, ID = - 10A -- 52 62 Drain-Source On-Resistance RDS(on) VGS = -4.5V, ID = - 10A -- 58 70 VDS=10V,ID=-10A -- 25 -- -- 3500 -- -- 410 -- -- 285 -- -- 48 -- -- 10.5 -- Forward Transconductance mΩ gFS S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = -30V, f = 1.0MHz VDD = -30V, ID = -10A, VGS = -10V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 11 -- Turn-on Delay Time td(on) -- 13 -- Turn-on Rise Time tr -- 16 -- Turn-off Delay Time td(off) -- 40 -- -- 16 -- Turn-off Fall Time VDD = -30V, ID = -10A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -20 A Body Diode Voltage VSD TJ = 25ºC, ISD = -10A, VGS = 0V -- -- -1.2 V Reverse Recovery Time Trr IS = -10A, VGS = 0V di/dt=-100A/us -- 47 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical R G www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1355) GOFORD G20P08K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1355) GOFORD G20P08K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics - ID, Drain Current (A) -ID, Drain Current (A) Figure 1. Output Characteristics -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 4. Drain Source On Resistance RDS(on),On-Resistance（mΩ） Figure 3. Gate Charge -Vgs Gate-Source Voltage（V） VGS=-10V ID=-10A VDS=-30V ID=-10A Qg Gate Charge（nC） VGS=-4.5V VGS=-10V -ID-Drain Current（A） Figure 6. Source-Drain Diode Forward Capacitance(pF) -Is, Reverse Drain Current (A) Figure 5. Capacitance -Vds Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 (A1355) GOFORD G20P08K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area VGS=-10V ID=-10A -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1355) GOFORD G20P08K TO-252 Package Information Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 L5 θ www.gofordsemi.com Dimensions in Millimeters MIN. NOM. MAX. 2.2 2.3 2.4 0 0.2 0.97 1.07 1.17 0.68 0.78 0.9 5.2 5.33 5.5 0.43 0.53 0.63 5.98 6.1 6.22 5.30REF 6.4 6.6 6.8 4.63 2.286BSC 9.4 10.1 10.5 1.38 1.5 1.75 2.90REF 0.51BSC 0.88 1.28 0.5 1 1.65 1.8 1.95 0° 8° TEL：0755-29961263 FAX:0755-29961466 (A1355)