5N20A

5N20A N-Channel Enhancement Mode Power MOSFET Description The 5N20A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) Fast switching 100% Avalanche Tested < 200V 5A 580mΩ Schematic diagram l Improved dv/dt capability l RoHS Compliant Application l DC Motor Control and Class D Amplifier l Uninterruptible Power Supply (UPS) l Automotive TO-252 Ordering Information Device Package Marking Packaging 5N20A TO-252 5N20A 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 200 V ID 5 A IDM 20 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 78 W EAS 25 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 1.6 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0376-V1.1) 5N20A Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 200 -- -- V IDSS VDS = 200V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 2.0 3.0 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 1A -- 420 580 mΩ Forward Transconductance gFS VGS = 5V, ID = 1A -- 8 -- S -- 247 -- -- 21 -- -- 7 -- -- 11 -- -- 2 -- -- 3 -- -- 7 -- -- 11 -- -- 18 -- -- 12 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 100V, f = 1.0MHz VDD = 100V, ID = 1A, VGS = 10V VDD = 100V, ID = 1A, RG = 10Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 5 A Body Diode Voltage VSD TJ = 25ºC, ISD = 1A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 357 -- nC Reverse Recovery Time Trr IF = 1A, VGS = 0V di/dt=100A/us -- 126 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0376-V1.1) 5N20A Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0376-V1.1) 5N20A Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 3.5 3V 3 2.7V 2.5 2 2.5V 1.5 1 VGS = 2.2V 0.5 0 0 1 2 3 RDS(on),On-Resistance（mΩ） 3 2.5 2 25℃ 1.5 1 0 4 0 1 2 3 4 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance Figure 4. Gate Charge 600 550 VGS = 4.5V 500 450 400 VGS = 10V 350 300 VDS = 5V 3.5 0.5 Vgs Gate-Source Voltage（V） ID, Drain Current (A) 4 10V 4.5V ID, Drain Current (A) 4 Figure 2. Transfer Characteristics 0 1 2 3 4 10 ID-Drain Current（A） VDD = 100V, ID = 1A 8 6 4 2 0 5 5 0 2 4 6 8 10 12 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) 700 Capacitance(pF) 600 500 400 Ciss 300 200 Coss 100 0 Crss 0 20 40 60 80 100 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A0376-V1.1) 5N20A Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area VGS = 10V, ID = 1A ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0376-V1.1) 5N20A TO-252 Package Information E c H D D1 L5 L3 b3 E1 L4 A2 b θ L A1 L2 A e (L1) COMMON DIMENSIONS SYMBOL A A1 mm MIN NOM MAX 2.20 2.30 2.40 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 E1 4.63 e 6.60 - 6.80 - 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 L2 L3 L4 L5 θ www.gofordsemi.com 2.90REF 0.51BSC 0.88 - 1.28 0.50 - 1.00 1.65 1.80 1.95 - 8° 0° TEL：0755-29961263 FAX:0755-29961466(A0376-V1.1)