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G20N03K

G20N03K

  • 厂商:

    GOFORD(谷峰)

  • 封装:

    TO-252(DPAK)

  • 描述:

    表面贴装型 N 通道 30 V 30A(Tc) 33W(Tc) TO-252

  • 数据手册
  • 价格&库存
G20N03K 数据手册
GOFORD G20N03K N-Channel Enhancement Mode Power MOSFET Description The G20N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ ⚫ ⚫ ⚫ ⚫ VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested 30V 30A < 20mΩ < 24mΩ Schematic diagram ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters TO-252 Device Package Marking Packaging G20N03K TO-252 G20N03 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 30 V ID 30 A IDM 80 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 33 W EAS 31 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJC 3.8 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) (note3) Single pulse avalanche energy Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Case www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1475) GOFORD G20N03K Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.5 2.5 V VGS = 10V, ID = 10A -- 12 20 Drain-Source On-Resistance RDS(on) VGS = 4.5V, ID = 8A -- 17 24 VDS=5V,ID=10A 26 -- -- -- 923 -- -- 100 -- -- 94 -- -- 18 -- -- 3 -- Forward Transconductance mΩ gFS S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = 15V, f = 1.0MHz VDD = 15V, ID = 10A, VGS = 10V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 4 -- Turn-on Delay Time td(on) -- 5 -- Turn-on Rise Time tr -- 12 -- Turn-off Delay Time td(off) -- 19 -- -- 6 -- Turn-off Fall Time VDD = 15V, ID = 10A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 30 A Body Diode Voltage VSD TJ = 25ºC, ISD = 10A, VGS = 0V -- -- 1.2 V Reverse Recovery Time Trr -- 19 -- ns Reverse Recovery Charge Qrr IS = 10A, VGS = 0V di/dt=100A/us -- 10 -- nC Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical R G 3. EAS condition : Tj=25℃ ,VDD=30V,VGS=10V,L=0.5mH,Rg=25Ω www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1475) GOFORD G20N03K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1475) GOFORD G20N03K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics ID, Drain Current (A) ID, Drain Current (A) Figure 1. Output Characteristics VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 4. Drain Source On Resistance RDS(on),On-Resistance(mΩ) Vgs Gate-Source Voltage(V) Figure 3. Gate Charge VDS=15V ID=10A Qg Gate Charge(nC) Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) Ciss Capacitance(pF) VGS=10V ID-Drain Current(A) Figure 5. Capacitance Coss Crss Vds Drain-Source Voltage(V) www.gofordsemi.com VGS=4.5V TEL:0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 (A1475) GOFORD G20N03K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area VGS=10V ID=10A ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance VDS, Drain-Source Voltage(V) TJ, Junction Temperature (ºC) ZthJC, Thermal Impedance (ºC/W) TJ(Max)=150℃ TC=25℃ Figure 9. Normalized Maximum Transient Thermal Impedance D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC Pulse Width (s) www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1475) GOFORD G20N03K TO-252 Package Information Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 L5 θ www.gofordsemi.com Dimensions in Millimeters MIN. NOM. MAX. 2.2 2.3 2.4 0 0.2 0.97 1.07 1.17 0.68 0.78 0.9 5.2 5.33 5.5 0.43 0.53 0.63 5.98 6.1 6.22 5.30REF 6.4 6.6 6.8 4.63 2.286BSC 9.4 10.1 10.5 1.38 1.5 1.75 2.90REF 0.51BSC 0.88 1.28 0.5 1 1.65 1.8 1.95 0° 8° TEL:0755-29961263 FAX:0755-29961466 (A1475)
G20N03K 价格&库存

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G20N03K
  •  国内价格
  • 10+0.37206
  • 100+0.29430
  • 300+0.25542
  • 2500+0.21330
  • 5000+0.18998
  • 10000+0.17820

库存:2247