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G35N02K

G35N02K

  • 厂商:

    GOFORD(谷峰)

  • 封装:

    TO-252(DPAK)

  • 描述:

    表面贴装型 N 通道 20 V 35A(Tc) 40W(Tc) TO-252

  • 数据手册
  • 价格&库存
G35N02K 数据手册
G35N02K N-Channel Enhancement Mode Power MOSFET Description The G35N02K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ ⚫ ⚫ ⚫ VDS ID (at VGS = 10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 20V 35A < 13mΩ < 18mΩ Schematic diagram ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters TO-252 Device G35N02K Marking Package TO-252 G35N02 Packaging 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 20 V ID 35 A IDM 100 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 40 W EAS 23 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJC 3.8 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) (note3) Single pulse avalanche energy Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Case www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1522) G35N02K Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.5 0.75 1.2 V VGS = 4.5V, ID = 20A -- 7 13 Drain-Source On-Resistance RDS(on) VGS = 2.5V, ID = 20A -- 9 18 VDS = 5V,ID = 20A -- 60 -- -- 1380 -- -- 212 -- -- 195 -- -- 24 -- -- 3 -- Forward Transconductance mΩ gFS S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VDS=10V, VGS=0V, F=1.0MHz VDS=10V, ID=20A, VGS=4.5V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 6 -- Turn-on Delay Time td(on) -- 4.5 -- Turn-on Rise Time tr -- 9 -- Turn-off Delay Time td(off) -- 19 -- -- 3 -- Turn-off Fall Time VDS = 10V, ID = 20A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 35 A Body Diode Voltage VSD TJ = 25ºC, ISD = 25A, VGS = 0V -- -- 1.2 V Reverse Recovery Time Trr -- 18 -- nS Reverse Recovery Charge Qrr -- 10 -- nC IS = 20A, VGS = 0V di/dt=100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical R G 3. EAS condition : Tj=25℃ ,VDD=20V,VGS=10V,L=0.5mH,Rg=25Ω www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1522) G35N02K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1522) G35N02K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics ID, Drain Current (A) ID, Drain Current (A) Figure 1. Output Characteristics VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 4. Drain Source On Resistance RDS(on),On-Resistance(mΩ) Vgs Gate-Source Voltage(V) Figure 3. Gate Charge VDS=10V ID=20A Qg Gate Charge(nC) VGS=4.5V ID-Drain Current(A) Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) Figure 5. Capacitance Capacitance(pF) VGS=2.5V Ciss Coss Crss Vds Drain-Source Voltage(V) www.gofordsemi.com TEL:0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 (A1522) G35N02K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area Figure 7. Drain-Source On-Resistance ID, Drain Current(A) RDS(on), (Normalized) VGS=4.5V,ID=20A TJ, Junction Temperature (ºC) TJ(MAX)=150℃,TC=25 ℃ VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1522) G35N02K TO-252 Package Information Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 L5 θ www.gofordsemi.com Dimensions in Millimeters MIN. NOM. MAX. 2.2 2.3 2.4 0 0.2 0.97 1.07 1.17 0.68 0.78 0.9 5.2 5.33 5.5 0.43 0.53 0.63 5.98 6.1 6.22 5.30REF 6.4 6.6 6.8 4.63 2.286BSC 9.4 10.1 10.5 1.38 1.5 1.75 2.90REF 0.51BSC 0.88 1.28 0.5 1 1.65 1.8 1.95 0° 8° TEL:0755-29961263 FAX:0755-29961466 (A1522)
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