G12P04K

G12P04K P-Channel Enhancement Mode Power MOSFET Description The G12P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) RDS(ON) (at VGS = -4.5V) 100% Avalanche Tested -40V -12A < 35mΩ < 45mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Ordering Information Device Package Marking Packaging G12P04K TO-252 G12P04 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -40 V ID -12 A IDM -48 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 50 W TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 2.5 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1414-V1.1) G12P04K Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -40 -- -- V IDSS VDS = -40V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.4 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -6A -- 29 35 VGS = -4.5V, ID = -5A -- 35 45 Forward Transconductance gFS VDS = -5V,ID = -6A -- 10 -- -- 1163 -- -- 100 -- -- 98 -- -- 25 -- -- 3 -- -- 7 -- -- 8 -- -- 4 -- -- 32 -- -- 7 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -20V, f = 1.0MHz VDD = -20V, ID = -6A, VGS = -10V VDD = -20V, ID = -6A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -12 A Body Diode Voltage VSD TJ = 25ºC, ISD = -6A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 25 -- nC Reverse Recovery Time Trr -- 31 -- ns IF = -6A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1414-V1.1) G12P04K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1414-V1.1) G12P04K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 35 -ID, Drain Current (A) 40 -10V -4.5V -ID, Drain Current (A) 40 Figure 2. Transfer Characteristics -3.5V 30 -3V 25 20 15 10 -2.5V 5 VGS=-2.2V 0 0 1 2 VDS= -5V 35 30 25 20 25℃ 15 10 5 3 0 4 0 -VDS, Drain-to-Source Voltage (V) 2 -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 50 VGS= -4.5V 30 VGS= -10V 10 0 0 2 4 6 8 10 8 Figure 4. Gate Charge 60 20 6 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 40 4 10 8 6 4 2 0 12 -ID-Drain Current (A) VDD = -20V, ID = -6A 0 5 10 15 20 25 30 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward -Is, Reverse Drain Current (A) 1800 Capacitance(pF) 1600 1400 Ciss 1200 1000 800 600 400 Coss 200 0 Crss 0 10 20 30 40 -VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1414-V1.1) G12P04K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area Figure 7. Drain-Source On-Resistance 1.6 -ID, Drain Current(A) RDS(on), (Normalized) 1.8 VGS = -10V, ID = -6A 1.4 1.2 VGS = -4.5V, ID = -5A 1 0.8 TJ(MAX)=150℃ TC=25℃ 0 25 50 75 100 125 150 175 ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance 2.5°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1414-V1.1) G12P04K TO-252 Package Information E c H D D1 L5 L3 b3 E1 L4 A2 b θ L A1 L2 A e (L1) COMMON DIMENSIONS SYMBOL mm MIN NOM MAX 2.30 2.40 A 2.20 A1 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 E1 4.63 e 6.60 - 6.80 - 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 L2 2.90REF 0.51BSC L3 0.88 - 1.28 L4 0.50 - 1.00 L5 1.65 1.80 1.95 - 8° θ www.gofordsemi.com 0° TEL：0755-29961263 FAX:0755-29961466(A1414-V1.1)