GT105N10K

GT105N10K N-Channel Enhancement Mode Power MOSFET Description The GT105N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) 100% Avalanche Tested 100V 60A < 10.5mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-252 Ordering Information Device Package Marking Packaging GT105N10K TO-252 GT105N10 2500psc/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 100 V ID 60 A IDM 240 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 83 W EAS 72 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 42 ºC/W Maximum Junction-to-Case RthJC 1.5 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1547) GT105N10K Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 100 -- -- V IDSS VDS = 100V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 2.9 4 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 35A -- 8.5 10.5 mΩ Forward Transconductance gFS VGS = 5V, ID = 35A -- 52 -- S -- 1574 -- -- 644 -- -- 7 -- -- 16 -- -- 5 -- -- 3 -- -- 7.5 -- -- 2.5 -- -- 16.4 -- -- 3 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 50V, f = 1.0MHz VDD = 50V, ID = 35A, VGS = 10V VDD = 50V, ID = 35A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 60 A Body Diode Voltage VSD TJ = 25ºC, ISD = 35A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 132 -- nC Reverse Recovery Time Trr IF = 35A, VGS = 0V di/dt=500A/us -- 30 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1547) GT105N10K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1547) GT105N10K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 120 10V ID, Drain Current (A) VDS= 5V 8V 100 ID, Drain Current (A) 120 Figure 2. Transfer Characteristics 6V 80 60 5V 40 4.5V 20 0 1 2 80 60 25℃ 40 20 VGS=4V 0 100 3 0 4 0 Figure 3. Drain Source On Resistance RDS(on),On-Resistance（mΩ） 12 11 10 9 VGS= 10V 8 7 6 0 10 20 30 4 6 8 10 VGS, Gate-to-Source Voltage (V) Vgs Gate-Source Voltage（V） VDS, Drain-to-Source Voltage (V) 2 Figure 4. Gate Charge 10 6 4 2 0 40 ID-Drain Current（A） VDD = 50V ID =35A 8 0 5 10 15 20 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Capacitance(pF) 2000 Is, Reverse Drain Current (A) 2500 Ciss 1500 1000 500 Coss 0 Crss 0 10 20 30 40 50 60 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1547) GT105N10K Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V, ID = 35A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 1.5°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1547) GT105N10K TO-252 Package Information Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 L5 θ www.gofordsemi.com MIN. 2.2 0 0.97 0.68 5.2 0.43 5.98 6.4 4.63 9.4 1.38 0.88 0.5 1.65 0° Dimensions in Millimeters NOM. 2.3 　 1.07 0.78 5.33 0.53 6.1 5.30REF 6.6 　 2.286BSC 10.1 1.5 2.90REF 0.51BSC 　 　 1.8 　 TEL：0755-29961263 MAX. 2.4 0.2 1.17 0.9 5.5 0.63 6.22 6.8 　 10.5 1.75 1.28 1 1.95 8° FAX:0755-29961466(A1547)